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公开(公告)号：US20190169031A1
公开(公告)日：2019-06-06
申请号：US16267491
申请日：2019-02-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jiyeon KU , Wonhee Ko , Hyowon KIM
IPC: C01B32/194 , H01L21/02 , C23C16/26
Abstract: Example embodiments relate to graphene structures having nanobubbles, and/or to a method of manufacturing the graphene structure. The graphene structure includes a substrate and a graphene layer on the substrate, the graphene layer having a plurality of convex portions. One or more of the plurality of convex portions has a hollow structure, and the graphene layer has a band gap that is due to the plurality of convex portions. A noble gas is included between the substrate and the convex portions.
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2.发明申请GRAPHENE LAYER, METHOD OF FORMING THE SAME, DEVICE INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE DEVICE 有权石墨层，其形成方法，包括石墨层的装置和制造装置的方法公开(公告)号：US20160126317A1
公开(公告)日：2016-05-05
申请号：US14928026
申请日：2015-10-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyowon KIM , Jaeho LEE
CPC classification number: H01L29/1606 , C01B32/186 , C01B2204/02 , C01B2204/22 , C01B2204/30 , H01L21/02527 , H01L21/02573 , H01L21/02645 , H01L29/6603 , H01L51/0045 , H01L51/0558 , Y02E10/549
Abstract: A graphene layer, a method of forming the graphene layer, a device including the graphene layer, and a method of manufacturing the device are provided. The method of forming the graphene layer may include forming a first graphene at a first temperature using a first source gas and forming a second graphene at a second temperature using a second source gas. One of the first and second graphenes may be a P-type graphene, and the other one of the first and second graphenes may be an N-type graphene. The first graphene and the second graphene together form a P—N junction.
Abstract translation: 提供石墨烯层，形成石墨烯层的方法，包括石墨烯层的装置以及制造该装置的方法。 形成石墨烯层的方法可以包括使用第一源气体在第一温度下形成第一石墨烯，并且在第二温度下使用第二源气体形成第二石墨烯。 第一和第二石墨烯之一可以是P型石墨烯，第一和第二石墨烯中的另一个可以是N型石墨烯。 第一个石墨烯和第二个石墨烯一起形成一个P-N结。
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公开(公告)号：US20170170012A1
公开(公告)日：2017-06-15
申请号：US15377237
申请日：2016-12-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wonhee KO , Hyowon KIM , Jiyeon KU , Insu JEON
IPC: H01L21/02 , H01L29/66 , H01L21/324 , H01L21/265
CPC classification number: H01L21/02527 , H01L21/02247 , H01L21/02255 , H01L21/02425 , H01L21/02488 , H01L21/0262 , H01L21/02664 , H01L29/1606 , H01L29/42364 , H01L29/518 , H01L29/66045 , H01L29/778
Abstract: Methods of intercalating an insulating layer between a metal catalyst layer and a graphene layer and methods of fabricating a semiconductor device using the intercalating method are provided. The method of intercalating the insulating layer includes forming the graphene layer on the metal catalyst substrate, intercalating nitrogen ions between the metal catalyst substrate and the graphene layer, and forming the insulating layer between the metal catalyst substrate and the graphene layer by heating the metal catalyst substrate to chemically combine the nitrogen ions with the metal catalyst substrate.
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Patent Agency Ranking
公开(公告)号：US20170223198A1
公开(公告)日：2017-08-03
申请号：US15388104
申请日：2016-12-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungsoon KIM , Yongchan KEH , Hyowon KIM , Byeonghoon PARK , Kisuk SUNG , Jungkee LEE , Kihuk LEE , Changryong HEO
CPC classification number: H04N1/00204 , H04L7/0008 , H04L43/16 , H04L69/22 , H04L69/324 , H04N5/04 , H04N5/232 , H04N5/23293 , H04N2201/0084
Abstract: An electronic device and data processing method thereof is provided. The electronic device of the present disclosure includes a first processor which acquires image data from a camera and generates a data frame based on the image data and a second processor which receives the data frame from the first processor, checks attribute information of the data frame, and supplies information on the data frame to at least one of a plurality of applications corresponding to the attribute information.
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公开(公告)号：US20170179234A1
公开(公告)日：2017-06-22
申请号：US15371387
申请日：2016-12-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyowon KIM
IPC: H01L29/16 , H01L29/06 , H01L29/66 , H01L21/02 , H01L29/786
CPC classification number: H01L29/1606 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/194 , C01B2204/04 , H01L21/02381 , H01L21/02444 , H01L21/02491 , H01L21/02502 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/02587 , H01L21/0262 , H01L29/167 , H01L29/6603 , H01L29/66045 , H01L29/66977 , H01L29/778 , H01L29/78684 , H01L29/861
Abstract: A multilayer graphene, a method of forming the same, a device including the multilayer graphene, and a method of manufacturing the device are provided. In the method of forming the multilayer graphene, a first graphene is formed on an underlayer, and then a multilayer graphene is formed by exposing two adjacent areas on the first graphene to a source gas. By differentiating temperatures and source gasses, the multilayer graphene has different electrical characteristics in the two adjacent areas.
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6.发明申请公开(公告)号：US20170117399A1
公开(公告)日：2017-04-27
申请号：US15334684
申请日：2016-10-26
Inventor： Wonhee KO , Hyowon KIM , Jiyeon KU , Donggyu KIM , Seunghwa RYU , Seongjun JEONG
IPC: H01L29/778 , H01L29/06 , H01L21/306 , H01L21/02 , H01L21/308 , H01L29/165 , H01L29/66
CPC classification number: H01L21/30604 , H01L21/02524 , H01L21/3085 , H01L23/481 , H01L29/413
Abstract: A conductor including a graphene layer and a method of manufacturing the conductor are provided. The conductor may further include a nano pattern disposed on a substrate, and the graphene layer may be formed on the nano pattern. The nano pattern may have any various shapes and include a material that interacts with the graphene layer. The nano pattern and the graphene layer included in the conductor may interact with each other, such that the electric characteristics of the conductor are maintained while the heat transfer characteristics thereof are improved.
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7.发明申请公开(公告)号：US20160247942A1
公开(公告)日：2016-08-25
申请号：US15051270
申请日：2016-02-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Insu JEON , Jiyeon KU , Hyowon KIM
IPC: H01L29/786 , H01L29/66 , H01L21/04 , H01L29/16
CPC classification number: H01L29/78696 , H01L21/02425 , H01L21/02488 , H01L21/02499 , H01L21/02527 , H01L21/02664 , H01L21/044 , H01L29/1606 , H01L29/66045
Abstract: A method includes growing a graphene layer on a metal layer, intercalating a first material between the metal layer and the graphene layer by heating the first material at a first pressure and a first temperature, and intercalating a second material between the metal layer and the graphene layer by heating the second material at a second pressure different from the first pressure and a second temperature different from the first temperature. Accordingly, the first material and the second material are chemically bonded to each other to form an insulating layer, and the insulating layer may be between the metal layer and the graphene layer.
Abstract translation: 一种方法包括在金属层上生长石墨烯层，通过在第一压力和第一温度下加热第一材料，在金属层和石墨烯层之间插入第一材料，并在金属层和石墨烯之间插入第二材料 在不同于第一压力的第二压力和不同于第一温度的第二温度下加热第二材料。 因此，第一材料和第二材料彼此化学键合以形成绝缘层，绝缘层可以在金属层和石墨烯层之间。
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8.发明申请公开(公告)号：US20160122189A1
公开(公告)日：2016-05-05
申请号：US14928957
申请日：2015-10-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jiyeon KU , Wonhee KO , Hyowon KIM
CPC classification number: C01B32/194 , C01B2204/02 , C01B2204/22 , C23C16/26 , H01L21/02422 , H01L21/02425 , H01L21/02433 , H01L21/02527 , H01L21/02587 , H01L21/0262 , H01L21/02664
Abstract: Example embodiments relate to graphene structures having nanobubbles, and/or to a method of manufacturing the graphene structure. The graphene structure includes a substrate and a graphene layer on the substrate, the graphene layer having a plurality of convex portions. One or more of the plurality of convex portions has a hollow structure, and the graphene layer has a band gap that is due to the plurality of convex portions. A noble gas is included between the substrate and the convex portions.
Abstract translation: 示例性实施方案涉及具有纳米气泡的石墨烯结构和/或制造石墨烯结构的方法。 所述石墨烯结构在基板上包括基板和石墨烯层，所述石墨烯层具有多个凸部。 多个凸部中的一个或多个具有中空结构，并且石墨烯层具有由于多个凸部导致的带隙。 在基板和凸部之间包含惰性气体。
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