公开(公告)号：US20180053674A1

公开(公告)日：2018-02-22

申请号：US15469620

申请日：2017-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyun LEE ,  Sangdong KWON ,  Tae-Hwa KIM ,  Minjoon PARK

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6831 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/68757

Abstract: Disclosed are an electrostatic chuck assembly and a substrate processing apparatus including the same. The substrate processing apparatus comprises a process chamber including an inner space therein, a gas supply unit supplying a process gas into the process chamber, a top electrode section in the process chamber and generating plasma from the process gas, and an electrostatic chuck assembly below the top electrode section in the process chamber. The electrostatic chuck assembly comprises an electrostatic chuck supporting a substrate, a focus ring surrounding an upper portion of the electrostatic chuck, an electrode ring below the focus ring and including a different material from the focus ring, and a brazed bonding layer brazing the focus ring and the electrode ring together, the brazed bonding layer being between the focus ring and the electrode ring.

公开(公告)号：US20160027652A1

公开(公告)日：2016-01-28

申请号：US14678491

申请日：2015-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmin JEON ,  Kyung-Sun KIM ,  DOUGYONG SUNG ,  Tae-Hwa KIM ,  Heungsik PARK ,  Jung Min KIM

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32889 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11582

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

公开(公告)号：US20240120177A1

公开(公告)日：2024-04-11

申请号：US18370268

申请日：2023-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Mo LEE ,  Dong Hyeon NA ,  Myeong Soo SHIN ,  Woong Jin CHEON ,  Kyung-Sun KIM ,  Jae Bin KIM ,  Tae-Hwa KIM ,  Seung Bo SHIM

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32174 ,  H01J37/32669 ,  H01L21/3065 ,  H01J2237/334

Abstract: A substrate processing method is provided. The substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, and the first DC pulse signal has a second level different from the first level during the second section.

公开(公告)号：US20170110291A1

公开(公告)日：2017-04-20

申请号：US15204038

申请日：2016-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hwa KIM ,  Byungbok KANG ,  Chanhoon PARK ,  Jaehyun LEE ,  SungHyup KIM ,  Jaeick HONG

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32844 ,  H01J37/3299 ,  H01J2237/006 ,  Y02C20/30

Abstract: A substrate treatment apparatus may include one or more of a process chamber, a gas supply assembly that may supply one or more gases into the process chamber, a gas exhaust assembly that may exhaust gases from the process chamber, and a gas injector assembly connected to the gas exhaust assembly independently of the process chamber. The gas injector assembly may supply a control gas into the gas exhaust assembly. The apparatus may include a gas injection control device configured to adjustably control the supply of control gas. The gas inject control device may measure an internal pressure of the process chamber and control the supply of control gas based on the internal pressure. The apparatus may include a diffuser that couples the gas injector assembly to the gas exhaust assembly and is configured to diffuse the control gas supplied from the gas injector assembly into the gas exhaust assembly.