公开(公告)号：US12032832B2

公开(公告)日：2024-07-09

申请号：US17866844

申请日：2022-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Jin Moon ,  Chang Hwan Kim ,  Young-Sik Lee ,  Eun Ju Choi

IPC: G06F3/06

CPC classification number: G06F3/0616 ,  G06F3/0631 ,  G06F3/0679

Abstract: A storage device and an operating method thereof are provided. Provided is a storage device including, a memory cell, and a storage controller which includes a flash controller that performs a data operation on the memory cell, and a processor that executes an RTOS (Real Time Operating System) for controlling the flash controller, wherein the RTOS communicates with the storage controller and operates in a normal operation mode, the RTOS generates a snapshot data in a debug mode when a defect occurs, the RTOS switches to the debug mode through context switching in the normal operation mode, and the RTOS operates in the normal operation mode, when an urgent work occurs, while performing an operation of generating the snapshot data in the debug mode.

公开(公告)号：US11029893B2

公开(公告)日：2021-06-08

申请号：US15970237

申请日：2018-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk Yeon ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F12/10 ,  G06F12/0802 ,  G06F3/16 ,  G11C16/04 ,  G11C7/10 ,  H01L27/11578 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US20190079702A1

公开(公告)日：2019-03-14

申请号：US15970237

申请日：2018-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk YEON ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/10 ,  H01L27/11578 ,  G11C16/14 ,  G11C16/04

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US12242761B2

公开(公告)日：2025-03-04

申请号：US18345124

申请日：2023-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk Yeon ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F3/16 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/10 ,  G11C16/04 ,  G11C16/14 ,  H10B43/20 ,  G11C16/10 ,  G11C16/26

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US11693605B2

公开(公告)日：2023-07-04

申请号：US17307309

申请日：2021-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk Yeon ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F12/10 ,  G06F12/0802 ,  G06F3/16 ,  G11C16/04 ,  G11C7/10 ,  G11C16/14 ,  H10B43/20 ,  G11C16/26 ,  G11C16/10

CPC classification number: G06F3/0679 ,  G06F3/061 ,  G06F3/064 ,  G06F3/0611 ,  G06F3/0629 ,  G06F3/0659 ,  G06F3/0688 ,  G06F3/167 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/1015 ,  G11C7/1084 ,  G11C16/04 ,  G11C16/14 ,  H10B43/20 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.