Abstract:
Method of manufacturing a semiconductor light emitting device package are described. Semiconductor light emitting device packages includes may be formed by forming a plurality of light emitting diode chips having a structure in which a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially stacked on a wafer, forming a phosphor layer and an encapsulation layer on the first conductivity-type semiconductor layer, forming a texture on the encapsulation layer by removing a portion of the encapsulation layer from an upper surface thereof; and separating the plurality of light emitting diode chips from each other.
Abstract:
A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more.