摘要:
Field-effect transistors (FETs) having nanowire channels are provided. In one aspect, a FET is provided. The FET comprises a substrate having a silicon-on-insulator (SOI) layer which is divided into at least two sections electrically isolated from one another, one section included in a source region and the other section included in a drain region; a channel region connecting the source region and the drain region and including at least one nanowire; an epitaxial semiconductor material, grown from the SOI layer, covering the nanowire and attaching the nanowire to each section of the SOI layer; and a gate over the channel region.
摘要:
Techniques for the fabrication of field-effect transistors (FETs) having nanowire channels are provided. In one aspect, a method of fabricating a FET is provided comprising the following steps. A substrate is provided having a silicon-on-insulator (SOI) layer. At least one nanowire is deposited over the SOI layer. A sacrificial gate is formed over the SOI layer so as to cover a portion of the nanowire that forms a channel region. An epitaxial semiconductor material is selectively grown from the SOI layer that covers the nanowire and attaches the nanowire to the SOI layer in a source region and in a drain region. The sacrificial gate is removed. An oxide is formed that divides the SOI layer into at least two electrically isolated sections, one section included in the source region and the other section included in the drain region. A gate dielectric layer is formed over the channel region. A gate is formed over the channel region separated from the nanowire by the gate dielectric layer. A metal-semiconductor alloy is formed over the source and drain regions.
摘要:
Techniques for the fabrication of field-effect transistors (FETs) having nanowire channels are provided. In one aspect, a method of fabricating a FET is provided comprising the following steps. A substrate is provided having a silicon-on-insulator (SOI) layer. At least one nanowire is deposited over the SOI layer. A sacrificial gate is formed over the SOI layer so as to cover a portion of the nanowire that forms a channel region. An epitaxial semiconductor material is selectively grown from the SOI layer that covers the nanowire and attaches the nanowire to the SOI layer in a source region and in a drain region. The sacrificial gate is removed. An oxide is formed that divides the SOI layer into at least two electrically isolated sections, one section included in the source region and the other section included in the drain region. A gate dielectric layer is formed over the channel region. A gate is formed over the channel region separated from the nanowire by the gate dielectric layer. A metal-semiconductor alloy is formed over the source and drain regions.
摘要:
Field-effect transistors (FETs) having nanowire channels are provided. In one aspect, a FET is provided. The FET comprises a substrate having a silicon-on-insulator (SOI) layer which is divided into at least two sections electrically isolated from one another, one section included in a source region and the other section included in a drain region; a channel region connecting the source region and the drain region and including at least one nanowire; an epitaxial semiconductor material, grown from the SOI layer, covering the nanowire and attaching the nanowire to each section of the SOI layer; and a gate over the channel region.
摘要:
A method for depositing fine particles from a suspension on selected regions of a substrate is disclosed. The particles are deposited on selected regions of a clean hydrophobic semiconductor surface that are surrounded by a wetting boundary which includes a mesa formed by etching through a silicon-on-insulator (SOI) film and an underlying buried oxide of an SOI substrate. The process is well suited for the growth of semiconductor nanowires that nucleates from fine particle used as a catalyst.
摘要:
Disclosed herein is a method of forming a nanostructure having nanowires by forming a mask with at least one opening on a surface of a substrate, to expose a portion of the surface of the substrate; depositing particles of a metal capable of catalyzing semiconductor nanowire growth on the exposed surface of the substrate by electroplating or electroless plating; and growing nanowires on the plated substrate with a precursor gas by a vapor-liquid-solid (VLS) process. Also disclosed is a nanostructure including nanowires prepared by the above method.
摘要:
Apparatus and methods for packaging optical communication devices include optical bench structures, such as silicon-optical benches (SiOB). An optical communications apparatus includes an optical bench comprising a substrate having an electrical turning via formed therein. An optoelectronic (OE) chip and integrated circuit (IC) chip are mounted on the optical bench and electrically connected using the electrical turning via. The electrical turning via extends in directions both perpendicular and transverse to a surface of the substrate such that the OE chip and IC chip can be mounted on perpendicular surfaces of the optical bench in close proximity and electrically connected using the electrical turning via. More specifically, the OE chip and IC chip are mounted on the optical bench such that a light-emitting or light-detecting surface of the OE chip is substantially perpendicular to a surface of the IC chip having contacts, and such that optical transmission lines that are mounted parallel to the substrate surface can be directly coupled to the OE chip.
摘要:
A method (and structure) of forming a vertically-self-aligned silicide contact to an underlying SiGe layer, includes forming a layer of silicon of a first predetermined thickness on the SiGe layer and forming a layer of metal on the silicon layer, where the metal layer has a second predetermined thickness. A thermal annealing process at a predetermined temperature then forms a silicide of the silicon and metal, where the predetermined temperature is chosen to substantially preclude penetration of the silicide into the underlying SiGe layer.
摘要:
A semiconductor device (and method for making the same) includes a strained-silicon channel formed adjacent a source and a drain, a first gate formed over a first side of the channel, a second gate formed over a second side of the channel, a first gate dielectric formed between the first gate and the strained-silicon channel, and a second gate dielectric formed between the second gate and the strained-silicon channel. The strained-silicon channel is non-planar.
摘要:
A semiconductor device (and method for making the same) includes a strained-silicon channel formed adjacent a source and a drain, a first gate formed over a first side of the channel, a second gate formed over a second side of the channel, a first gate dielectric formed between the first gate and the strained-silicon channel, and a second gate dielectric formed between the second gate and the strained-silicon channel. The strained-silicon channel is non-planar.