公开(公告)号：US20240224487A1

公开(公告)日：2024-07-04

申请号：US18604195

申请日：2024-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KI-IL KIM ,  Jung-gun YOU ,  Gi-gwan PARK

IPC: H10B10/00 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/105 ,  H01L29/78

CPC classification number: H10B10/12 ,  H01L21/823821 ,  H01L27/0924 ,  H01L27/105 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854

Abstract: A semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. The fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. A third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.

公开(公告)号：US20240072060A1

公开(公告)日：2024-02-29

申请号：US18499258

申请日：2023-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： BYOUNGHAK HONG ,  SEUNGHYUN SONG ,  KI-IL KIM ,  GUNHO JO ,  KANG-ILL SEO

IPC: H01L27/12 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/088

CPC classification number: H01L27/1203 ,  H01L21/8221 ,  H01L21/823412 ,  H01L21/823456 ,  H01L21/84 ,  H01L27/088

Abstract: Nanosheet transistor devices are provided. A nanosheet transistor device includes a transistor stack that includes a lower nanosheet transistor having a first nanosheet width and a lower gate width. The transistor stack also includes an upper nanosheet transistor that is on the lower nanosheet transistor and that has a second nanosheet width and an upper gate width that are different from the first nanosheet width and the lower gate width, respectively. Related methods of forming a nanosheet transistor device are also provided.

公开(公告)号：US20220367520A1

公开(公告)日：2022-11-17

申请号：US17380999

申请日：2021-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： BYOUNGHAK HONG ,  SEUNGHYUN SONG ,  KI-IL KIM ,  GUNHO JO ,  KANG-ILL SEO

IPC: H01L27/12 ,  H01L27/088 ,  H01L21/84 ,  H01L21/822 ,  H01L21/8234

Abstract: Nanosheet transistor devices are provided. A nanosheet transistor device includes a transistor stack that includes a lower nanosheet transistor having a first nanosheet width and a lower gate width. The transistor stack also includes an upper nanosheet transistor that is on the lower nanosheet transistor and that has a second nanosheet width and an upper gate width that are different from the first nanosheet width and the lower gate width, respectively. Related methods of forming a nanosheet transistor device are also provided.

公开(公告)号：US20250104967A1

公开(公告)日：2025-03-27

申请号：US18596976

申请日：2024-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHANGBAE PARK ,  KI-IL KIM ,  Jae Sik AN ,  SUNTAEK LIM

IPC: H01J37/32 ,  H01L21/3065

Abstract: Disclosed are substrate processing apparatuses and substrate processing methods using the same. The substrate processing apparatus comprises a process chamber that provides a process space; a stage that supports a substrate, a gas spray device in the process space and upwardly spaced apart from the stage, a dielectric layer in the process space and upwardly spaced apart from the stage, a piezoelectric element that has a connection with and vibrates the dielectric layer, and a piezo power source that supplies the piezoelectric element with an alternating electric power.

公开(公告)号：US20240170486A1

公开(公告)日：2024-05-23

申请号：US18425476

申请日：2024-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONGHYUK YIM ,  KI-IL KIM ,  GIL HWAN SON ,  KANG ILL SEO

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/0922 ,  H01L21/82385 ,  H01L21/823857 ,  H01L21/823871 ,  H01L29/0665 ,  H01L29/401 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/78645

Abstract: Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.

公开(公告)号：US20220375935A1

公开(公告)日：2022-11-24

申请号：US17387178

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： JEONGHYUK YIM ,  KI-IL KIM ,  GIL HWAN SON ,  KANG ILL SEO

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L29/786 ,  H01L21/8238

Abstract: Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.