公开(公告)号：US20190079702A1

公开(公告)日：2019-03-14

申请号：US15970237

申请日：2018-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk YEON ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/10 ,  H01L27/11578 ,  G11C16/14 ,  G11C16/04

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US12210415B2

公开(公告)日：2025-01-28

申请号：US18131492

申请日：2023-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yang Seok Ki ,  Sungwook Ryu ,  Seontaek Kim ,  Changho Choi ,  Ehsan Najafabadi

IPC: G06F11/14 ,  G06F3/06 ,  G06F11/07 ,  G06F11/10 ,  G06F11/20 ,  G06F11/30 ,  G06F11/32 ,  G06F11/34 ,  G06F12/0882 ,  G06F12/1009

Abstract: A storage device, and a method for operating a storage device. In some embodiments, the storage device includes storage media, and the method includes: determining, by the storage device, that the storage device is in a first fault state from which recovery is possible by power cycling the storage device or by formatting the storage media; determining, by the storage device, that the storage device is in a second fault state from which partial recovery is possible by operating the storage device with reduced performance, with reduced capacity, or in a read-only mode; and operating the storage device with reduced performance, with reduced capacity, or in the read-only mode.

公开(公告)号：US11803446B2

公开(公告)日：2023-10-31

申请号：US17109053

申请日：2020-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yang Seok Ki ,  Sungwook Ryu ,  Seontaek Kim ,  Changho Choi ,  Ehsan Najafabadi

IPC: G06F11/00 ,  G06F11/14 ,  G06F3/06 ,  G06F11/07 ,  G06F11/10 ,  G06F11/20 ,  G06F11/30 ,  G06F11/32 ,  G06F11/34 ,  G06F12/0882 ,  G06F12/1009

CPC classification number: G06F11/1428 ,  G06F3/065 ,  G06F3/0619 ,  G06F3/0634 ,  G06F3/0644 ,  G06F3/0649 ,  G06F3/0673 ,  G06F3/0679 ,  G06F11/0772 ,  G06F11/1068 ,  G06F11/1076 ,  G06F11/1484 ,  G06F11/203 ,  G06F11/2089 ,  G06F11/2094 ,  G06F11/3034 ,  G06F11/3037 ,  G06F11/3072 ,  G06F11/327 ,  G06F11/3409 ,  G06F12/0882 ,  G06F12/1009 ,  G06F2201/85 ,  G06F2212/262

Abstract: A storage device, and a method for operating a storage device. In some embodiments, the storage device includes storage media, and the method includes: determining, by the storage device, that the storage device is in a first fault state from which recovery is possible by power cycling the storage device or by formatting the storage media; determining, by the storage device, that the storage device is in a second fault state from which partial recovery is possible by operating the storage device with reduced performance, with reduced capacity, or in a read-only mode; and operating the storage device with reduced performance, with reduced capacity, or in the read-only mode.

公开(公告)号：US12271266B2

公开(公告)日：2025-04-08

申请号：US18131492

申请日：2023-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yang Seok Ki ,  Sungwook Ryu ,  Seontaek Kim ,  Changho Choi ,  Ehsan Najafabadi

IPC: G06F11/14 ,  G06F3/06 ,  G06F11/07 ,  G06F11/10 ,  G06F11/20 ,  G06F11/30 ,  G06F11/32 ,  G06F11/34 ,  G06F12/0882 ,  G06F12/1009

Abstract: A storage device, and a method for operating a storage device. In some embodiments, the storage device includes storage media, and the method includes: determining, by the storage device, that the storage device is in a first fault state from which recovery is possible by power cycling the storage device or by formatting the storage media; determining, by the storage device, that the storage device is in a second fault state from which partial recovery is possible by operating the storage device with reduced performance, with reduced capacity, or in a read-only mode; and operating the storage device with reduced performance, with reduced capacity, or in the read-only mode.

公开(公告)号：US11029893B2

公开(公告)日：2021-06-08

申请号：US15970237

申请日：2018-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk Yeon ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F12/10 ,  G06F12/0802 ,  G06F3/16 ,  G11C16/04 ,  G11C7/10 ,  H01L27/11578 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US09715465B2

公开(公告)日：2017-07-25

申请号：US14801979

申请日：2015-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seontaek Kim

IPC: G06F13/14 ,  G06F13/16

CPC classification number: G06F13/1642

Abstract: An operating method of a storage device including a nonvolatile memory and a memory controller configured to control the nonvolatile memory may include selecting one of a plurality of submission queues; fetching, from the selected submission queue, a command for accessing the storage device; executing the fetched command; outputting an execution result of the fetched command to a selected completion queue corresponding to the selected submission queue; determining whether a submission queue is a full submission queue, the full submission queue corresponding to a full completion queue; and inhibiting the selecting from selecting the full submission queue until the full completion queue becomes a normal completion queue, when the determining determines a submission queue is the full submission queue, wherein the plurality of submission queues are sequentially selected in accordance with round robin scheduling.

公开(公告)号：US12242761B2

公开(公告)日：2025-03-04

申请号：US18345124

申请日：2023-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk Yeon ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F3/16 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/10 ,  G11C16/04 ,  G11C16/14 ,  H10B43/20 ,  G11C16/10 ,  G11C16/26

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US11693605B2

公开(公告)日：2023-07-04

申请号：US17307309

申请日：2021-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk Yeon ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F12/10 ,  G06F12/0802 ,  G06F3/16 ,  G11C16/04 ,  G11C7/10 ,  G11C16/14 ,  H10B43/20 ,  G11C16/26 ,  G11C16/10

CPC classification number: G06F3/0679 ,  G06F3/061 ,  G06F3/064 ,  G06F3/0611 ,  G06F3/0629 ,  G06F3/0659 ,  G06F3/0688 ,  G06F3/167 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/1015 ,  G11C7/1084 ,  G11C16/04 ,  G11C16/14 ,  H10B43/20 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US10824564B2

公开(公告)日：2020-11-03

申请号：US16007667

申请日：2018-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yu-hun Jun ,  Sil Wan Chang ,  Heechul Chae ,  Seontaek Kim ,  In Hwan Doh

IPC: G06F12/08 ,  G06F12/0811 ,  G06F3/06

Abstract: An operation method of a memory controller which is configured to control a nonvolatile memory device includes receiving a command from the outside, calculating a delay time based on a currently available write buffer, a previously available write buffer, and a reference value, and processing the command based on the delay time.