公开(公告)号：US20220376119A1

公开(公告)日：2022-11-24

申请号：US17585284

申请日：2022-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehyun YOO ,  Kyuok LEE ,  Uihui KWON ,  Junhyeok KIM ,  Yongwoo JEON ,  Dawon JEONG ,  Jaehyok KO

IPC: H01L29/861 ,  H01L29/40 ,  H01L29/06

Abstract: A semiconductor protection device includes: an N-type epitaxial layer, a device isolation layer disposed in the N-type epitaxial layer, an N-type drift region disposed below the device isolation layer, an N-type well disposed in the N-type drift region, first and second P-type drift regions, respectively disposed to be in contact with the device isolation layer, and spaced apart from the N-type drift region, first and second P-type doped regions, respectively disposed in the first and second P-type drift regions, first and second N-type floating wells, respectively disposed in the first and second P-type drift regions to be spaced apart from the first and second P-type doped regions, and disposed to be in contact with the device isolation layer, and first and second contact layer, respectively disposed to cover the first and second N-type floating well, to be in contact with the device isolation layer.

公开(公告)号：US20150333202A1

公开(公告)日：2015-11-19

申请号：US14711420

申请日：2015-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon AHN ,  Yongwoo JEON ,  Jungwoo KIM ,  Haeseok PARK ,  Seungeon AHN ,  Seunghyup LEE ,  Myounghoon JUNG ,  Hyuksoon CHOI

IPC: H01L31/0352 ,  H01L31/0336 ,  H01L31/18 ,  H01L31/105

CPC classification number: H01L31/0336 ,  H01L27/14601 ,  H01L27/14643 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/105 ,  H01L31/18 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.

Abstract translation: 示例性实施例涉及包括衬底，形成在衬底上的绝缘掩模层和与绝缘掩模层的表面接触的第一类型半导体层，有源层和第二类型半导体层的横向型光电二极管， 依次设置在与绝缘掩模层的表面基本平行的方向上。 绝缘掩模层包括通孔，并且通过使用横向过度生长法从通孔顺序地形成第一类型半导体层，有源层和第二类型半导体层。

公开(公告)号：US20170033797A1

公开(公告)日：2017-02-02

申请号：US15213973

申请日：2016-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su-Jin JUNG ,  Yongwoo JEON ,  Jangje PARK ,  Sang-Pil LEE

IPC: H03K17/96 ,  H05K1/11 ,  H05K5/00 ,  H05K5/02 ,  G06F1/16 ,  H05K1/18

Abstract: An electronic device is provided. The electronic device includes a housing including a window, configured to form a 1st side of the electronic device, and a 2nd side of the electronic device directed in an opposite direction of the 1st side of the electronic device, a circuit board between the 1st side and the 2nd side of the electronic device, and including an input circuit configured to detect an input based on a change in a capacitance, a spacer between the window and the circuit board, and having at least one space formed on one side facing the circuit board, a contact electrically connected to the input circuit by being mounted to one side of the circuit board, and contained in the at least one space, and a conductive plate coupled to the spacer, and electrically connected to the contact through the at least one space.

Abstract translation: 提供电子设备。 电子设备包括：壳体，其包括构造成形成电子设备的第一侧的窗口，以及电子设备的与电子设备的第一侧相反的方向指向的第二侧，第一侧 和电子设备的第二侧，并且包括被配置为基于电容变化来检测输入的输入电路，窗口和电路板之间的间隔物，并且具有形成在面向电路的一侧上的至少一个空间 电路板，通过安装到电路板的一侧并且容纳在至少一个空间中而与输入电路电连接的触点和耦合到间隔件的导电板，并通过至少一个电连接到触点 空间。

公开(公告)号：US20140356563A1

公开(公告)日：2014-12-04

申请号：US14280900

申请日：2014-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungmo YANG ,  Kiwoong KIM ,  Kwangsu SEO ,  Sungjae LEE ,  Yongwoo JEON ,  Wonhee CHOI ,  Byounguk YOON

IPC: H05K5/03 ,  B29C35/08 ,  B29C45/16

CPC classification number: G03F7/0002 ,  B29C35/0805 ,  B29C37/0053 ,  B29C43/021 ,  B29C43/18 ,  B29C45/1679 ,  B29C2035/0827 ,  B29C2037/0035 ,  B29C2037/0042 ,  G03F7/20 ,  H04M1/0283 ,  H05K5/03 ,  Y10T428/13 ,  Y10T428/1352

Abstract: A surface treatment method of an electronic device is provided. The surface treatment method includes processing a first pattern on a surface of a top mold and a second pattern on a surface of a bottom mold, coating a Ultra-Violet (UV) molding liquid on each of a front surface of a raw sheet material and the bottom mold facing a rear surface of the raw sheet material raw, positioning the raw sheet material between the top mold and the bottom mold, pressing the top mold and the bottom mold to each other, curing the UV molding liquid, and separating the raw sheet material from the top mold and the bottom mold and forming a print layer on the front surface and the rear surface of the raw sheet material.

Abstract translation: 提供电子设备的表面处理方法。 表面处理方法包括在上模的表面上加工第一图案，在底模的表面上加工第二图案，在原纸片的前表面上涂覆超紫（UV）成型液， 底部模具面对原料片材的后表面，将原料片材定位在顶模和底模之间，将顶模和底模相互压合，固化UV成型液，并分离原料 从顶模和底模获得片材，并在原料片的前表面和后表面上形成印刷层。