METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE
    1.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE 审中-公开
    制造半导体发光器件封装的方法

    公开(公告)号:US20160308089A1

    公开(公告)日:2016-10-20

    申请号:US14993066

    申请日:2016-01-11

    Abstract: Method of manufacturing a semiconductor light emitting device package are described. Semiconductor light emitting device packages includes may be formed by forming a plurality of light emitting diode chips having a structure in which a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially stacked on a wafer, forming a phosphor layer and an encapsulation layer on the first conductivity-type semiconductor layer, forming a texture on the encapsulation layer by removing a portion of the encapsulation layer from an upper surface thereof; and separating the plurality of light emitting diode chips from each other.

    Abstract translation: 描述制造半导体发光器件封装的方法。 半导体发光器件封装可以通过形成多个具有第一导电型半导体层,有源层和第二导电类型半导体层依次层叠在晶片上的结构的发光二极管芯片形成, 在所述第一导电型半导体层上形成荧光体层和封装层,通过从其上表面去除所述封装层的一部分,在所述封装层上形成纹理; 以及将所述多个发光二极管芯片彼此分离。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    2.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号:US20160372636A1

    公开(公告)日:2016-12-22

    申请号:US15171087

    申请日:2016-06-02

    Abstract: A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more.

    Abstract translation: 一种半导体发光器件包括:发光层,包括第一导电型半导体层,第二导电型半导体层和设置在第一导电型半导体层和第二导电类型半导体层之间的有源层 设置在所述发光叠层上并被配置为将从所述有源层发射的具有第一波长的至少一些光转换为具有第二波长的光的波长转换层,以及设置在所述发光层之间的光控制层 并且包括第一绝缘层和第二绝缘层,所述第一绝缘层的折射率低于所述发光叠层的折射率,所述第二绝缘层的折射率高于 第一绝缘层的折射率为0.5以上。

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