公开(公告)号：US20200091279A1

公开(公告)日：2020-03-19

申请号：US16361469

申请日：2019-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-min MOON ,  Su-hwan KIM ,  Hyun-jun KIM ,  Seong-yul PARK ,  Young-lim PARK ,  Jae-wan CHANG

IPC: H01L49/02 ,  H01L21/311 ,  H01L21/285 ,  H01L21/321 ,  H01L21/02

Abstract: In a capacitor of an integrated circuit, a crystallization induction film is obtained by oxidizing a surface of an electrode, and a dielectric structure is formed on the crystallization induction film, to reduce defect density generated in the dielectric film, improve leakage current, and reduce equivalent oxide thickness.

公开(公告)号：US20210140048A1

公开(公告)日：2021-05-13

申请号：US17153281

申请日：2021-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-min MOON ,  Youn-soo KIM ,  Han-jin LIM ,  Yong-jae LEE ,  Se-hoon OH ,  Hyun-jun KIM ,  Jin-sun LEE

IPC: C23C16/52 ,  H01J37/32 ,  C23C16/455 ,  H01L21/67

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

公开(公告)号：US20170040172A1

公开(公告)日：2017-02-09

申请号：US15227089

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-min MOON ,  Youn-soo KIM ,  Han-jin LIM ,  Yong-jae LEE ,  Se-hoon OH ,  Hyun-jun KIM ,  Jin-sun LEE

IPC: H01L21/28 ,  C23C16/50 ,  H01L29/40 ,  C23C16/455

CPC classification number: H01L21/28008 ,  C23C16/045 ,  C23C16/405 ,  C23C16/4408 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/45561 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/28282 ,  H01L27/10852 ,  H01L27/10879 ,  H01L27/11582 ,  H01L28/40 ,  H01L29/401 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

Abstract translation: 形成材料层的方法包括将基底提供到反应室中，将源材料提供到基底上，源材料是具有配体的金属或半金属的前体，在基底上提供醚基改性剂，清洗 反应室的内部，并使反应材料与源材料反应以形成材料层。

公开(公告)号：US20190165088A1

公开(公告)日：2019-05-30

申请号：US16003675

申请日：2018-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-ho CHO ,  Sang-yeol KANG ,  Sun-min MOON ,  Young-lim PARK ,  Jong-born SEO

IPC: H01L49/02 ,  H01L29/06 ,  H01L21/02

Abstract: A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.

公开(公告)号：US20170211183A1

公开(公告)日：2017-07-27

申请号：US15482005

申请日：2017-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-min MOON ,  Youn-soo KIM ,  Han-jin LIM ,  Yong-jae LEE ,  Se-hoon OH ,  Hyun-jun KIM ,  Jin-sun LEE

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/28 ,  H01L27/11582 ,  H01L21/02 ,  H01L27/108

CPC classification number: H01L21/28008 ,  C23C16/045 ,  C23C16/405 ,  C23C16/4408 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/45561 ,  H01L21/02189 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L27/10852 ,  H01L27/10879 ,  H01L27/11582 ,  H01L29/401 ,  H01L29/40117 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.