公开(公告)号：US20130228747A1

公开(公告)日：2013-09-05

申请号：US13855540

申请日：2013-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Heon HAN ,  Joo Young CHEON ,  Je Won KIM ,  Dong Ju LEE ,  Dong Chul SHIN ,  Hyun Wook SHIM ,  Jae Woong HAN

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.

Abstract translation: 提供一种氮化物半导体发光器件，其包括在低电流和高电流密度下具有增强的外部量子效率的有源层。 氮化物半导体发光器件包括第一导电型氮化物半导体层; 设置在所述第一导电型氮化物半导体层上并具有交替布置的多个量子阱层和至少一个量子势垒层的有源层; 以及设置在有源层上的第二导电型氮化物半导体层。 彼此相邻布置的多个量子阱层包括具有不同厚度的第一和第二量子阱层。

公开(公告)号：US20170077346A1

公开(公告)日：2017-03-16

申请号：US15341259

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Dong Yul LEE ,  Seung Hyun KIM ,  Jang Mi KIM ,  Suk Ho YOON ,  Sang Jun LEE

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/06

CPC classification number: H01L33/0075 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract translation: 一种制造半导体发光器件的方法包括：形成第一导电型半导体层，通过在第一导电型半导体层上交替地形成多个量子阱层和多个量子势垒层来形成有源层，并形成第二导电型半导体层 导电型半导体层。 多个量子势垒层包括与第一导电类型半导体层相邻的至少一个第一量子势垒层和与第二导电类型半导体层相邻的至少一个第二量子势垒层。 活性层的形成包括允许至少一个第一量子势垒层在第一温度下生长并允许至少一个第二量子势垒层在低于第一温度的第二温度下生长。

公开(公告)号：US20140175474A1

公开(公告)日：2014-06-26

申请号：US13967733

申请日：2013-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Jong Pa HONG ,  Seung Hyun KIM ,  Yun Hee SHIN ,  Jeong Wook LEE

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L33/20 ,  H01L2933/0091

Abstract: A method of manufacturing a semiconductor light emitting device, includes: forming a plurality of concave portions on a substrate; injecting silica particles into the plurality of concave portions; and forming a semiconductor layer on the substrate, the semiconductor layer including voids formed in portions of the semiconductor layer, the portions being located above the plurality of concave portions.

Abstract translation: 一种半导体发光器件的制造方法，包括：在基板上形成多个凹部; 将二氧化硅颗粒注入到所述多个凹部中; 以及在所述基板上形成半导体层，所述半导体层包括在所述半导体层的部分中形成的空隙，所述半导体层位于所述多个凹部的上方。

公开(公告)号：US20130134475A1

公开(公告)日：2013-05-30

申请号：US13684406

申请日：2012-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Jae Sung HYUN ,  Jin Young LIM ,  Jeong Wook LEE ,  Young Sun KIM

IPC: H01L33/00

CPC classification number: H01L33/0025 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32

Abstract: A semiconductor light emitting device is provided and includes an n-type semiconductor layer, a p-type semiconductor layer having a structure in which first and second doping regions including p-type impurities provided in different doping concentrations are alternately disposed one or more times; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the p-type semiconductor layer includes at least one interface between the first and second doping regions to prevent diffusion of p-type impurities.

Abstract translation: 提供了一种半导体发光器件，其包括n型半导体层，具有这样的结构的p型半导体层，其中包括以不同掺杂浓度提供的p型杂质的第一和第二掺杂区交替设置一次或多次; 以及设置在n型半导体层和p型半导体层之间的有源层，其中p型半导体层包括在第一和第二掺杂区域之间的至少一个界面，以防止p型杂质的扩散。

公开(公告)号：US20150240358A1

公开(公告)日：2015-08-27

申请号：US14506182

申请日：2014-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Sung KIM ,  Jong Won JANG ,  Sung Min CHOI ,  Sang Heon HAN ,  Suk Ho YOON ,  Jeong Wook LEE

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/45508 ,  C23C16/4584

Abstract: There is provided a susceptor. The susceptor includes: a body having a first surface, a second surface opposite the first surface, and an outer side surface connecting the first surface and the second surface; at least one pocket recessed from the first surface to accommodate at least one wafer therein, respectively; at least one tunnel respectively located below the pocket and extending from a center of the body to the outer side surface; at least one connecting channel each of which connects each of the pocket to each of the tunnel; and a supply line connected to the tunnel at the center of the body and supplying a gas from an outside in order for the gas to flow from the center of the body to the outer side surface.

Abstract translation: 提供了一个感受器。 感受体包括：主体，其具有第一表面，与第一表面相对的第二表面和连接第一表面和第二表面的外侧表面; 分别从所述第一表面凹入以容纳至少一个晶片的至少一个凹坑; 至少一个隧道分别位于所述口袋下方并从所述主体的中心延伸到所述外侧表面; 至少一个连接通道，每个连接通道将每个口袋连接到每个隧道; 以及在主体的中心连接到隧道的供应管线，并且从外部供应气体以使气体从主体的中心流向外侧表面。

公开(公告)号：US20150200332A1

公开(公告)日：2015-07-16

申请号：US14508784

申请日：2014-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Sang Heon HAN ,  Suk Ho YOON ,  Jae Sung HYUN

IPC: H01L33/14 ,  H01L33/60

CPC classification number: H01L33/04 ,  H01L29/15 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01S5/20 ,  H01S5/34 ,  H01L2924/00014

Abstract: There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.

Abstract translation: 提供了一种半导体发光器件。 该器件包括n型半导体层和p型半导体层。 p型半导体层包括多个第一层和第二层，每层包含p型杂质并且交替地层叠。 多个第一层的杂质浓度在远离n型半导体层的方向上增加。 在n型半导体层和p型半导体层之间设置有源层。

公开(公告)号：US20140131726A1

公开(公告)日：2014-05-15

申请号：US13974751

申请日：2013-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Don LEE ,  Jong Uk SEO ,  Sang Heon HAN

IPC: H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/02

Abstract: There are provided a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device includes a base layer configured of a group III nitride semiconductor, a polarity modifying layer formed on a group III element polar surface of the base layer, and a light emitting laminate having a multilayer structure of the group III nitride semiconductor formed on the polarity modifying layer, an upper surface of at least one layer in the multilayer structure being formed of an N polar surface.

Abstract translation: 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括由III族氮化物半导体构成的基极层，形成在基极层的III族元素极性表面上的极性调整层，以及形成有III族氮化物半导体的多层结构的发光层叠体 在极性改性层上，多层结构中的至少一层的上表面由N极性表面形成。

公开(公告)号：US20130168639A1

公开(公告)日：2013-07-04

申请号：US13733586

申请日：2013-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Sang Heon HAN ,  Jin Young LIM ,  Young Sun KIM

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L33/14 ,  H01L33/32

Abstract: A nitride semiconductor light emitting device includes first and second type nitride semiconductor layers. An active layer is disposed between the first and second type nitride semiconductor layers. A current spreading layer is disposed between the second type nitride semiconductor layer and the active layer. The current spreading layer includes first nitride thin films and second nitride thin films which are alternately laminated. The first nitride thin films have band gaps larger than those of the second nitride thin films. A first plurality of first nitride thin films are positioned at outer first and second sides of the current spreading layer. The first plurality of first nitride thin films have a thickness greater than that of a second plurality of first nitride thin films positioned between the first plurality of first nitride thin films.

Abstract translation: 氮化物半导体发光器件包括第一和第二氮化物半导体层。 有源层设置在第一和第二氮化物半导体层之间。 电流扩散层设置在第二氮化物半导体层和有源层之间。 电流扩散层包括交替层叠的第一氮化物薄膜和第二氮化物薄膜。 第一氮化物薄膜具有比第二氮化物薄膜大的带隙。 第一多个第一氮化物薄膜位于电流扩展层的外部第一和第二侧。 第一多个第一氮化物薄膜的厚度大于位于第一多个第一氮化物薄膜之间的第二多个第一氮化物薄膜的厚度。

公开(公告)号：US20140235007A1

公开(公告)日：2014-08-21

申请号：US14146477

申请日：2014-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Nam Sung KIM ,  Dong Joon KIM ,  Kong Tan SA ,  Tong Ik SHIN ,  Do Young RHEE ,  Jeong Wook LEE

IPC: H01L33/00 ,  H01L21/673

CPC classification number: H01L33/007 ,  C23C16/4583 ,  C23C16/54 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/67326 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/32

Abstract: A method of manufacturing a semiconductor light emitting device, includes sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate to form a light emitting layer. The forming of the light emitting layer includes a first growth process, a second growth process and a transfer process. The first growth process uses a first susceptor having a mounting surface with a first curvature. The second growth process uses a second susceptor having a mounting surface with a second curvature different from the first curvature. The transfer process transfers the substrate from the first susceptor to the second susceptor between the first and second growth processes.

Abstract translation: 一种制造半导体发光器件的方法包括在衬底上顺序地生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光层。 发光层的形成包括第一生长过程，第二生长过程和转移过程。 第一生长过程使用具有第一曲率的安装表面的第一感受器。 第二生长过程使用具有不同于第一曲率的第二曲率的安装表面的第二感受器。 转移过程在第一和第二生长过程之间将衬底从第一感受器转移到第二感受器。