公开(公告)号：US20160068711A1

公开(公告)日：2016-03-10

申请号：US14785014

申请日：2014-04-17

Applicant: Samsung SDI Co., Ltd.

Inventor： Jung Min CHOI ,  Haruki NOJO ,  Yong Soon PARK ,  Yong Sik YOO ,  Dong Hun KANG ,  Go Un KIM ,  Tae Wan KIM

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1454 ,  C09K3/1463 ,  C09K3/1472 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31058 ,  H01L21/3212

Abstract: The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.

Abstract translation: 本发明涉及一种用于研磨包括极性溶剂或非极性溶剂和金属氧化物磨料中的至少一种的有机膜的有机膜CMP浆料组合物，其为酸性，并且碳含量为约50〜 95atm％，以及使用其的抛光方法。

公开(公告)号：US20170335139A1

公开(公告)日：2017-11-23

申请号：US15525321

申请日：2015-12-07

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Jeong Hwan JEONG ,  Young Chul JUNG ,  Dong Hun KANG ,  Tae Wan KIM ,  Jong IL NOH ,  Chang Ki HONG

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  C23F3/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  C23F3/04 ,  H01L21/3212

Abstract: Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.

公开(公告)号：US20180362807A1

公开(公告)日：2018-12-20

申请号：US16100561

申请日：2018-08-10

Applicant: Samsung SDI Co., Ltd.

Inventor： Jung Min CHOI ,  Haruki NOJO ,  Yong Soon PARK ,  Yong Sik YOO ,  Dong Hun KANG ,  Go Un KIM ,  Tae Wan KIM

IPC: C09G1/02 ,  B24B37/04 ,  B24B1/00 ,  C09K3/14 ,  C09K13/06 ,  C09G1/00 ,  H01L21/306 ,  H01L21/3105 ,  C09G1/06 ,  C09G1/04 ,  H01L21/321

Abstract: The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.

公开(公告)号：US20170204312A1

公开(公告)日：2017-07-20

申请号：US15326199

申请日：2015-06-10

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yong Sik YOO ,  Jung Min CHOI ,  Dong Hun KANG ,  Tae Wan KIM ,  Go Un KIM ,  Yong Kuk KIM

IPC: C09K3/14 ,  H01L21/3105

CPC classification number: C09K3/14 ,  C09G1/02 ,  C09K3/1472 ,  H01L21/31058

Abstract: The present invention relates to a CMP slurry composition, for an organic film, for polishing an organic film and an organic film polishing method using same, the CMP slurry composition comprising: a polar solvent and/or a non-polar solvent; metal oxide abrasives; an oxidant; and a heterocyclic compound, wherein the heterocyclic compound, as a heteroatom, comprises one or two of oxygen (O) atom, sulfur (S) atom and nitrogen (N) atom and has carbon content of 50-95 atom %.