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公开(公告)号：US20190198496A1
公开(公告)日：2019-06-27
申请号：US16255519
申请日：2019-01-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： In Wook OH , Jae Seok YANG , Jong Hyun LEE , Hyun Jae LEE , Sung Wook HWANG
IPC: H01L27/088 , H01L27/02 , G06F17/50 , H01L23/528
CPC classification number: H01L27/0886 , G06F17/5072 , H01L23/528 , H01L27/0207
Abstract: A semiconductor device includes circuit active fin lines and circuit gate lines intersecting each other in a circuit active region, dummy active fin lines and dummy gate lines intersecting each other in a dummy active region, the active fin lines and the dummy active fin lines having same width and pitch, and the circuit gate lines and the dummy gate lines having same width and pitch, wherein at least some of the dummy active fin lines are aligned with and collinear with respective circuit active fin lines, and at least some of the dummy gate lines are aligned with and collinear with respective circuit gate lines.
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公开(公告)号：US20170287909A1
公开(公告)日：2017-10-05
申请号：US15372840
申请日：2016-12-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： In Wook OH , Jae Seok YANG , Jong Hyun LEE , Hyun Jae LEE , Sung Wook HWANG
IPC: H01L27/088 , G06F17/50 , H01L23/528 , H01L27/02
CPC classification number: H01L27/0886 , G06F17/5072 , H01L23/528 , H01L27/0207
Abstract: A semiconductor device includes circuit active fin lines and circuit gate lines intersecting each other in a circuit active region, dummy active fin lines and dummy gate lines intersecting each other in a dummy active region, the active fin lines and the dummy active fin lines having same width and pitch, and the circuit gate lines and the dummy gate lines having same width and pitch, wherein at least some of the dummy active fin lines are aligned with and collinear with respective circuit active fin lines, and at least some of the dummy gate lines are aligned with and collinear with respective circuit gate lines.
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公开(公告)号：US20230130025A1
公开(公告)日：2023-04-27
申请号：US17938338
申请日：2022-10-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Cha Won KOH , Tsunehiro NISHI , Ji Young PARK , Dong Il SHIN , Chang Soo WOO , Min Young LEE , Hyun Jae LEE
Abstract: A photoresist composition including an organometallic compound, and a method for fabricating a semiconductor device using the same are provided. The photoresist composition may include an organometallic compound, a radical sensitizer including a structure of Chemical formula 2-1 or Chemical formula 2-2, and a solvent.
In Chemical formula 2-1, A1 is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, and R1, R2 and R3 are each independently hydrogen, a halogen, a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, or a hetero-functional group.
In Chemical formula 2-2, A2 is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, and R4 and R5 are each independently hydrogen, a halogen, a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, or a hetero-functional group.-
公开(公告)号：US20230072243A1
公开(公告)日：2023-03-09
申请号：US17719680
申请日：2022-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun Bae KIM , Ji Hwan KIM , Hyong Seo YOON , Sang Ki NAM , Hyun Jae LEE , Myung Geun JEONG
IPC: H01J37/32
Abstract: A substrate treatment apparatus including a chamber; a lower electrode in the chamber, wherein the substrate is on the lower electrode; an upper electrode in the chamber, and above the lower electrode; a pulse signal generator configured to generate a pulse signal; and a bias power supply configured to generate bias power having a pulsed non-sinusoidal waveform using the pulse signal, and supply the generated bias power to the lower electrode, wherein the bias power supply includes a DC power generator configured to receive the pulse signal and generate a direct-current (DC) voltage subjected to feedforward compensation based on the pulse signal; and a modulator configured to generate a power signal having a non-sinusoidal waveform using the DC voltage, and filter the power signal using the pulse signal to generate the bias power having the pulsed non-sinusoidal waveform.
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Patent Agency Ranking
公开(公告)号：US20150369588A1
公开(公告)日：2015-12-24
申请号：US14839553
申请日：2015-08-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwang Soo KIM , Hyun Jae LEE , Byeong Hwan JEON , Chang Hoon CHOI
IPC: G01B11/00
CPC classification number: G01B11/00 , G01B11/24 , G01B11/28 , G01B2210/56
Abstract: According to example embodiments, an optical measurement apparatus may include: a station configured to support a measurement target; an image acquisition unit configured to acquire a one-dimensional (1D) line image of the measurement target; a driver configured to move the station and the image acquisition unit; and a controller. The controller may be configured to control the driver and the image acquisition unit to acquire a plurality of 1D line images of the measurement target while varying a distance between the image acquisition unit and the measurement target to generate a two-dimensional (2D) scan image from combining the plurality of 1D line images; and to detect a pattern of the measurement target based on comparing a plurality of 2D reference images and the 2D scan image. The optical measurement apparatus may measure critical dimensions of non-repeating ultrafine patterns at high speed.
Abstract translation: 根据示例实施例，光学测量装置可以包括：被配置为支持测量目标的站; 图像获取单元，被配置为获取所述测量对象的一维（1D）线图像; 驱动器，被配置为移动所述站和所述图像获取单元; 和控制器。 控制器可以被配置为控制驱动器和图像获取单元，以在改变图像获取单元和测量对象之间的距离的同时获取测量对象的多个1D线图像，以生成二维（2D）扫描图像 从组合多个1D线图像; 并且基于比较多个2D参考图像和2D扫描图像来检测测量对象的图案。 光学测量装置可以高速度地测量非重复超细纹图案的临界尺寸。
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6.发明公开公开(公告)号：US20240234096A1
公开(公告)日：2024-07-11
申请号：US18239155
申请日：2023-08-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Jin CHO , Yi Hwan KIM , Sang Chul HAN , Sang Ki NAM , Jun Ho LEE , Hyun Jae LEE
CPC classification number: H01J37/3244 , C23C16/26 , C23C16/48 , H01J37/3211 , H01J37/32623 , H01J2237/3321 , H01L21/033
Abstract: A method for fabricating a semiconductor device includes loading a substrate into a lower region in a chamber separated by a shower head into the lower region and an upper region, supplying a source gas to the upper region, generating plasma including ions and radicals in the upper region, using a magnetic field and an electric field generated from an antenna on the upper region, and the source gas, supplying the ions and the radicals generated in the upper region into the lower region through a plurality of plasma inlet holes formed to penetrate the shower head in a vertical direction, supplying a process gas into the lower region through a plurality of process gas supply holes formed in the shower head, and forming a deposition film on the substrate inside the lower region, using the ions, the radicals and the process gas.
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公开(公告)号：US20170271204A1
公开(公告)日：2017-09-21
申请号：US15405762
申请日：2017-01-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Wook HWANG , Jong Hyun LEE , Jae Seok YANG , In Wook OH , Hyun Jae LEE
IPC: H01L21/768 , G06F17/50
CPC classification number: H01L21/0337 , H01L21/76802 , H01L23/481
Abstract: A method for manufacturing a semiconductor device includes generating a layout including a first conductive pattern region and a second conductive pattern region. A first interlayer insulating film is formed on a substrate, the first interlayer insulating film including a first region corresponding to the first conductive pattern region, a second region corresponding to the second conductive pattern region, and a third region spaced apart from the first and second regions and disposed between the first and second regions. First, second and third lower metal wirings are formed to respectively fill the first, second and third recesses of the first interlayer insulating film. A second interlayer insulating film is formed on the first interlayer insulating film. A first dummy via hole is formed in the second interlayer insulating film to expose the third lower metal wiring. The third lower metal wiring is electrically isolated.
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公开(公告)号：US20180182758A1
公开(公告)日：2018-06-28
申请号：US15902025
申请日：2018-02-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： In Wook OH , Jae Seok YANG , Jong Hyun LEE , Hyun Jae LEE , Sung Wook HWANG
IPC: H01L27/088 , H01L27/02 , G06F17/50 , H01L23/528
CPC classification number: H01L27/0886 , G06F17/5072 , H01L23/528 , H01L27/0207
Abstract: A semiconductor device includes circuit active fin lines and circuit gate lines intersecting each other in a circuit active region, dummy active fin lines and dummy gate lines intersecting each other in a dummy active region, the active fin lines and the dummy active fin lines having same width and pitch, and the circuit gate lines and the dummy gate lines having same width and pitch, wherein at least some of the dummy active fin lines are aligned with and collinear with respective circuit active fin lines, and at least some of the dummy gate lines are aligned with and collinear with respective circuit gate lines.
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公开(公告)号：US20130214121A1
公开(公告)日：2013-08-22
申请号：US13773736
申请日：2013-02-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun Jae LEE , Myoung Ki AHN , Kwang Soo KIM , In Ho SEO , Chang Hoon CHOI
IPC: G02B27/40
Abstract: An autofocus control apparatus includes a beam splitter, a condenser lens and a detector. The beam splitter directs light beams from a light source toward a sample and passes light beams reflected from the sample to the condenser lens. The condenser lens condenses the light beams, and the detector detects a focal point deviation of the sample relative to a focal point of the condenser lens. The focal point deviation is detected based on an intersection of a focal line passing through different focal points of the condenser lens and a light receiving plane configured to receive the light beams passing through the condenser lens.
Abstract translation: 自动对焦控制装置包括分束器，聚光透镜和检测器。 分束器将来自光源的光束引向样品，并将从样品反射的光束传递到聚光透镜。 聚光透镜冷凝光束，并且检测器检测样品相对于聚光透镜的焦点的焦点偏差。 基于通过聚光透镜的不同焦点的焦点线和被配置为接收通过聚光透镜的光束的受光面的交点，检测焦点偏差。
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