公开(公告)号：US09378962B2

公开(公告)日：2016-06-28

申请号：US13601539

申请日：2012-08-31

申请人： Shigeki Hattori ,  Masakazu Yamagiwa ,  Masaya Terai ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Yoshiaki Fukuzumi

发明人： Shigeki Hattori ,  Masakazu Yamagiwa ,  Masaya Terai ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Yoshiaki Fukuzumi

IPC分类号： G11C16/04 ,  H01L21/28 ,  B82Y10/00 ,  H01L29/423 ,  H01L29/788 ,  H01L27/115

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  G11C16/0416 ,  G11C16/0483 ,  H01L27/11556 ,  H01L29/42332 ,  H01L29/7881

摘要： A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.

摘要翻译： 非易失性半导体存储装置包括半导体层，形成在半导体层上的第一绝缘膜，形成在第一绝缘膜上并具有细金属颗粒的电荷存储层，形成在电荷存储层上的第二绝缘膜和栅极 电极形成在第二绝缘膜上。 在写入操作期间，在栅极电极和半导体层两端施加差分电压，以使栅极电极位于比半导体层低的电压下，并将正电荷存储在电荷存储层中。

公开(公告)号：US20130242670A1

公开(公告)日：2013-09-19

申请号：US13601539

申请日：2012-08-31

申请人： Shigeki Hattori ,  Masakazu Yamagiwa ,  Masaya Terai ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Yoshiaki Fukuzumi

发明人： Shigeki Hattori ,  Masakazu Yamagiwa ,  Masaya Terai ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Yoshiaki Fukuzumi

IPC分类号： H01L29/788 ,  G11C16/04

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  G11C16/0416 ,  G11C16/0483 ,  H01L27/11556 ,  H01L29/42332 ,  H01L29/7881

摘要： A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.

摘要翻译： 非易失性半导体存储装置包括半导体层，形成在半导体层上的第一绝缘膜，形成在第一绝缘膜上并具有细金属颗粒的电荷存储层，形成在电荷存储层上的第二绝缘膜和栅极 电极形成在第二绝缘膜上。 在写入操作期间，在栅极电极和半导体层两端施加差分电压，以使栅极电极位于比半导体层低的电压下，并将正电荷存储在电荷存储层中。

公开(公告)号：US20120112171A1

公开(公告)日：2012-05-10

申请号：US13234657

申请日：2011-09-16

申请人： Shigeki Hattori ,  Reika Ichihara ,  Masaya Terai ,  Hideyuki Nishizawa ,  Tsukasa Tada ,  Koji Asakawa ,  Hiroyuki Fuke ,  Satoshi Mikoshiba ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

发明人： Shigeki Hattori ,  Reika Ichihara ,  Masaya Terai ,  Hideyuki Nishizawa ,  Tsukasa Tada ,  Koji Asakawa ,  Hiroyuki Fuke ,  Satoshi Mikoshiba ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

IPC分类号： H01L51/54 ,  H01L51/40

CPC分类号： H01L29/513 ,  H01L21/02118 ,  H01L21/02227 ,  H01L21/28282 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L51/0591

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一层叠结构体，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜。 第一堆叠结构体包括沿着第一方向堆叠的多个第一电极膜和设置在第一电极膜之间的第一电极间绝缘膜。 第一半导体层与第一电极膜的侧面相对。 第一有机膜设置在第一电极膜和第一半导体层的侧面之间并含有有机化合物。 第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。 设置在第一有机膜和第一电极膜的侧面之间的第一电极侧绝缘膜。

公开(公告)号：US08633526B2

公开(公告)日：2014-01-21

申请号：US13234657

申请日：2011-09-16

申请人： Shigeki Hattori ,  Reika Ichihara ,  Masaya Terai ,  Hideyuki Nishizawa ,  Tsukasa Tada ,  Koji Asakawa ,  Hiroyuki Fuke ,  Satoshi Mikoshiba ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

发明人： Shigeki Hattori ,  Reika Ichihara ,  Masaya Terai ,  Hideyuki Nishizawa ,  Tsukasa Tada ,  Koji Asakawa ,  Hiroyuki Fuke ,  Satoshi Mikoshiba ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

IPC分类号： H01L27/108

CPC分类号： H01L29/513 ,  H01L21/02118 ,  H01L21/02227 ,  H01L21/28282 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L51/0591

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一层叠结构体，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜。 第一堆叠结构体包括沿着第一方向堆叠的多个第一电极膜和设置在第一电极膜之间的第一电极间绝缘膜。 第一半导体层与第一电极膜的侧面相对。 第一有机膜设置在第一电极膜和第一半导体层的侧面之间并含有有机化合物。 第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。 设置在第一有机膜和第一电极膜的侧面之间的第一电极侧绝缘膜。

公开(公告)号：US08896052B2

公开(公告)日：2014-11-25

申请号：US13727160

申请日：2012-12-26

申请人： Misako Morota ,  Hideyuki Nishizawa ,  Masaya Terai ,  Shigeki Hattori ,  Koji Asakawa

发明人： Misako Morota ,  Hideyuki Nishizawa ,  Masaya Terai ,  Shigeki Hattori ,  Koji Asakawa

IPC分类号： H01L29/792 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L27/115

CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.

摘要翻译： 实施例的非易失性半导体存储器件包括：半导体层; 隧道绝缘膜，其形成在所述半导体层上并且包括第一有机分子膜，所述第一有机分子膜包含以烷基分子链为主链的第一有机分子; 形成在隧道绝缘膜上的电荷存储层，电荷存储层由无机材料制成; 形成在电荷存储层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。

公开(公告)号：US08890234B2

公开(公告)日：2014-11-18

申请号：US13721860

申请日：2012-12-20

申请人： Masaya Terai ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Tsukasa Tada

发明人： Masaya Terai ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Tsukasa Tada

IPC分类号： H01L29/792 ,  H01L21/28 ,  H01L51/05 ,  H01L27/115 ,  H01L51/00

CPC分类号： H01L27/11582 ,  G11C13/0016 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/71 ,  G11C2213/75 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792 ,  H01L29/7926 ,  H01L51/0078 ,  H01L51/0591

摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.

摘要翻译： 实施例的非易失性半导体存储器件包括：半导体层; 形成在半导体层上的隧道绝缘膜; 形成在所述隧道绝缘膜上的有机分子层，并且包括第一有机分子和具有比所述第一有机分子分子量小的第二有机分子，所述第一有机分子各自包含第一烷基链或第一烷基卤链，所述第一烷基链或第一烷基卤链具有 所述第一有机分子各自包含结合到所述第一烷基链或所述第一烷基卤链的另一端的电荷存储部分，所述第二有机分子各自包含第二烷基链或第二烷基 卤化物链的一端与隧道绝缘膜结合; 形成在有机分子层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。

公开(公告)号：US20140061762A1

公开(公告)日：2014-03-06

申请号：US13721860

申请日：2012-12-20

申请人： Masaya Terai ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Tsukasa Tada

发明人： Masaya Terai ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Tsukasa Tada

IPC分类号： H01L29/792

CPC分类号： H01L27/11582 ,  G11C13/0016 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/71 ,  G11C2213/75 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792 ,  H01L29/7926 ,  H01L51/0078 ,  H01L51/0591

摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.

摘要翻译： 实施例的非易失性半导体存储器件包括：半导体层; 形成在所述半导体层上的隧道绝缘膜; 形成在所述隧道绝缘膜上的有机分子层，并且包括第一有机分子和具有比所述第一有机分子分子量小的第二有机分子，所述第一有机分子各自包含第一烷基链或第一烷基卤链，所述第一烷基链或第一烷基卤链具有 所述第一有机分子各自包含结合到所述第一烷基链或所述第一烷基卤链的另一端的电荷存储部分，所述第二有机分子各自包含第二烷基链或第二烷基 卤化物链的一端与隧道绝缘膜结合; 形成在有机分子层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。

公开(公告)号：US20120228576A1

公开(公告)日：2012-09-13

申请号：US13236793

申请日：2011-09-20

申请人： Koji Asakawa ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Satoshi Mikoshiba ,  Reika Ichihara ,  Masaya Terai

发明人： Koji Asakawa ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Satoshi Mikoshiba ,  Reika Ichihara ,  Masaya Terai

IPC分类号： H01L47/00 ,  H01L21/02

CPC分类号： H01L51/0591 ,  G11C13/0014 ,  G11C13/003 ,  G11C2213/72 ,  G11C2213/73 ,  G11C2213/77

摘要： A storage device includes: a plurality of first electrode wirings; a plurality of second electrode wirings which cross the first electrode wirings; a via plug which is formed between the second electrode wiring and the two adjacent first electrode wirings, and in which a maximum diameter of a bottom surface opposing the first electrode wirings in a direction vertical to a direction in which the first electrode wirings stretch is smaller than a length corresponding to a pitch of the first electrode wiring plus a width of the first electrode wirings; a first storage element which is formed between the via plug and one of the two first electrode wirings; and a second storage element which is formed between the via plug and the other one of the two first electrode wirings.

摘要翻译： 存储装置包括：多个第一电极布线; 与第一电极布线交叉的多个第二电极布线; 形成在所述第二电极布线和所述两个相邻的第一电极布线之间的通孔塞，其中与所述第一电极布线相反的方向上的与所述第一电极相对的底面的最大直径在与所述第一电极布线拉伸的方向垂直的方向上布线的最大直径较小 比对应于第一电极布线的间距加上第一电极布线的宽度的长度; 第一存储元件，其形成在所述通孔插头和所述两个第一电极布线中的一个之间; 以及第二存储元件，其形成在所述通孔插头和所述两个第一电极布线中的另一个之间。

公开(公告)号：US09047941B2

公开(公告)日：2015-06-02

申请号：US13425796

申请日：2012-03-21

申请人： Hideyuki Nishizawa ,  Reiko Yoshimura ,  Tsukasa Tada ,  Shigeki Hattori ,  Masaya Terai ,  Satoshi Mikoshiba ,  Koji Asakawa

发明人： Hideyuki Nishizawa ,  Reiko Yoshimura ,  Tsukasa Tada ,  Shigeki Hattori ,  Masaya Terai ,  Satoshi Mikoshiba ,  Koji Asakawa

IPC分类号： H01L51/10 ,  H01L29/792 ,  G11C13/00 ,  B82Y10/00 ,  H01L51/00 ,  H01L51/05

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  G11C2213/53 ,  H01L45/1233 ,  H01L45/1253 ,  H01L51/0078 ,  H01L51/0092 ,  H01L51/0098 ,  H01L51/0595

摘要： An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.

摘要翻译： 实施方案的有机分子存储器包括第一导电层，第二导电层和介于第一导电层和第二导电层之间的有机分子层，有机分子层包括电荷储存分子链或可变电阻分子 链，电荷储存分子链或可变阻力分子链，包括稠合多环基团。

公开(公告)号：US20140061763A1

公开(公告)日：2014-03-06

申请号：US13727160

申请日：2012-12-26

申请人： Misako Morota ,  Hideyuki Nishizawa ,  Masaya Terai ,  Shigeki Hattori ,  Koji Asakawa

发明人： Misako Morota ,  Hideyuki Nishizawa ,  Masaya Terai ,  Shigeki Hattori ,  Koji Asakawa

IPC分类号： H01L29/792 ,  H01L29/66

CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.

摘要翻译： 实施例的非易失性半导体存储器件包括：半导体层; 隧道绝缘膜，其形成在所述半导体层上并且包括第一有机分子膜，所述第一有机分子膜包含以烷基分子链为主链的第一有机分子; 形成在隧道绝缘膜上的电荷存储层，电荷存储层由无机材料制成; 形成在电荷存储层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。