公开(公告)号：US20130086846A1

公开(公告)日：2013-04-11

申请号：US13690430

申请日：2012-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong Wook LEE ,  Sang Chul Ryu

IPC: F25D23/02

CPC classification number: B29C44/1233 ,  B29C44/1238 ,  B29C44/1257 ,  B29C65/7811 ,  B29C65/7817 ,  F25D23/028 ,  F25D2400/18 ,  Y10T29/49629

Abstract: In a refrigerator door in which a decoration member is mounted to a door frame using a foam material, the foam material fills a space formed between the decoration member mounted to a front side of the door frame and a rear panel mounted to a rear side of the door frame. Accordingly, the decoration member can be fixed to the door frame through direct contact with the foam material.

Abstract translation: 在其中使用泡沫材料将装饰构件安装到门框的冰箱门中，泡沫材料填充安装在门框的前侧的装饰构件和安装到门框的后侧的后面板之间形成的空间 门框。 因此，装饰构件可以通过与泡沫材料直接接触而固定在门框上。

公开(公告)号：US20140235007A1

公开(公告)日：2014-08-21

申请号：US14146477

申请日：2014-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Nam Sung KIM ,  Dong Joon KIM ,  Kong Tan SA ,  Tong Ik SHIN ,  Do Young RHEE ,  Jeong Wook LEE

IPC: H01L33/00 ,  H01L21/673

CPC classification number: H01L33/007 ,  C23C16/4583 ,  C23C16/54 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/67326 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/32

Abstract: A method of manufacturing a semiconductor light emitting device, includes sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate to form a light emitting layer. The forming of the light emitting layer includes a first growth process, a second growth process and a transfer process. The first growth process uses a first susceptor having a mounting surface with a first curvature. The second growth process uses a second susceptor having a mounting surface with a second curvature different from the first curvature. The transfer process transfers the substrate from the first susceptor to the second susceptor between the first and second growth processes.

Abstract translation: 一种制造半导体发光器件的方法包括在衬底上顺序地生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光层。 发光层的形成包括第一生长过程，第二生长过程和转移过程。 第一生长过程使用具有第一曲率的安装表面的第一感受器。 第二生长过程使用具有不同于第一曲率的第二曲率的安装表面的第二感受器。 转移过程在第一和第二生长过程之间将衬底从第一感受器转移到第二感受器。

公开(公告)号：US20140159081A1

公开(公告)日：2014-06-12

申请号：US14013678

申请日：2013-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong Suk LEE ,  Ok Hyun KIM ,  Dong Yul LEE ,  Dong Ju LEE ,  Jeong Wook LEE ,  Heon Ho LEE

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/22

Abstract: A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.

Abstract translation: 提供一种形成半导体层的方法。 该方法包括在衬底上形成多个纳米棒并在衬底上形成下半导体层，以暴露至少部分纳米棒。 去除纳米棒以在下半导体层中形成空隙，并且在半导体层的下部和空隙上形成上半导体层。

公开(公告)号：US20150240358A1

公开(公告)日：2015-08-27

申请号：US14506182

申请日：2014-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Sung KIM ,  Jong Won JANG ,  Sung Min CHOI ,  Sang Heon HAN ,  Suk Ho YOON ,  Jeong Wook LEE

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/45508 ,  C23C16/4584

Abstract: There is provided a susceptor. The susceptor includes: a body having a first surface, a second surface opposite the first surface, and an outer side surface connecting the first surface and the second surface; at least one pocket recessed from the first surface to accommodate at least one wafer therein, respectively; at least one tunnel respectively located below the pocket and extending from a center of the body to the outer side surface; at least one connecting channel each of which connects each of the pocket to each of the tunnel; and a supply line connected to the tunnel at the center of the body and supplying a gas from an outside in order for the gas to flow from the center of the body to the outer side surface.

Abstract translation: 提供了一个感受器。 感受体包括：主体，其具有第一表面，与第一表面相对的第二表面和连接第一表面和第二表面的外侧表面; 分别从所述第一表面凹入以容纳至少一个晶片的至少一个凹坑; 至少一个隧道分别位于所述口袋下方并从所述主体的中心延伸到所述外侧表面; 至少一个连接通道，每个连接通道将每个口袋连接到每个隧道; 以及在主体的中心连接到隧道的供应管线，并且从外部供应气体以使气体从主体的中心流向外侧表面。

公开(公告)号：US20160372643A1

公开(公告)日：2016-12-22

申请号：US15146372

申请日：2016-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hak KIM ,  Tan SAKONG ,  Eun Deok SIM ,  Jeong Wook LEE ,  Jin Young LIM ,  Byoung Kyun KIM

IPC: H01L33/58 ,  H01L33/50 ,  H01L33/32 ,  H01L33/42 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/58 ,  H01L33/007 ,  H01L33/22 ,  H01L33/32 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2933/0083 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

Abstract translation: 半导体发光器件包括由第一材料形成的衬底; 以及从所述基板突出的凸部，包括：与所述基板的第一材料形成的第一层; 以及由与第一材料不同的第二材料形成并设置在第一层上的第二层。 第二层的第二高度大于第一层的第一高度。

公开(公告)号：US20180198019A1

公开(公告)日：2018-07-12

申请号：US15678462

申请日：2017-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jai Won JEAN ,  Min Ho KIM ,  Min Hwan KIM ,  Jang Mi KIM ,  Chul Min KIM ,  Jeong Wook LEE ,  Jae Deok JEONG ,  Yong Seok CHOI

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/12 ,  H01L33/325

Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

公开(公告)号：US20140175474A1

公开(公告)日：2014-06-26

申请号：US13967733

申请日：2013-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Jong Pa HONG ,  Seung Hyun KIM ,  Yun Hee SHIN ,  Jeong Wook LEE

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L33/20 ,  H01L2933/0091

Abstract: A method of manufacturing a semiconductor light emitting device, includes: forming a plurality of concave portions on a substrate; injecting silica particles into the plurality of concave portions; and forming a semiconductor layer on the substrate, the semiconductor layer including voids formed in portions of the semiconductor layer, the portions being located above the plurality of concave portions.

Abstract translation: 一种半导体发光器件的制造方法，包括：在基板上形成多个凹部; 将二氧化硅颗粒注入到所述多个凹部中; 以及在所述基板上形成半导体层，所述半导体层包括在所述半导体层的部分中形成的空隙，所述半导体层位于所述多个凹部的上方。

公开(公告)号：US20130134475A1

公开(公告)日：2013-05-30

申请号：US13684406

申请日：2012-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Jae Sung HYUN ,  Jin Young LIM ,  Jeong Wook LEE ,  Young Sun KIM

IPC: H01L33/00

CPC classification number: H01L33/0025 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32

Abstract: A semiconductor light emitting device is provided and includes an n-type semiconductor layer, a p-type semiconductor layer having a structure in which first and second doping regions including p-type impurities provided in different doping concentrations are alternately disposed one or more times; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the p-type semiconductor layer includes at least one interface between the first and second doping regions to prevent diffusion of p-type impurities.

Abstract translation: 提供了一种半导体发光器件，其包括n型半导体层，具有这样的结构的p型半导体层，其中包括以不同掺杂浓度提供的p型杂质的第一和第二掺杂区交替设置一次或多次; 以及设置在n型半导体层和p型半导体层之间的有源层，其中p型半导体层包括在第一和第二掺杂区域之间的至少一个界面，以防止p型杂质的扩散。