公开(公告)号：US09960169B2

公开(公告)日：2018-05-01

申请号：US15243248

申请日：2016-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Seok Lee ,  Byoung-Ho Kwon ,  Sang-Kyun Kim ,  Yun-Jeong Kim ,  Seung-Ho Park ,  Hao Cui ,  In-Seak Hwang

IPC: H01L27/108 ,  H01L21/762 ,  H01L21/3105

CPC classification number: H01L27/10873 ,  H01L21/0337 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76224 ,  H01L21/76229 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10894

Abstract: In a method of manufacturing a semiconductor device, mask patterns are formed on a semiconductor substrate. An organic layer is formed on the semiconductor substrate to cover the mask patterns. An upper portion of the organic layer is planarized using a polishing composition. The polishing composition includes an oxidizing agent and is devoid of abrasive particles.

公开(公告)号：US20170062437A1

公开(公告)日：2017-03-02

申请号：US15243248

申请日：2016-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Seok Lee ,  Byoung-Ho Kwon ,  Sang-Kyun Kim ,  Yun-Jeong Kim ,  Seung-Ho Park ,  Hao Cui ,  ln-Seak Hwang

IPC: H01L27/108 ,  H01L21/3105 ,  H01L21/762

CPC classification number: H01L27/10873 ,  H01L21/0337 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76224 ,  H01L21/76229 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10894

Abstract: In a method of manufacturing a semiconductor device, mask patterns are formed on a semiconductor substrate. An organic layer is formed on the semiconductor substrate to cover the mask patterns. An upper portion of the organic layer is planarized using a polishing composition. The polishing composition includes an oxidizing agent and is devoid of abrasive particles.

Abstract translation: 在制造半导体器件的方法中，在半导体衬底上形成掩模图案。 在半导体衬底上形成有机层以覆盖掩模图案。 使用抛光组合物对有机层的上部进行平面化处理。 抛光组合物包括氧化剂并且没有磨料颗粒。

公开(公告)号：US09845444B2

公开(公告)日：2017-12-19

申请号：US14942206

申请日：2015-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ahn-Ho Lee ,  Chung-Kyung Jung ,  Dong-Min Kang ,  Dong-Hun Kang ,  Go-Un Kim ,  Dong-Jin Kim ,  Yong-Sik Yoo ,  Young-Chul Jung ,  Yu-Ri Jung ,  Jung-Min Choi ,  Sang-Kyun Kim

IPC: C11D7/50 ,  C11D1/00 ,  C11D3/20 ,  C11D3/30 ,  C11D11/00 ,  C11D1/66 ,  C11D1/72 ,  C11D3/28 ,  C11D3/43

CPC classification number: C11D1/008 ,  C11D1/662 ,  C11D1/667 ,  C11D1/72 ,  C11D3/2079 ,  C11D3/28 ,  C11D3/30 ,  C11D3/43 ,  C11D11/0047

Abstract: A cleaning composition includes an organic solvent, an organic acid, a chelating agent, a surfactant containing at least one hydroxyl group (OH) at the end, and an ultra pure water, wherein a pH value of the cleaning composition is equal to or higher than 12.

公开(公告)号：US10435587B2

公开(公告)日：2019-10-08

申请号：US15214847

申请日：2016-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Ho Park ,  Ki-Hwa Jung ,  Sang-Kyun Kim ,  Jun-Ha Hwang ,  Chang-Gil Kwon ,  Seung-Yeop Baek ,  Jae-Woo Lee ,  Ji-Sung Lee ,  Jae-Kwang Choi ,  Jin-Myung Hwang

IPC: H01L21/31 ,  H01L21/76 ,  H01L21/82 ,  C09G1/02 ,  H01L21/762 ,  H01L29/06 ,  H01L21/3105 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/66

Abstract: A polishing composition includes abrasive particles, a pyrrolidone containing a hydrophilic group, a dispersing agent, a first dishing inhibitor including polyacrylic acid, and a second dishing inhibitor including a non-ionic polymer.