Semiconductor device
    3.
    发明授权

    公开(公告)号:US09825024B2

    公开(公告)日:2017-11-21

    申请号:US14870141

    申请日:2015-09-30

    Inventor: Jong-Hoon Jung

    Abstract: A semiconductor device is provided. The semiconductor device includes an active region, a gate line, a first metal interconnect, a power rail, and a second metal interconnect. The gate line overlaps the active region and extends along a first direction. The first metal interconnect overlaps the active region and the gate line. The first metal interconnect extends along a second direction intersecting the first direction. The power rail is disposed in a higher layer than the first metal interconnect. The power rail extends along the second direction. The second metal interconnect is disposed in a same layer as the power rail, the second metal interconnect extends along the second direction.

    INTEGRATED CIRCUIT INCLUDING CLUBFOOT STRUCTURE CONDUCTIVE PATTERNS

    公开(公告)号:US20190355750A1

    公开(公告)日:2019-11-21

    申请号:US16409129

    申请日:2019-05-10

    Abstract: An integrated circuit includes a standard cell. The standard cell may include a plurality of gate lines and a plurality of first wirings. The plurality of first wirings may include a clubfoot structure conductive pattern that includes a first conductive pattern and a second conductive pattern spaced apart from each other. Each of the first conductive pattern and the second conductive pattern may include a first line pattern extending in a first direction and a second line pattern protruding from one end of the first line pattern in a direction perpendicular to the first direction. The plurality of gate lines may be spaced apart from each other by a first pitch in the first direction, and the plurality of second wirings may be spaced apart from each other by a second pitch in the first direction. The first pitch may be greater than the second pitch.

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