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公开(公告)号:US20210240667A1
公开(公告)日:2021-08-05
申请号:US17236416
申请日:2021-04-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyung Ho KIM , Seungyeun JEONG , Dae-Jin KIM , Sang-Jin OH , Hwasoo LEE , Hyejeong JANG
Abstract: A trim management method for a storage device includes activating, by a processor configured by an application program, a pattern check function of a device driver, requesting, by the processor configured by the application program, a file system to write a file of a specified pattern, converting, by the processor configured by the file system, the file to management unit data of the storage device, transmitting, by the processor configured by the file system, the management unit data to the device driver, checking, by the processor configured by the device driver, whether a data pattern of the management unit data is the same as the specified pattern, and transmitting, by the processor configured by the device driver, a trim command for trimming a storage area corresponding to the management unit data, to the storage device based on results of the checking.
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公开(公告)号:US20170345911A1
公开(公告)日:2017-11-30
申请号:US15479459
申请日:2017-04-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyun Kwan YU , Kyung Ho KIM , Dong Suk SHIN
IPC: H01L29/49 , H01L29/66 , H01L29/165 , H01L29/161 , H01L29/06 , H01L29/08 , H01L21/8238 , H01L27/11 , H01L27/092 , H01L29/78 , H01L29/16
CPC classification number: H01L29/4983 , H01L21/823418 , H01L21/823431 , H01L21/823468 , H01L21/823814 , H01L21/823821 , H01L21/823864 , H01L21/823878 , H01L27/0886 , H01L27/0924 , H01L27/1104 , H01L29/0649 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/66545 , H01L29/7848 , H01L29/785
Abstract: A semiconductor device includes a field insulating film including a first region and a second region on a substrate, a recess in the first region of the field insulating film, a gate electrode on the second region of the field insulating film, and a gate spacer along a sidewall of the gate electrode and a sidewall of the recess.
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公开(公告)号:US20230387206A1
公开(公告)日:2023-11-30
申请号:US18117262
申请日:2023-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ki Hwan KIM , Kyung Ho KIM , Kang Hun MOON , Cho Eun LEE , Yong Uk JEON
IPC: H01L29/08 , H01L27/092 , H01L29/06 , H01L29/423 , H01L29/49 , H01L29/775 , H01L29/66
CPC classification number: H01L29/0847 , H01L27/092 , H01L29/0673 , H01L29/42392 , H01L29/4991 , H01L29/775 , H01L29/66545 , H01L29/66439
Abstract: A semiconductor device comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a plurality of gate structures disposed on the lower pattern to be spaced apart from each other in a second direction, each of the gate structures including a gate electrode and gate insulating films, source/drain recesses defined between adjacent gate structures and a source/drain pattern filling the source/drain recesses. Each source/drain pattern may include a first semiconductor liner, which extend along sidewalls and a bottom surface of the source/drain recesses, second semiconductor liners, which are on the first semiconductor liners and extend along the sidewalls and the bottom surface of the source/drain recesses, and a filling semiconductor film, which is on the second semiconductor liners and fills the source/drain recess. The second semiconductor liners may be doped with carbon, and the first semiconductor liners may be in contact with the lower pattern and the sheet patterns, while the first semiconductor liners may include carbon-undoped regions.
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公开(公告)号:US20210357319A1
公开(公告)日:2021-11-18
申请号:US17386782
申请日:2021-07-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sangkwon MOON , Kyung Ho KIM , Seunguk SHIN , Sung WON JUNG
IPC: G06F12/02
Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.
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公开(公告)号:US20210255780A1
公开(公告)日:2021-08-19
申请号:US17307098
申请日:2021-05-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyung-San KIM , Kyung Ho KIM , Seokhwan KIM , Seunguk SHIN , Jihyun LIM
Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the IO request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.
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公开(公告)号:US20180032403A1
公开(公告)日:2018-02-01
申请号:US15726375
申请日:2017-10-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yang YU , Chang-Eun CHOI , Kyung Ho KIM , Walter JUN , Wonchuri ZOO , Robert BRENNAN
CPC classification number: G06F11/1417 , G06F11/1004 , G06F11/1666 , G06F11/20
Abstract: Embodiments of the inventive concept include computer-implemented method for shadowing one or more boot images of a mobile device. The technique can include duplicating boot images to shadow partitions in a user area of a non-volatile memory device such as a flash memory. The technique can include detecting boot image corruption, and causing a mobile device to boot from the shadow partitions. The technique can include dynamically shadowing and releasing blocks used by the shadow partitions. The technique can include boot failure recovery and bad image preservation through firmware flash translation layer (FTL) logical to physical mapping updates. Boot image corruption failures can be recovered from and/or debugged using the shadow partitions.
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公开(公告)号:US20160254613A1
公开(公告)日:2016-09-01
申请号:US15047069
申请日:2016-02-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang Wook CHOI , Kyung Ho KIM , Sung Yub KIM , Han Eol PARK , Jeong In LEE , Jae Young CHANG
IPC: H01R13/58
CPC classification number: H01R13/5829 , G06F1/1632 , H01R13/58 , H01R13/6315 , H01R31/065 , H02J7/0044 , H02J7/0052 , H02J2007/0062 , H04M1/04
Abstract: A connector module may include: a connector body including an interior space with an empty area therein; and a connector part disposed on one side of the connector body. The connector part may include: a connector protruding from the connector body; and a connector holder seated in the empty area of the connector body and configured to secure the connector thereto. The connector holder may be configured to move the connector in one direction in response to an external force. A fixing part may be connected to one side of the connector body in a hinged fashion and being rotatable relative to the connector.
Abstract translation: 连接器模块可以包括:连接器主体,其包括其中具有空区域的内部空间; 以及设置在连接器主体的一侧的连接器部。 连接器部件可以包括:从连接器主体突出的连接器; 以及连接器支架,其位于连接器主体的空的区域中,并被配置为将连接器固定到其上。 连接器保持器可以被配置成响应于外力沿一个方向移动连接器。 固定部件可以铰接方式连接到连接器主体的一侧,并且可相对于连接器旋转。
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8.
公开(公告)号:US20130281872A1
公开(公告)日:2013-10-24
申请号:US13922611
申请日:2013-06-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang Hoon SHIN , Sun Gi HONG , Kyung Ho KIM , Wan Taek HAN
CPC classification number: A61B5/08 , A61B5/0878 , A61B5/486 , A61B5/7405 , A61B5/742 , A61B7/003
Abstract: A system, medium, and method conducing a user's breathing, in which a sound generated during a user's exhale and/or an ambient temperature change occurring during the exhale is sensed to measure a respiratory waveform of the user. Respiratory information of the user may then be produced from the respiratory waveform, and when the respiratory information of the user is different from normal respiratory information of the user, breathing information according to the normal respiratory information may be provided to the user so the user can use the same to modify their breathing.
Abstract translation: 感测用户呼吸期间产生的声音和/或在呼出期间发生的环境温度变化的声音的系统,介质和方法,以测量用户的呼吸波形。 然后可以从呼吸波形产生用户的呼吸信息,并且当用户的呼吸信息不同于用户的正常呼吸信息时,可以向用户提供根据正常呼吸信息的呼吸信息,以便用户可以 使用相同的方式修改呼吸。
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公开(公告)号:US20200278926A1
公开(公告)日:2020-09-03
申请号:US16877802
申请日:2020-05-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sangkwon MOON , Kyung Ho KIM , Seunguk SHIN , Sung WON JUNG
IPC: G06F12/02
Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.
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公开(公告)号:US20190207008A1
公开(公告)日:2019-07-04
申请号:US16294158
申请日:2019-03-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyun Kwan YU , Kyung Ho KIM , Dong Suk SHIN
IPC: H01L29/49 , H01L21/8234 , H01L29/165 , H01L21/8238 , H01L29/78 , H01L29/66 , H01L29/16 , H01L29/161 , H01L29/08 , H01L29/06 , H01L27/11 , H01L27/088
CPC classification number: H01L29/4983 , H01L21/823418 , H01L21/823431 , H01L21/823468 , H01L21/823814 , H01L21/823821 , H01L21/823864 , H01L21/823878 , H01L27/0886 , H01L27/0924 , H01L27/1104 , H01L29/0649 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/66545 , H01L29/7848 , H01L29/785
Abstract: A semiconductor device includes a field insulating film including a first region and a second region on a substrate, a recess in the first region of the field insulating film, a gate electrode on the second region of the field insulating film, and a gate spacer along a sidewall of the gate electrode and a sidewall of the recess.
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