公开(公告)号：US20230268017A1

公开(公告)日：2023-08-24

申请号：US18310843

申请日：2023-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/34 ,  G11C16/04 ,  G11C5/06 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4096 ,  H10B43/27 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/3418 ,  G11C5/06 ,  G11C11/4074 ,  G11C11/4085 ,  G11C11/4096 ,  H10B43/27 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10 ,  H10B43/35

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20130242667A1

公开(公告)日：2013-09-19

申请号：US13867716

申请日：2013-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/08 ,  G11C16/26 ,  G11C16/14 ,  G11C16/12

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20130107629A1

公开(公告)日：2013-05-02

申请号：US13721963

申请日：2012-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunil SHIM ,  Jaehoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/30 ,  G11C16/10 ,  G11C16/34

CPC classification number: G11C16/30 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/3459 ,  H01L27/1157 ,  H01L27/11582

Abstract: According to example embodiments of inventive concepts, a nonvolatile memory device includes a memory cell array including a plurality of memory cells; a word line driver configured to at least one of select and unselect a plurality of word lines connected with the plurality of memory cells, respectively, and to supply voltages to the plurality of word lines; and a read/write circuit configured to apply bias voltages to a plurality of bit lines connected with the plurality of memory cells. The read/write circuit may be configured to adjust levels of the bias voltages applied to the plurality of bit lines according to location of a selected word line among the plurality of word lines.

Abstract translation: 根据发明构思的示例实施例，非易失性存储器件包括包括多个存储器单元的存储单元阵列; 字线驱动器，被配置为分别选择和取消选择与所述多个存储器单元连接的多个字线中的至少一个，并向所述多个字线提供电压; 以及读/写电路，被配置为向与多个存储单元连接的多个位线施加偏置电压。 读/写电路可以被配置为根据多个字线中所选择的字线的位置来调整施加到多个位线的偏置电压的电平。

公开(公告)号：US20220093195A1

公开(公告)日：2022-03-24

申请号：US17542183

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/34 ,  G11C16/04 ,  H01L27/11582 ,  G11C5/06 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4096 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20190096495A1

公开(公告)日：2019-03-28

申请号：US16206383

申请日：2018-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/14 ,  G11C16/04 ,  G11C16/08 ,  H01L27/11582

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20200234782A1

公开(公告)日：2020-07-23

申请号：US16844317

申请日：2020-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/34 ,  G11C16/04 ,  H01L27/11582 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20150117118A1

公开(公告)日：2015-04-30

申请号：US14590665

申请日：2015-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/14

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.