公开(公告)号：US12242761B2

公开(公告)日：2025-03-04

申请号：US18345124

申请日：2023-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk Yeon ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F3/16 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/10 ,  G11C16/04 ,  G11C16/14 ,  H10B43/20 ,  G11C16/10 ,  G11C16/26

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US11693605B2

公开(公告)日：2023-07-04

申请号：US17307309

申请日：2021-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk Yeon ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F12/10 ,  G06F12/0802 ,  G06F3/16 ,  G11C16/04 ,  G11C7/10 ,  G11C16/14 ,  H10B43/20 ,  G11C16/26 ,  G11C16/10

CPC classification number: G06F3/0679 ,  G06F3/061 ,  G06F3/064 ,  G06F3/0611 ,  G06F3/0629 ,  G06F3/0659 ,  G06F3/0688 ,  G06F3/167 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/1015 ,  G11C7/1084 ,  G11C16/04 ,  G11C16/14 ,  H10B43/20 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US11112976B2

公开(公告)日：2021-09-07

申请号：US16362733

申请日：2019-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung Chul Jang ,  Jae Ju Kim ,  Young-Ho Park ,  Chan Soo Kim ,  Ju Pyung Lee

IPC: G06F3/06 ,  G06F12/02

Abstract: A data storage device includes a non-volatile memory, including a first region and a second region different from the first region, and a controller which stores first and second data in a first region of the non-volatile memory. The first region of the non-volatile memory includes first and second storage regions. A part of the first data is stored in the first storage region, and another part of the first data is stored in the second storage region. The second data is stored in the second storage region, and an offset value of the second storage region in which the second data is started is stored in the second region of the non-volatile memory.

公开(公告)号：US11133443B2

公开(公告)日：2021-09-28

申请号：US16507183

申请日：2019-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chi-Goo Kang ,  Young-Kyung Kim ,  Young-Ho Park ,  Jong-Won Park ,  Seog-Ho Lim

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/48 ,  H01L33/64 ,  H01L33/62

Abstract: A light emitting device package includes a mounting substrate including first and second lower electrode portions separated by a first groove, first and second upper electrode portions separated by a second groove connected to the first groove and disposed on the first and second lower electrode portions respectively, and an insulation support member filling the first groove, a light emitting device mounted on the first and second upper electrode portions of the mounting substrate, a double phosphor film covering an upper surface of the light emitting device, including a phosphor layer and a barrier layer sequentially stacked on each other, and having a thickness of 200 μm or less, and a sealing member on the mounting substrate covering the light emitting device and the double phosphor film.

公开(公告)号：US11029893B2

公开(公告)日：2021-06-08

申请号：US15970237

申请日：2018-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk Yeon ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F12/10 ,  G06F12/0802 ,  G06F3/16 ,  G11C16/04 ,  G11C7/10 ,  H01L27/11578 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US10891074B2

公开(公告)日：2021-01-12

申请号：US16055203

申请日：2018-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Hwa Lee ,  Young-Ho Park ,  Byung-Ki Lee ,  Hyung-Chul Jang ,  Je-Kyeom Jeon ,  Sung-Kug Cho

IPC: G06F3/06 ,  G06F11/14 ,  G06F16/901 ,  G06F16/23

Abstract: A method of operating a key-value storage device includes a key-value storage device receiving from a host a first command including a first key, a first value, and a first snapshot identification (ID), the key-value storage device generating a first snapshot entry including the first snapshot ID, the first key, and a first physical address in a non-volatile memory device at which the first value is written, in response to the received first command, receiving from the host a second command including the first key, a second value, and a second snapshot ID, and in response to the received second command, the key-value storage device generating a second snapshot entry including the second snapshot ID, the first key, and a second physical address in the non-volatile memory device at which the second value is written.

公开(公告)号：US10089016B2

公开(公告)日：2018-10-02

申请号：US15688939

申请日：2017-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Ho Park ,  Chanik Park

IPC: G11C16/06 ,  G06F3/06 ,  G06F11/10 ,  G11C29/52 ,  G11C16/26 ,  G11C16/34 ,  G11C16/10

Abstract: A method of operating a nonvolatile memory system including a memory device having a plurality of memory blocks includes selecting a source block among the plurality of memory blocks in the nonvolatile memory system, and performing a reclaim operation for the source block based on the number of program and erase cycles which have been performed on the source block.

公开(公告)号：US09977711B2

公开(公告)日：2018-05-22

申请号：US15374506

申请日：2016-12-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Ho Park

IPC: G11C16/26 ,  G06F11/10 ,  G06F3/06 ,  G11C16/34 ,  G11C16/32

CPC classification number: G06F11/1044 ,  G06F3/0608 ,  G06F3/064 ,  G06F3/0679 ,  G11C16/26 ,  G11C16/32 ,  G11C16/349

Abstract: An operation method of a nonvolatile memory system is provided. The method includes selecting a source block of memory blocks, performing a cell-counting with respect to the selected source block based on a reference voltage, and performing a reclaim operation on the source block based on the cell-counting result.

公开(公告)号：US09778851B2

公开(公告)日：2017-10-03

申请号：US15352121

申请日：2016-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Ho Park ,  Chanik Park

IPC: G11C16/06 ,  G06F3/06 ,  G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G06F11/10 ,  G11C29/52

CPC classification number: G06F3/061 ,  G06F3/0614 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F11/1068 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C16/3431 ,  G11C16/3495 ,  G11C29/52 ,  G11C2029/0409 ,  G11C2029/0411

Abstract: A method of operating a nonvolatile memory system including a memory device having a plurality of memory blocks includes selecting a source block among the plurality of memory blocks in the nonvolatile memory system, and performing a reclaim operation for the source block based on the number of program and erase cycles which have been performed on the source block.

公开(公告)号：US10922239B2

公开(公告)日：2021-02-16

申请号：US15857857

申请日：2017-12-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Ho Park ,  Sungkug Cho ,  Byoung Young Ahn

IPC: G06F12/10 ,  G06F12/1009 ,  G06F12/02

Abstract: A storage device includes a controller that receives a value corresponding to data stored in a memory and a key to be referenced to identify the value from a host. In addition, the controller manages partial key-value mapping information indicating a correspondence relationship between a partial key and a value address, and returns information to the host in response to a host request. The information corresponds to a key that includes a same character as a character at a specific position of the received key. The controller to determine the information by determining a partial region of the memory that stores the data based on the partial key-value mapping information and performing a read operation on the partial region to obtain an entire key including the partial key.