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    Display driver integrated circuit (DDI) chip and display apparatus
    1.
    发明授权
    Display driver integrated circuit (DDI) chip and display apparatus 有权

    公开(公告)号：US11348504B2

    公开(公告)日：2022-05-31

    申请号：US17139449

    申请日：2020-12-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Youngmok Kim ,  Kyunglyong Kang ,  Jungu Kang ,  Boyoung Seo ,  Yongsang Jeong

    IPC: G09G3/20

    Abstract: A display apparatus includes a display panel; and a display driver integrated circuit (DDI) chip coupled to the display panel, the DDI chip being configured to generate a display driving signal for driving the display panel based on image data. The DDI chip may include: a first embedded memory device embedded in the DDI chip and configured to store compensation data for compensating for electrical and optical characteristics of a plurality of pixels included in the display panel; a timing controller configured to control signals for driving the display panel, and to generate a data control signal based on the image data and the compensation data; and a data driver configured to provide a data voltage to the display panel according to the data control signal. The first embedded memory device may not include static random access memory (SRAM).

    Magnetic memory device
    2.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US12035540B2

    公开(公告)日：2024-07-09

    申请号：US17380081

    申请日：2021-07-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Boyoung Seo ,  Kangho Lee ,  Yoonjong Song ,  Junghyuk Lee

    IPC: H10B61/00 ,  H10B20/20

    CPC classification number: H10B61/22 ,  H10B20/20

    Abstract: A magnetic memory device includes a plurality of first bit lines and a plurality of second bit lines, a plurality of first source lines respectively corresponding to the plurality of first bit lines and a plurality of second source lines respectively corresponding to the plurality of second bit lines, a plurality of first memory cells connected between the plurality of first bit lines and the plurality of first source lines, respectively, in a first region, the plurality of first memory cells respectively including a first memory device and a first selection transistor, and a plurality of second memory cells connected between the plurality of second bit lines and the plurality of second source lines, respectively, in a second region, the plurality of second memory cells respectively including a second memory device and a second selection transistor.

    MAGNETIC MEMORY DEVICE
    3.
    发明申请
    MAGNETIC MEMORY DEVICE 有权

    公开(公告)号：US20220028928A1

    公开(公告)日：2022-01-27

    申请号：US17380081

    申请日：2021-07-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Boyoung Seo ,  Kangho Lee ,  Yoonjong Song ,  Junghyuk Lee

    IPC: H01L27/22 ,  H01L27/112

    Abstract: A magnetic memory device includes a plurality of first bit lines and a plurality of second bit lines, a plurality of first source lines respectively corresponding to the plurality of first bit lines and a plurality of second source lines respectively corresponding to the plurality of second bit lines, a plurality of first memory cells connected between the plurality of first bit lines and the plurality of first source lines, respectively, in a first region, the plurality of first memory cells respectively including a first memory device and a first selection transistor, and a plurality of second memory cells connected between the plurality of second bit lines and the plurality of second source lines, respectively, in a second region, the plurality of second memory cells respectively including a second memory device and a second selection transistor.

    Magnetic memory devices
    4.
    发明授权
    Magnetic memory devices 有权

    公开(公告)号：US10515678B2

    公开(公告)日：2019-12-24

    申请号：US16285295

    申请日：2019-02-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Boyoung Seo ,  Seongui Seo ,  Gwanhyeob Koh ,  Yongkyu Lee

    IPC: G11C11/16 ,  H01L27/22

    Abstract: A magnetic memory device includes a substrate, a landing pad on the substrate, first and second magnetic tunnel junction patterns disposed on the interlayer insulating layer and spaced apart from the landing pad when viewed from a plan view, and an interconnection structure electrically connecting a top surface of the second magnetic tunnel junction pattern to the landing pad. A distance between the landing pad and the first magnetic tunnel junction pattern is greater than a distance between the first and second magnetic tunnel junction patterns, and a distance between the landing pad and the second magnetic tunnel junction pattern is greater than the distance between the first and second magnetic tunnel junction patterns, when viewed from a plan view.

    Nonvolatile memory device and operating method thereof
    5.
    发明授权
    Nonvolatile memory device and operating method thereof 有权

    公开(公告)号：US10593402B2

    公开(公告)日：2020-03-17

    申请号：US16243796

    申请日：2019-01-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Suk-Soo Pyo ,  Hyuntaek Jung ,  Taejoong Song ,  Boyoung Seo

    IPC: G11C11/16 ,  G11C13/00

    Abstract: A nonvolatile memory device includes a first variable resistance element connected to a first bit line, and a first transmission ;ate connected between the first variable resistance element and a first source line. The first transmission gate includes a first insulating layer formed on a well connected to aground voltage, a first n-channel metal oxide semiconductor (NMOS) transistor formed on the first insulating layer and connected to a first word line, a second insulating layer formed on the well, the second insulating layer being in the same layer as the first insulating layer, and a first p-channel metal oxide semiconductor (PMOS) transistor formed on the second insulating layer and connected to a first write word line.

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