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    Image sensor
    1.
    发明授权
    Image sensor 有权

    公开(公告)号：US11183526B2

    公开(公告)日：2021-11-23

    申请号：US16701750

    申请日：2019-12-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： In Ho Ro ,  Doowon Kwon ,  Seokjin Kwon ,  Jameyung Kim ,  Jinyoung Kim ,  Sungki Min ,  Kwansik Cho ,  Mangeun Cho ,  Ho-Chul Ji

    IPC: H01L21/00 ,  H01L27/146

    Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.

    Integrated circuit device packages including optical elements
    2.
    发明授权
    Integrated circuit device packages including optical elements 有权
    集成电路器件封装包括光学元件

    公开(公告)号：US09541716B2

    公开(公告)日：2017-01-10

    申请号：US14206258

    申请日：2014-03-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ho-Chul Ji ,  Seung-Hyuk Chang

    IPC: G02B6/42

    CPC classification number: G02B6/4206 ,  G02B6/4203 ,  G02B6/4214

    Abstract: Integrated circuit device packages including optical elements are provided. The integrated circuit device package may include an integrated circuit device and a conductive pad on a first surface of the integrated circuit device. The conductive pad may be electrically connected to the integrated circuit device and may be configured to transmit an electrical signal. The integrated circuit device package may also include an optical element in the integrated circuit device and the optical element may be configured to transmit an optical signal through a second surface of the integrated circuit device that is opposite the first surface of the integrated circuit device.

    Abstract translation: 提供了包括光学元件的集成电路器件封装。 集成电路器件封装可以包括在集成电路器件的第一表面上的集成电路器件和导电焊盘。 导电焊盘可以电连接到集成电路器件，并且可以被配置为传输电信号。 集成电路器件封装还可以包括集成电路器件中的光学元件，并且光学元件可以被配置为通过与集成电路器件的第一表面相对的集成电路器件的第二表面传输光信号。

    PHOTONIC INTEGRATED CIRCUIT DEVICES AND METHODS OF FORMING SAME
    3.
    发明申请
    PHOTONIC INTEGRATED CIRCUIT DEVICES AND METHODS OF FORMING SAME 有权

    公开(公告)号：US20210103094A1

    公开(公告)日：2021-04-08

    申请号：US17102978

    申请日：2020-11-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Keun Yeong Cho ,  Hyunil Byun ,  Ho-Chul Ji

    IPC: G02B6/12 ,  G01M11/00 ,  G02F1/225

    Abstract: A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

    Image sensor including a separation structure
    7.
    发明授权
    Image sensor including a separation structure 有权

    公开(公告)号：US12230658B2

    公开(公告)日：2025-02-18

    申请号：US17548712

    申请日：2021-12-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Min Ho Jang ,  Seung Kuk Kang ,  Hae Sung Jung ,  Kwan Sik Cho ,  Ho-Chul Ji

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate having first and second surfaces and first and second regions. Unit pixels including photoelectric conversion layers are arranged inside the first region. A pixel separation pattern extends from the first surface to the second surface in the first region, separates each of the unit pixels, and includes a pixel separation spacer film and a pixel separation filling film. A dummy pixel separation pattern extends from the first surface to the second surface in the second region, and includes a dummy pixel separation filling film. A wiring structure disposed on the second surface includes an inter-wiring insulating film and a first wiring. A first contact directly connects the dummy pixel separation filling film and connects the dummy pixel separation filling film to the first wiring. A height of the pixel separation filling film is greater than a height of the dummy pixel separation filling film.

    Photodetector structure
    8.
    发明授权
    Photodetector structure 有权

    公开(公告)号：US11428877B2

    公开(公告)日：2022-08-30

    申请号：US17037864

    申请日：2020-09-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Keun Yeong Cho ,  Ho-Chul Ji

    IPC: G02B6/42 ,  H01L31/0232 ,  G02B6/12 ,  H01L31/0216

    Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

    Optical integrated circuits
    9.
    发明授权
    Optical integrated circuits 有权

    公开(公告)号：US10901151B2

    公开(公告)日：2021-01-26

    申请号：US16217711

    申请日：2018-12-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Keun-Yeong Cho ,  Ho-Chul Ji

    IPC: G02B6/122 ,  G02B6/132 ,  G02B6/124 ,  G02B6/13 ,  G02B6/12 ,  G02B6/125 ,  G02B6/136

    Abstract: Optical integrated circuits are provided. An optical integrated circuit includes a substrate including a single crystalline semiconductor material. The optical integrated circuit includes an insulation region in a trench in the substrate. The optical integrated circuit includes a first core on the insulation region. The first core includes the single crystalline semiconductor material. Moreover, the optical integrated circuit includes a second core that is spaced apart from the first core. The second core includes a material having a refractive index that is lower than that of the first core.

    Photodetector structure
    10.
    发明授权
    Photodetector structure 有权

    公开(公告)号：US10830968B2

    公开(公告)日：2020-11-10

    申请号：US16211344

    申请日：2018-12-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Keun Yeong Cho ,  Ho-Chul Ji

    IPC: G02B6/42 ,  H01L31/0232 ,  G02B6/12 ,  H01L31/0216

    Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

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