公开(公告)号：US20130230938A1

公开(公告)日：2013-09-05

申请号：US13854442

申请日：2013-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won KANG ,  Yong Chun KIM ,  Dong Hyun CHO ,  Jeong Tak OH ,  Dong Joon KIM

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

公开(公告)号：US20140235007A1

公开(公告)日：2014-08-21

申请号：US14146477

申请日：2014-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Nam Sung KIM ,  Dong Joon KIM ,  Kong Tan SA ,  Tong Ik SHIN ,  Do Young RHEE ,  Jeong Wook LEE

IPC: H01L33/00 ,  H01L21/673

CPC classification number: H01L33/007 ,  C23C16/4583 ,  C23C16/54 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/67326 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/32

Abstract: A method of manufacturing a semiconductor light emitting device, includes sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate to form a light emitting layer. The forming of the light emitting layer includes a first growth process, a second growth process and a transfer process. The first growth process uses a first susceptor having a mounting surface with a first curvature. The second growth process uses a second susceptor having a mounting surface with a second curvature different from the first curvature. The transfer process transfers the substrate from the first susceptor to the second susceptor between the first and second growth processes.

Abstract translation: 一种制造半导体发光器件的方法包括在衬底上顺序地生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光层。 发光层的形成包括第一生长过程，第二生长过程和转移过程。 第一生长过程使用具有第一曲率的安装表面的第一感受器。 第二生长过程使用具有不同于第一曲率的第二曲率的安装表面的第二感受器。 转移过程在第一和第二生长过程之间将衬底从第一感受器转移到第二感受器。

公开(公告)号：US20130214250A1

公开(公告)日：2013-08-22

申请号：US13848046

申请日：2013-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je Won KIM ,  Jeong Tak OH ,  Dong Joon KIM ,  Sun Woon KIM ,  Jin Sub PARK ,  Kyu Han LEE

IPC: H01L33/04

CPC classification number: H01L33/04 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1−x1−y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-31 AN (where 0

Abstract translation: 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x InIn 1 Ga（1-x1-y1）N（其中0≤x1≤1,0≤y1≤1,0≤x1+ y1）形成的n型覆盖层 @ 1），由在n型覆盖层上形成的未掺杂的InAGa1-31A AN（其中0