SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

    公开(公告)号:US20240310739A1

    公开(公告)日:2024-09-19

    申请号:US18436127

    申请日:2024-02-08

    CPC classification number: G03F7/70725 G03F7/2043 G03F7/70808

    Abstract: A substrate processing apparatus includes a substrate stage configured to support a semiconductor substrate, the substrate stage being rotatable at a predetermined angular velocity, and a discharge device above the substrate stage, the discharge device being configured to discharge a chemical solution onto the semiconductor substrate, and the discharge device including a nozzle arm movable along a radial direction from a central region of the substrate stage to a peripheral region surrounding the central region, a nozzle on the nozzle arm, the nozzle facing the substrate stage, and the nozzle being configured to discharge the chemical solution onto the semiconductor substrate at a predetermined angle relative to a surface of the semiconductor substrate, and an angle changer configured to change the predetermined angle such that the predetermined angle gradually decreases as the nozzle arm moves from the central region to the peripheral region.

    CHEMICAL LIQUID CIRCULATION APPARATUS, CHEMICAL LIQUID DISPENSING APPARATUS, AND CHEMICAL LIQUID SUPPLY SYSTEM HAVING THE SAME

    公开(公告)号:US20220187721A1

    公开(公告)日:2022-06-16

    申请号:US17465605

    申请日:2021-09-02

    Abstract: A chemical liquid supply system includes a chemical liquid tank including an inlet allowing a chemical fluid to be introduced therethrough, an opening allowing the chemical liquid introduced through the inlet to be temporarily stored, and an outlet allowing the chemical liquid stored in the opening to flow out therethrough, a chemical liquid circulation apparatus including a supply flow path supplying the chemical liquid to the inlet and a recovery flow path resupplying the chemical liquid collected from the outlet to the supply flow path, a chemical liquid supply source supplying the chemical liquid to the supply flow path of the chemical liquid circulation apparatus, and a chemical liquid dispensing apparatus configured to move to the opening and draw the chemical liquid from the opening, move to a substrate to be treated and discharge the chemical liquid onto the substrate.

    SUBSTRATE SUPPORTING MEMBER AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME

    公开(公告)号:US20250031281A1

    公开(公告)日:2025-01-23

    申请号:US18389721

    申请日:2023-12-19

    Abstract: A substrate supporting member and a substrate processing apparatus including the same are provided. The substrate supporting member includes a plate having at least one heating zone. A heating member is on a first surface of the plate and located in the at least one heating zone. The heating member extends along a circumferential direction of the plate and is configured to heat a substrate supported by the plate. A first electrode is on the first surface of the plate and is connected to an inner side surface of the heating member. A second electrode is on the first surface of the plate and is connected to an outer side surface of the heating member. The heating member has a stair-step configuration such that a thickness of the heating member increases from the second electrode toward the first electrode.

    PLASMA PROCESS APPARATUS
    4.
    发明公开

    公开(公告)号:US20240212980A1

    公开(公告)日:2024-06-27

    申请号:US18217889

    申请日:2023-07-03

    Abstract: Provided a plasma process apparatus including a chamber including a plasma processing space, a substrate stage included in the chamber, the substrate stage including a seating surface, a target including deposition particles to be deposited on the substrate, a gas supplier configured to supply gas into the chamber, a plasma generator configured to generate plasma from the gas, the plasma generator configured to deposit the deposition particles on the substrate through the plasma, at least one permanent magnet on the target being rotatable and configured to distribute the plasma on the target through a magnetic field, and a coil assembly on an outer wall of the chamber and assembly including first through third side coils inclined and being configured to generate first through third vectors, respectively, and the coil assembly being configured to generate a magnetic field vector guiding the plasma through a combination of the first through third vectors.

    POLISHING HEAD AND POLISHING CARRIER APPARATUS HAVING THE SAME

    公开(公告)号:US20250135600A1

    公开(公告)日:2025-05-01

    申请号:US18906603

    申请日:2024-10-04

    Abstract: A polishing head may include a substrate carrier detachably secured to a driving shaft and to pressurize and rotate a substrate, the substrate carrier includes a flexible membrane, wherein the flexible membrane includes a main thin film having a first surface to be in contact with the substrate and a second surface opposite to the first surface and a plurality of vertical thin films extending from the main thin film in a vertical direction to define a plurality of pressurizing chambers that are divided along a radial direction about a central axis; a plurality of temperature elements disposed under the plurality of pressurizing chambers in the main thin film and configured to apply local heat to the substrate; and a plurality of pressure elements respectively disposed on the plurality of temperature elements in the main thin film and configured to apply local pressure to the main thin film.

    PHOTORESIST COATING APPARATUS
    6.
    发明公开

    公开(公告)号:US20240213055A1

    公开(公告)日:2024-06-27

    申请号:US18524164

    申请日:2023-11-30

    CPC classification number: H01L21/6715 G03F7/162 H01L21/67051 H01L21/67225

    Abstract: A photoresist coating apparatus includes a photoresist trap tank temporarily storing a photoresist. A photoresist supply pipe is connected to the photoresist trap tank. A pump is connected to the photoresist supply pipe. A photoresist pressing device is connected to the photoresist supply pipe at a rear of the pump. A photoresist circulation pipe is at a rear of the photoresist pressing device. The photoresist circulation pipe connects the photoresist supply pipe to the photoresist trap tank. A photoresist discharge pipe is connected to the photoresist supply pipe at a rear of the photoresist circulation pipe. A photoresist discharge valve is connected to the photoresist discharge pipe. A photoresist discharge nozzle is connected to the photoresist discharge valve.

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