公开(公告)号：US20160293697A1

公开(公告)日：2016-10-06

申请号：US15058466

申请日：2016-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Woo KIM ,  Shigenobu MAEDA ,  Young-Moon CHOI ,  Yong-Bum KWON ,  Chang-Woo SOHN ,  Do-Sun LEE

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/161 ,  H01L23/528 ,  H01L29/16 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L21/823431 ,  H01L21/823418 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/785

Abstract: Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.

Abstract translation: 半导体器件可以包括多个有源散热片，每个有源散热片各自在衬底上沿第一方向延伸，栅极结构在第二方向上在有源鳍片上延伸;以及第一源/漏极层，位于邻近栅极的有源散热片的第一有源散热片上 结构体。 沿着第二方向截取的第一源/漏层的横截面的两个相对的侧壁中的至少一个可以包括相对于衬底的上表面具有斜率的弯曲部分。 斜面可能从底部向其顶部减小。

公开(公告)号：US20130140697A1

公开(公告)日：2013-06-06

申请号：US13685174

申请日：2012-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kun-Sang Park ,  Byung-Lyul PARK ,  Su-Kyoung KIM ,  Kwang-Jin MOON ,  Suk-Chul BANG ,  Do-Sun LEE ,  Dong-Chan LIM ,  Gil-Heyun CHOI

IPC: H01L23/00

CPC classification number: H01L24/28 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0655 ,  H01L2224/05009 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05547 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/08147 ,  H01L2224/08148 ,  H01L2224/0903 ,  H01L2224/8001 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/04941 ,  H01L2924/04953

Abstract: Provided are electrode-connecting structures or semiconductor devices, including a lower device including a lower substrate, a lower insulating layer formed on the lower substrate, and a lower electrode structure formed in the lower insulating layer, wherein the lower electrode structure includes a lower electrode barrier layer and a lower metal electrode formed on the lower electrode barrier layer, and an upper device including an upper substrate, an upper insulating layer formed under the upper substrate, and an upper electrode structure formed in the upper insulating layer, wherein the upper electrode structure includes an upper electrode barrier layer extending from the inside of the upper insulating layer under a bottom surface thereof and an upper metal electrode formed on the upper electrode barrier layer. The lower metal electrode is in direct contact with the upper metal electrode.

Abstract translation: 提供了电极连接结构或半导体器件，包括下部器件，包括下部衬底，形成在下部衬底上的下部绝缘层和形成在下部绝缘层中的下部电极结构，其中下部电极结构包括下部电极 阻挡层和形成在下电极阻挡层上的下金属电极，以及上装置，包括上基板，形成在上基板下的上绝缘层和形成在上绝缘层中的上电极结构，上电极 结构包括从其下表面上的上绝缘层的内部延伸的上电极阻挡层和形成在上电极阻挡层上的上金属电极。 下部金属电极与上部金属电极直接接触。