CHEMICAL VAPOR DEPOSITION APPARATUS HAVING SUSCEPTOR
    1.
    发明申请
    CHEMICAL VAPOR DEPOSITION APPARATUS HAVING SUSCEPTOR 审中-公开
    具有SUSCEPTOR的化学气相沉积装置

    公开(公告)号:US20130255578A1

    公开(公告)日:2013-10-03

    申请号:US13798772

    申请日:2013-03-13

    CPC classification number: H01L21/02104 C23C16/4584 C23C16/46

    Abstract: A chemical vapor deposition (CVD) apparatus including a chamber, a susceptor in the chamber, and a heating chamber may be provided. The susceptor includes a rotor, a rotational shaft coupled to a lower portion of the rotor, a driving device coupled to the rotational shaft, and at least one pocket defined at an upper surface of the rotor. The driving device rotatably drives the rotational shaft. The at least one pocket includes a mounting portion configured to receive a substrate thereon and a protruding portion, e.g., a convex portion, protruding from a bottom surface of the at least one pocket such that the protruding portion is positioned at a region corresponding to the rotational shaft. The heating unit surrounds the rotational shaft and heats the substrate.

    Abstract translation: 可以提供包括室,腔室中的基座和加热室的化学气相沉积(CVD)设备。 基座包括转子,联接到转子的下部的旋转轴,耦合到旋转轴的驱动装置和限定在转子的上表面的至少一个凹部。 驱动装置可旋转地驱动旋转轴。 所述至少一个口袋包括被配置为在其上容纳衬底的安装部分和从所述至少一个口袋的底表面突出的突出部分,例如凸起部分,使得所述突出部分位于对应于 旋转轴。 加热单元围绕旋转轴并加热基板。

    METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
    2.
    发明申请
    METHOD OF MANUFACTURING LIGHT EMITTING DEVICE 有权
    制造发光装置的方法

    公开(公告)号:US20130244353A1

    公开(公告)日:2013-09-19

    申请号:US13844569

    申请日:2013-03-15

    CPC classification number: H01L33/005 H01L33/26

    Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

    Abstract translation: 提供一种制造半导体发光器件的方法,该方法包括通过在衬底上生长第一导电类型半导体层,有源层和第二导电类型半导体层来形成发光结构。 发光结构的形成包括:在形成发光结构的一部分之后形成保护层,在保护层上形成牺牲层; 并且在牺牲层上连续地形成发光结构的另一部分。

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