摘要:
A crystalline clopidogrel naphthalenesulfonate or a hydrate thereof, a method for preparing same, and a pharmaceutical composition containing same are provided.
摘要:
The mutual salt of raloxifene and bisphosphonic acid exhibits unexpectedly synergistic effects of two components to enhance bone mineral density (BMD), control blood-calcium density, and lower the serum cholesterol level.
摘要:
This invention relates to an improved method for stereoselectively preparing 2¢¥-deoxy-2¢¥,2¢¥-difluorocytidine of formula (I), which comprises the steps of reacting a 1-halo ribofuranose compound of formula (III) with a nucleobase of formula (IV) in a solvent to obtain a nucleoside of formula (II) with removing the silyl halide of formula (V) produced during the reaction; and deprotecting the nucleoside of formula (II) to obtain 2¢¥-deoxy-2¢¥,2¢¥-difluorocytidine of formula (I).
摘要:
Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.
摘要:
Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.
摘要:
A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.
摘要:
A method of operating a memory device includes masking at least one bank among a plurality of banks in response to a mode register writing command; and performing a refresh operation on a plurality of rows in one of unmasked banks in response to a first per-bank refresh command.
摘要:
Provided is a semiconductor memory device including a sub-word-line driving circuit capable of reducing an amount of leakage current due to coupling. The semiconductor memory device includes a word-line enable signal generating circuit and a sub-word-line driving circuit. The sub-word-line driving circuit provides a pull-down current path between a selected word line and ground for a pulse type period of time in a precharge mode following an active mode for the selected word line, generates a word line driving signal on the basis of a main word line driving signal, a first sub-word-line control signal, and a second sub-word-line control signal, and provides the word line driving signal to a memory cell array. The semiconductor memory device may reduce an amount of leakage current flowing to a ground through the sub-word-line driving circuit.
摘要:
A semiconductor memory device having improved refresh characteristics includes a memory array including a plurality of memory cells; a test unit configured to test refresh characteristics of the memory array and generate a first fail address signal; a storage unit configured to store the first fail address signal; and a refresh unit configured to perform a refresh operation on the memory array, wherein the refresh unit is configured to receive the first fail address signal from the storage unit, perform the refresh operation on a first memory cell that does not correspond to the first fail address signal according to a first period, and perform the refresh operation on a second memory cell that corresponds to the first fail address signal according to a second period that is shorter than the first period.
摘要:
A scroll-type compressor includes a compression unit, a main frame supporting the compression unit, and a driving shaft having an oil supply path. The oil supply path is located eccentrically with the driving shaft and an upper part of the driving shaft is supported by the main frame. The compressor also has a motor for rotating the driving shaft, an oil cap located on an upper side of a rotor of the motor, and a balance member to compensate the driving shaft.