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33 条记录 (耗时 0.031 秒)

    Nitride based semiconductor light emitting device
    1.
    发明授权
    Nitride based semiconductor light emitting device 有权
    基于氮化物的半导体发光器件

    公开(公告)号：US08759815B2

    公开(公告)日：2014-06-24

    申请号：US13818572

    申请日：2011-09-01

    申请人： Seong Ran Jeon ,  Young Ho Song ,  Jae Bum Kim ,  Young Woo Kim ,  Woo Young Cheon ,  Jin Hong Kim

    发明人： Seong Ran Jeon ,  Young Ho Song ,  Jae Bum Kim ,  Young Woo Kim ,  Woo Young Cheon ,  Jin Hong Kim

    IPC分类号： H01L33/04

    CPC分类号： H01L33/12 ,  H01L33/04 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

    摘要： The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.

    摘要翻译： 本发明涉及通过增加电子和有助于发光的空穴的复合速率而提高发光效率的氮化物基半导体发光器件，这是通过匹配电子和空穴波函数的空间分布而得到的。 根据本发明的氮化物基半导体发光器件包括n型氮化物层，形成在n型氮化物层上的有源层和形成在有源层上的p型氮化物层。 在这个阶段，应变控制层和至少一个层在有源层中具有比量子阱层更大的能带隙。 应变控制层设置在形成有源层的量子阱层的区域中。 此外，应变控制层的能带隙小于有源层的量子势垒的能带隙。

    NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请
    NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    基于氮化物的半导体发光器件

    公开(公告)号：US20130299775A1

    公开(公告)日：2013-11-14

    申请号：US13818572

    申请日：2011-09-01

    申请人： Seong Ran Jeon ,  Young Ho Song ,  Jae Bum Kim ,  Young Woo Kim ,  Woo Young Cheon ,  Jin Hong Kim

    发明人： Seong Ran Jeon ,  Young Ho Song ,  Jae Bum Kim ,  Young Woo Kim ,  Woo Young Cheon ,  Jin Hong Kim

    IPC分类号： H01L33/12 ,  H01L33/04

    CPC分类号： H01L33/12 ,  H01L33/04 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

    摘要： The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.

    摘要翻译： 本发明涉及通过增加电子和有助于发光的空穴的复合速率而提高发光效率的氮化物基半导体发光器件，这是通过匹配电子和空穴波函数的空间分布而得到的。 根据本发明的氮化物基半导体发光器件包括n型氮化物层，形成在n型氮化物层上的有源层和形成在有源层上的p型氮化物层。 在这个阶段，应变控制层和至少一个层在有源层中具有比量子阱层更大的能带隙。 应变控制层设置在形成有源层的量子阱层的区域中。 此外，应变控制层的能带隙小于有源层的量子势垒的能带隙。

    Multi-luminous element and method for manufacturing same
    3.
    发明授权
    Multi-luminous element and method for manufacturing same 有权
    多发光元件及其制造方法

    公开(公告)号：US08765505B2

    公开(公告)日：2014-07-01

    申请号：US13581399

    申请日：2011-03-15

    申请人： Seong Ran Jeon ,  Jae Bum Kim ,  Seung Jae Lee

    发明人： Seong Ran Jeon ,  Jae Bum Kim ,  Seung Jae Lee

    IPC分类号： H01L33/06 ,  H01L33/32

    CPC分类号： H01L33/08 ,  H01L33/06 ,  H01L33/32

    摘要： The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same.

    摘要翻译： 多发光元件及其制造方法技术领域本发明涉及多发光元件及其制造方法。 本发明提供了一种多发光元件，包括：设置在基板上的缓冲层; 设置在缓冲层上的第一类型半导体层; 第一有源层，其设置在所述第一类型半导体层上并被图案化以暴露所述第一类型半导体层的一部分; 设置在由所述第一有源层曝光的所述第一类型半导体层上的第二有源层; 以及设置在第一有源层和第二有源层上的第二类型半导体层，第一和第二有源层在水平方向上重复设置，以及其制造方法。

    MULTI-LUMINOUS ELEMENT AND METHOD FOR MANUFACTURING SAME
    4.
    发明申请
    MULTI-LUMINOUS ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
    多元件元件及其制造方法

    公开(公告)号：US20120319081A1

    公开(公告)日：2012-12-20

    申请号：US13581399

    申请日：2011-03-15

    申请人： Seong Ran Jeon ,  Jae Bum Kim ,  Seung Jae Lee

    发明人： Seong Ran Jeon ,  Jae Bum Kim ,  Seung Jae Lee

    IPC分类号： H01L33/06 ,  H01L33/32

    CPC分类号： H01L33/08 ,  H01L33/06 ,  H01L33/32

    摘要： The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same.

    摘要翻译： 多发光元件及其制造方法技术领域本发明涉及多发光元件及其制造方法。 本发明提供了一种多发光元件，包括：设置在基板上的缓冲层; 设置在缓冲层上的第一类型半导体层; 第一有源层，其设置在所述第一类型半导体层上并被图案化以暴露所述第一类型半导体层的一部分; 设置在由所述第一有源层曝光的所述第一类型半导体层上的第二有源层; 以及设置在第一有源层和第二有源层上的第二类型半导体层，第一和第二有源层在水平方向上重复设置，及其制造方法。

    Backlight unit
    6.
    发明授权
    Backlight unit 有权
    背光单元

    公开(公告)号：US07434957B2

    公开(公告)日：2008-10-14

    申请号：US10959265

    申请日：2004-10-06

    申请人： Jae Bum Kim ,  Seok Hwan Oh

    发明人： Jae Bum Kim ,  Seok Hwan Oh

    IPC分类号： F21S4/00

    CPC分类号： G02F1/133604 ,  F21V19/0085 ,  F21V19/009 ,  G02F1/133608

    摘要： A backlight unit includes a plurality of lamps, a gripping device, and fasteners. The gripping device couples the ends of the plurality of lamps. The fasteners secure the lamps and gripping device to a frame of the backlight unit. A method of assembling a backlight display includes: aligning a cylindrical lamp with a flange of a gripping device; sliding the lamp past a flaring portion of a holding portion; and seating the lamp into the holding portion by pressing the lamp into a concave portion of the holding portion.

    摘要翻译： 背光单元包括多个灯，夹持装置和紧固件。 夹持装置连接多个灯的端部。 紧固件将灯和夹持装置固定到背光单元的框架上。 组装背光显示器的方法包括：将圆柱形灯与夹持装置的凸缘对准; 将灯滑过保持部分的扩口部分; 并且通过将灯压入保持部的凹部来将灯安置在保持部中。

    Method of fabricating light-guide plate
    7.
    发明授权
    Method of fabricating light-guide plate 有权
    制造导光板的方法

    公开(公告)号：US07323123B2

    公开(公告)日：2008-01-29

    申请号：US10742755

    申请日：2003-12-23

    申请人： Jae Bum Kim

    发明人： Jae Bum Kim

    IPC分类号： B29D11/00

    CPC分类号： G02B6/0036 ,  B29C33/424 ,  B29D11/00663 ,  G02B6/0038 ,  G02B6/0065 ,  Y10S425/808

    摘要： A method of fabricating a light-guide plate includes preparing an upper mold frame having an inclined inner surface and a lower mold frame having a space therein, preparing a micro pattern plate having a surface including one of a plurality of grooves and a plurality of protrusions formed using photolithographic processes, inserting the micro pattern plate into the space of the lower mold frame, the surface of the micro pattern plate facing the inclined inner surface of the upper mold frame, positioning the upper and lower mold frames together, and injecting light-guide plate forming material into a space between the upper and lower mold frames.

    摘要翻译： 制造导光板的方法包括制备具有倾斜内表面的上模框架和在其中具有空间的下模框架，制备具有包括多个槽中的一个的表面的多个突起和多个突起的微图案板 使用光刻工艺形成，将微图案板插入下模架的空间中，微图案板的表面面向上模框架的倾斜内表面，将上模架和下模架定位在一起， 导向板形成材料进入上模具框架和下模架之间的空间。