公开(公告)号：US20190079702A1

公开(公告)日：2019-03-14

申请号：US15970237

申请日：2018-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk YEON ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/10 ,  H01L27/11578 ,  G11C16/14 ,  G11C16/04

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US20210255810A1

公开(公告)日：2021-08-19

申请号：US17307309

申请日：2021-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk YEON ,  Seontaek KIM ,  Young-Ho PARK ,  Eun Ju CHOI ,  Yonghwa LEE

IPC: G06F3/06 ,  G11C16/04 ,  G06F12/10 ,  G11C7/10 ,  H01L27/11578 ,  G11C16/14 ,  G06F12/0802 ,  G06F3/16

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US20250138746A1

公开(公告)日：2025-05-01

申请号：US18738832

申请日：2024-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jesuk YEON ,  In Hwan DOH

IPC: G06F3/06

Abstract: An operating method of a storage device which includes a nonvolatile memory device and a controller controlling the nonvolatile memory device includes receiving, by the controller from a host device, a first logical address of a source range entry, a second logical address of a destination range entry, and a first copy command including a first flag that indicates a background copy is set, mapping, at the controller, a first physical address on the second logical address, mapping, at the controller, a second physical address on the second logical address and/or the first physical address, transmitting, by the controller to the host device, a first notification of a completion of the first copy command, and after the controller transmits the first notification, reading, at the nonvolatile memory device, first data stored at the first physical address and writing the first data at the second physical address.

公开(公告)号：US20230350609A1

公开(公告)日：2023-11-02

申请号：US18345124

申请日：2023-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk YEON ,  Seontaek KIM ,  Young-Ho PARK ,  Eun Ju CHOI ,  Yonghwa LEE

IPC: G06F3/06 ,  G11C16/04 ,  G06F12/10 ,  G11C7/10 ,  G11C16/14 ,  G06F12/0802 ,  G06F3/16 ,  H10B43/20

CPC classification number: G06F3/0679 ,  G06F3/0659 ,  G06F3/061 ,  G06F3/0629 ,  G06F3/064 ,  G11C16/04 ,  G06F12/10 ,  G11C7/1015 ,  G11C7/1084 ,  G11C16/14 ,  G06F12/0802 ,  G06F3/0688 ,  G06F3/167 ,  G06F3/0611 ,  H10B43/20 ,  G11C16/26

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.