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公开(公告)号：US12014762B2
公开(公告)日：2024-06-18
申请号：US17814057
申请日：2022-07-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Rahul Mishra , Hyunsoo Yang , Ung Hwan Pi
CPC classification number: G11C11/1675 , G11C11/161 , G11C11/1673 , H10B61/20 , H10N50/10 , H10N50/80 , H10N50/85 , H10N52/80 , H10N52/85 , G11C11/1655
Abstract: A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.
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公开(公告)号：US20230298649A1
公开(公告)日：2023-09-21
申请号：US18096161
申请日：2023-01-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , Jaechun Jeon , Andrea Migliorini , Ung Hwan Pi
CPC classification number: G11C11/1673 , H10B61/00 , G11C11/1675
Abstract: A magnetic memory device includes a conductive line that extends in a first direction, and a magnetic track line that extends in the first direction on a top surface of the conductive line. The conductive line may include a first region having a first width in a second direction, and a second region having a second width in the second direction. The first direction and the second direction are parallel to the top surface of the conductive line and are perpendicular to each other. The second width may be greater than the first width. The magnetic track line includes first domains arranged in the first direction on the first region of the conductive line, and second domains arranged in the first direction on the second region of the conductive line. A size of each of the second domains may be less than a size of each of the first domains.
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公开(公告)号：US11610940B2
公开(公告)日：2023-03-21
申请号：US16897810
申请日：2020-06-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ung Hwan Pi , Dongkyu Lee
IPC: H01L27/22 , H01L23/528 , H01F10/32 , G11C11/16 , H01L43/02
Abstract: Disclosed is a magnetic memory device including a first magnetic pattern that extends in a first direction and has a magnetization direction fixed in one direction, and a plurality of second magnetic patterns that extend across the first magnetic pattern. The second magnetic patterns extend in a second direction intersecting the first direction and are spaced apart from each other in the first direction. Each of the second magnetic patterns includes a plurality of magnetic domains that are spaced apart from each other in the second direction.
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公开(公告)号：US11176982B2
公开(公告)日：2021-11-16
申请号：US17039455
申请日：2020-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae Hoon Kim , Hee Ju Shin , Ung Hwan Pi
Abstract: A semiconductor device includes a storage layer including at least one first magnetic layer and a reference layer facing the storage layer and including at least one second magnetic layer. The device also includes a tunnel barrier layer between the storage layer and the reference layer. The device further includes at least one spin-orbit torque line adjacent the storage layer.
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公开(公告)号：US20210050383A1
公开(公告)日：2021-02-18
申请号：US16884769
申请日：2020-05-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ung Hwan Pi , Sung Chul Lee , Jangeun Lee
Abstract: A magnetic memory device includes a first cell array structure including first and second free magnetic patterns which extend in a first direction parallel to a top surface of a substrate and are spaced apart from each other in a second direction intersecting the first direction, and a second cell array structure including a third free magnetic pattern between the first and second free magnetic patterns and a fourth free magnetic pattern spaced apart from the third free magnetic pattern with the second free magnetic pattern therebetween. The first cell array structure further includes a first transistor region including first transistors connected to the first and second free magnetic patterns. The second cell array structure further includes a second transistor region including second transistors connected to the third and fourth free magnetic patterns. The second transistor region is spaced apart from the first transistor region in the first direction.
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Patent Agency Ranking
公开(公告)号：US20210050044A1
公开(公告)日：2021-02-18
申请号：US16828429
申请日：2020-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Ung Hwan Pi
Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.
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公开(公告)号：US11727973B2
公开(公告)日：2023-08-15
申请号：US17316973
申请日：2021-05-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eunsun Noh , Juhyun Kim , Ung Hwan Pi
CPC classification number: G11C11/161 , G01R33/093 , H10N50/01 , H10N50/85
Abstract: A magnetic property measuring system includes coil structures configured to apply a magnetic field to a sample, a light source configured to irradiate incident light to the sample, and a detector configured to detect polarization of light reflected from the sample. The magnetic field is perpendicular to a surface of the sample. Each coil structure includes a pole piece and a coil surrounding an outer circumferential surface of the pole piece. A wavelength of the incident light is equal to or less than about 580 nm.
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公开(公告)号：US11706998B2
公开(公告)日：2023-07-18
申请号：US17344206
申请日：2021-06-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwang Seok Kim , Young Man Jang , Ung Hwan Pi
CPC classification number: H10N50/85 , G11C11/161 , G11C11/1659 , H10B61/22 , H10N50/80 , H01F10/3286
Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.
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公开(公告)号：US20230165158A1
公开(公告)日：2023-05-25
申请号：US18051857
申请日：2022-11-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , See-Hun Yang , Jiho Yoon , Ung Hwan Pi
CPC classification number: H01L43/08 , H01L43/02 , H01L43/10 , H01L27/222 , G11C11/161
Abstract: A magnetic memory device includes a conductive line extending in a first direction, and a magnetic track extending in the first direction on the conductive line. The magnetic track includes a lower magnetic layer, a spacer layer and an upper magnetic layer sequentially stacked on the conductive line, and a non-magnetic pattern on the spacer layer and adjacent a side of the upper magnetic layer. The non-magnetic pattern vertically overlaps with a portion of the lower magnetic layer. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer.
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公开(公告)号：US11456332B2
公开(公告)日：2022-09-27
申请号：US16884769
申请日：2020-05-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ung Hwan Pi , Sung Chul Lee , Jangeun Lee
Abstract: A magnetic memory device includes a first cell array structure including first and second free magnetic patterns which extend in a first direction parallel to a top surface of a substrate and are spaced apart from each other in a second direction intersecting the first direction, and a second cell array structure including a third free magnetic pattern between the first and second free magnetic patterns and a fourth free magnetic pattern spaced apart from the third free magnetic pattern with the second free magnetic pattern therebetween. The first cell array structure further includes a first transistor region including first transistors connected to the first and second free magnetic patterns. The second cell array structure further includes a second transistor region including second transistors connected to the third and fourth free magnetic patterns. The second transistor region is spaced apart from the first transistor region in the first direction.
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