公开(公告)号：US20180374825A1

公开(公告)日：2018-12-27

申请号：US16114795

申请日：2018-08-28

申请人： Samsung Electronics Co., Ltd.

发明人： Sun-kyoung SEO ,  Cha-jea JO ,  Soo-hyun HA

IPC分类号： H01L25/065 ,  H01L23/31 ,  H01L23/532

CPC分类号： H01L25/0657 ,  H01L23/3185 ,  H01L23/53238 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06582

摘要： A semiconductor package includes: a first semiconductor chip in which a through-electrode is provided; a second semiconductor chip connected to a top surface of the first semiconductor chip; a first connection bump attached to a bottom surface of the first semiconductor chip and including a first pillar structure and a first solder layer; and a second connection bump located between the first semiconductor chip and the second semiconductor chip, configured to electrically connect the first semiconductor chip and the second semiconductor chip, and including a second pillar structure and a second solder layer.

公开(公告)号：US20170229412A1

公开(公告)日：2017-08-10

申请号：US15494942

申请日：2017-04-24

申请人： Samsung Electronics Co., Ltd.

发明人： Sun-kyoung SEO ,  Seung-kwan RYU ,  Cha-jea JO ,  Tae-Je CHO

IPC分类号： H01L23/00 ,  H01L23/48 ,  H01L25/065

CPC分类号： H01L24/14 ,  H01L23/481 ,  H01L23/562 ,  H01L24/11 ,  H01L24/13 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13026 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/1415 ,  H01L2224/14181 ,  H01L2224/14519 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/17519 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06565 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/00014

摘要： The semiconductor chip including a semiconductor device layer including a pad region and a cell region, a plurality of uppermost wirings formed on the semiconductor device layer to be arranged at an equal distance in the cell region, a passivation layer formed in the cell region and the pad region, and a plurality of thermal bumps disposed on the passivation layer to be electrically insulated from the plurality of uppermost wirings may be provided. The semiconductor device layer may include a plurality of through silicon via (TSV) structures in the pad region. The plurality of uppermost wirings may extend in parallel along one direction and have a same width. The passivation layer may cover at least a top surface of the plurality of uppermost wirings in the cell region and includes a top surface having a wave shape.

公开(公告)号：US20200286862A1

公开(公告)日：2020-09-10

申请号：US16881767

申请日：2020-05-22

申请人： Samsung Electronics Co., Ltd.

发明人： Sun-kyoung SEO ,  Cha-jea JO ,  Soo-hyun HA

IPC分类号： H01L25/065 ,  H01L23/31 ,  H01L23/532

摘要： A semiconductor package includes a first semiconductor chip in which a through-electrode is provided, a second semiconductor chip connected to a top surface of the first semiconductor chip, a first connection bump attached to a bottom surface of the first semiconductor chip and including a first pillar structure and a first solder layer, and a second connection bump located between the first semiconductor chip and the second semiconductor chip, configured to electrically connect the first semiconductor chip and the second semiconductor chip, and including a second pillar structure and a second solder layer.

公开(公告)号：US20190312013A1

公开(公告)日：2019-10-10

申请号：US16448703

申请日：2019-06-21

申请人： Samsung Electronics Co., Ltd.

发明人： Sun-kyoung SEO ,  Cha-jea JO ,  Soo-hyun HA

IPC分类号： H01L25/065 ,  H01L23/532 ,  H01L23/31

摘要： A semiconductor package includes: a first semiconductor chip in which a through-electrode is provided; a second semiconductor chip connected to a top surface of the first semiconductor chip; a first connection bump attached to a bottom surface of the first semiconductor chip and including a first pillar structure and a first solder layer, and a second connection hump located between the first semiconductor chip and the second semiconductor chip, configured to electrically connect the first semiconductor chip and the second semiconductor chip, and including a second pillar structure and a second solder layer.

公开(公告)号：US20170170136A1

公开(公告)日：2017-06-15

申请号：US15236814

申请日：2016-08-15

申请人： Samsung Electronics Co., Ltd.

发明人： Sun-kyoung SEO ,  Seung-kwan RYU ,  Cha-jea JO ,  Tae-Je CHO

IPC分类号： H01L23/00 ,  H01L25/00 ,  H01L21/768 ,  H01L23/48 ,  H01L25/065

CPC分类号： H01L24/14 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13026 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/1415 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/17519 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06565 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/00014

摘要： The semiconductor chip including a semiconductor device layer including a pad region and a cell region, a plurality of uppermost wirings formed on the semiconductor device layer to be arranged at an equal distance in the cell region, a passivation layer formed in the cell region and the pad region, and a plurality of thermal bumps disposed on the passivation layer to be electrically insulated from the plurality of uppermost wirings may be provided. The semiconductor device layer may include a plurality of through silicon via (TSV) structures in the pad region. The plurality of uppermost wirings may extend in parallel along one direction and have a same width. The passivation layer may cover at least a top surface of the plurality of uppermost wirings in the cell region and includes a top surface having a wave shape.

公开(公告)号：US20210217735A1

公开(公告)日：2021-07-15

申请号：US17213715

申请日：2021-03-26

申请人： Samsung Electronics Co., Ltd.

发明人： Sun-kyoung SEO ,  Cha-jea JO ,  Soo-hyun HA

IPC分类号： H01L25/065 ,  H01L23/31 ,  H01L23/532

摘要： A semiconductor package includes a first semiconductor chip in which a through-electrode is provided, a second semiconductor chip connected to a top surface of the first semiconductor chip, a first connection bump attached to a bottom surface of the first semiconductor chip and including a first pillar structure and a first solder layer, and a second connection bump located between the first semiconductor chip and the second semiconductor chip, configured to electrically connect the first semiconductor chip and the second semiconductor chip, and including a second pillar structure and a second solder layer.

公开(公告)号：US20200243488A1

公开(公告)日：2020-07-30

申请号：US16847987

申请日：2020-04-14

申请人： Samsung Electronics Co., Ltd.

发明人： Sun-kyoung SEO ,  Cha-jea JO ,  Soo-hyun HA

IPC分类号： H01L25/065 ,  H01L23/532 ,  H01L23/31

摘要： A semiconductor package includes: a first semiconductor chip in which a through-electrode is provided; a second semiconductor chip connected to a top surface of the first semiconductor chip; a first connection bump attached to a bottom surface of the first semiconductor chip and including a first pillar structure and a first solder layer, and a second connection hump located between the first semiconductor chip and the second semiconductor chip, configured to electrically connect the first semiconductor chip and the second semiconductor chip, and including a second pillar structure and a second solder layer.

公开(公告)号：US20170338206A1

公开(公告)日：2017-11-23

申请号：US15421386

申请日：2017-01-31

申请人： Samsung Electronics Co., Ltd.

发明人： Sun-kyoung SEO ,  Cha-jea JO ,  Soo-hyun HA

IPC分类号： H01L25/065 ,  H01L23/31 ,  H01L23/532

CPC分类号： H01L25/0657 ,  H01L23/3185 ,  H01L23/53238 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06582

摘要： A semiconductor package includes: a first semiconductor chip in which a through-electrode is provided; a second semiconductor chip connected to a top surface of the first semiconductor chip; a first connection bump attached to a bottom surface of the first semiconductor chip and including a first pillar structure and a first solder layer; and a second connection bump located between the first semiconductor chip and the second semiconductor chip, configured to electrically connect the first semiconductor chip and the second semiconductor chip, and including a second pillar structure and a second solder layer.