公开(公告)号：US4335406A

公开(公告)日：1982-06-15

申请号：US163298

申请日：1980-06-26

申请人： Shinya Ohba ,  Masaharu Kubo ,  Iwao Takemoto ,  Shoji Hanamura ,  Masakazu Aoki

发明人： Shinya Ohba ,  Masaharu Kubo ,  Iwao Takemoto ,  Shoji Hanamura ,  Masakazu Aoki

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/365 ,  H04N5/374 ,  H04N3/15

CPC分类号： H04N5/2173

摘要： This invention provides a signal processing circuit of a solid-state imaging device utilizing discontinuous scanning pulses having fixed interval times, and with a fixed pattern noise-eliminating circuit of high performance. In the signal processing circuit of this invention, switching elements are disposed in a feedback circuit of a signal amplifier (for example, pre-amplifier) and at an output of the signal amplifier, whereby the fixed pattern noise is suppressed so as to attain a high signal-to-noise ratio.

摘要翻译： 本发明提供一种使用具有固定间隔时间的不连续扫描脉冲的固态成像装置的信号处理电路，以及具有高性能的固定图案噪声消除电路。 在本发明的信号处理电路中，开关元件设置在信号放大器（例如前置放大器）的反馈电路中，并在信号放大器的输出端设置，从而抑制固定图案噪声，从而达到 高信噪比。

公开(公告)号：US4032952A

公开(公告)日：1977-06-28

申请号：US347426

申请日：1973-04-03

申请人： Shinya Ohba ,  Iwao Takemoto ,  Masaharu Kubo

发明人： Shinya Ohba ,  Iwao Takemoto ,  Masaharu Kubo

IPC分类号： H01L29/10 ,  H01L29/768 ,  H01L

CPC分类号： H01L29/7685 ,  H01L29/1062 ,  H01L29/76833 ,  H01L29/76841 ,  Y10S148/08

摘要： In a charge transfer semiconductor device majority carriers are transferred within a semiconductor body on a substrate from means for introducing majority carriers to means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating layer which is disposed on one surface of the semiconductor body between the introducing means and the detecting means. Depletion regions are formed within the semiconductor body, so that one end of a depletion region below one electrode reaches the substrate and another end of a depletion region below an electrode next to the one electrode does not reach the substrate, whereby majority carriers below the one electrode are pushed out below the next electrode.

公开(公告)号：US4577231A

公开(公告)日：1986-03-18

申请号：US476415

申请日：1983-03-17

申请人： Shinya Ohba ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Koichi Seki ,  Kenji Takahashi ,  Toshiyuki Akiyama ,  Iwao Takemoto ,  Takuya Imaide ,  Akihide Okuda ,  Masaharu Kubo

发明人： Shinya Ohba ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Koichi Seki ,  Kenji Takahashi ,  Toshiyuki Akiyama ,  Iwao Takemoto ,  Takuya Imaide ,  Akihide Okuda ,  Masaharu Kubo

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/365 ,  H04N5/372 ,  H04N3/14

CPC分类号： H04N3/1512 ,  H01L27/14643

摘要： Disclosed is a two-dimensionally arrayed solid-state imaging device for a television camera having a photodiode array arranged at a photo-sensing section and a readout horizontal register constructed by a charge transfer device (CTD) such as a BCD, CCD or BBD. An inverter circuit is provided for each of the vertical signal lines. An input of the inverter circuit is connected to a vertical signal line drain of at least one transfer transistor arranged between the vertical signal line and the CTD, and an output of the inverter circuit is connected to a gate of the transfer transistor. Transfer efficiency is improved by the insertion of the inverter circuit and fixed pattern noise is substantially reduced by supplying bias currents.

摘要翻译： 公开了一种用于电视摄像机的二维阵列固态成像装置，其具有布置在感光部分的光电二极管阵列和由诸如BCD，CCD或BBD的电荷转移装置（CTD）构成的读出水平寄存器。 为每条垂直信号线提供一个反相器电路。 逆变器电路的输入端连接在布置在垂直信号线和CTD之间的至少一个传输晶体管的垂直信号线漏极，反相器电路的输出端连接到转移晶体管的栅极。 通过插入逆变器电路来提高转移效率，并且通过提供偏置电流大大减少固定图案噪声。

公开(公告)号：US4349743A

公开(公告)日：1982-09-14

申请号：US206865

申请日：1980-11-14

申请人： Shinya Ohba ,  Shoji Hanamura ,  Toshifumi Ozaki ,  Masaharu Kubo ,  Masaaki Nakai ,  Kenji Takahashi ,  Masakazu Aoki ,  Iwao Takemoto ,  Haruhisa Ando ,  Ryuichi Izawa

发明人： Shinya Ohba ,  Shoji Hanamura ,  Toshifumi Ozaki ,  Masaharu Kubo ,  Masaaki Nakai ,  Kenji Takahashi ,  Masakazu Aoki ,  Iwao Takemoto ,  Haruhisa Ando ,  Ryuichi Izawa

IPC分类号： H01L27/14 ,  H01L27/146 ,  H04N3/14 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/365 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378

CPC分类号： H01L27/14643 ,  H04N3/1512 ,  H04N3/1568

摘要： A solid-state imaging device wherein a MOS sensor is employed for a photosensor part, a CTD shift register is employed for a read-out circuit, first and second transfer gates are connected between vertical signal output lines and the CTD, and a reset gate is connected between a juncture of the first and second transfer gates and a reset voltage line. A method is adopted in which signal outputs of a plurality of rows are transferred to the CTD in a horizontal blanking period, and signals of a plurality of rows are simultaneously read out in a horizontal scanning period. At the signal transfer, bias charges are dumped into the vertical signal output lines from the CTD, and mixed charges consisting of the bias charges and signal charges are transferred to the CTD. Thereafter, the signals are read out.

摘要翻译： 一种固态成像装置，其中MOS传感器用于光电传感器部分，CTD移位寄存器用于读出电路，第一和第二传输门连接在垂直信号输出线和CTD之间，复位门 连接在第一和第二传输门的接合点与复位电压线之间。 采用在水平消隐期间将多行的信号输出传送到CTD的方法，并且在水平扫描期间同时读出多行的信号。 在信号传输中，偏置电荷从CTD倾倒到垂直信号输出线路中，由偏置电荷和信号电荷组成的混合电荷转移到CTD。 此后，读出信号。

公开(公告)号：US4295055A

公开(公告)日：1981-10-13

申请号：US46028

申请日：1979-06-06

申请人： Iwao Takemoto ,  Norio Koike ,  Shinya Ohba ,  Haruhisa Ando ,  Masaaki Nakai ,  Syoji Hanamura ,  Ryuichi Izawa ,  Masaharu Kubo ,  Masakazu Aoki ,  Shuhei Tanaka

发明人： Iwao Takemoto ,  Norio Koike ,  Shinya Ohba ,  Haruhisa Ando ,  Masaaki Nakai ,  Syoji Hanamura ,  Ryuichi Izawa ,  Masaharu Kubo ,  Masakazu Aoki ,  Shuhei Tanaka

IPC分类号： G11C19/00 ,  G11C19/18 ,  G11C19/28 ,  H01L27/146 ,  H01L31/10 ,  H03K5/15 ,  H04N3/14

CPC分类号： H03K5/15093 ,  G11C19/184 ,  G11C19/28

摘要： A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and drain terminals and a gate terminal, said first terminal of said first MIST being used as a clock pulse-applying terminal, said gate terminal of said first MIST being used as an input terminal, said second terminal of said first MIST and said first terminal and said gate terminal of said second MIST being connected and used as a scanning pulse output terminal, said second terminal of said second MIST and said first terminal of said third MIST being connected and used as an output terminal, said second terminal of said third MIST being used as a ground terminal, said gate terminal of said third MIST being used as a feedback input terminal.

摘要翻译： 一种用于产生扫描脉冲的电路，包括串联连接的多级基本电路，所述每个基本电路包括第一，第二和第三绝缘栅极场效应晶体管（MIST），每个绝缘栅场效应晶体管的第一和第二端子均为源极 所述第一MIST的所述第一端子用作时钟脉冲施加端子，所述第一MIST的所述栅极端子用作输入端子，所述第一MIST的所述第二端子和所述第一端子的所述第一端子 并且所述第二MIST的所述栅极端子被连接并用作扫描脉冲输出端子，所述第二MIST的所述第二端子和所述第三MIST的所述第一端子被连接并用作输出端子，所述第三MIST的所述第二端子 被用作接地端子，所述第三MIST的所述栅极端子用作反馈输入端子。

公开(公告)号：US4267469A

公开(公告)日：1981-05-12

申请号：US066880

申请日：1979-08-16

申请人： Shinya Ohba ,  Iwao Takemoto ,  Masaaki Nakai ,  Haruhisa Ando ,  Masaharu Kubo

发明人： Shinya Ohba ,  Iwao Takemoto ,  Masaaki Nakai ,  Haruhisa Ando ,  Masaharu Kubo

IPC分类号： H01L27/146 ,  H03K3/42 ,  H01L27/14 ,  H01L29/78 ,  H01L31/00

CPC分类号： H04N5/335 ,  H01L27/14654 ,  H04N5/3591

摘要： In a solid-state imaging device having on an identical semiconductor substrate a plurality of photodiodes which are arrayed in two dimensions, vertical and horizontal switching MOSFETs which select the positions of the photodiodes, and vertical and horizontal scanning circuits which provide scanning pulses for controlling the operations of the vertical and horizontal switching MOSFETs; the improvement therein comprising a clamping circuit which is made up of a diode, a MOSFET or the like and which is disposed between the photodiode and a vertical scanning line of the succeeding stage, so that excess charges overflowing the photodiode are drawn out from the vertical scanning line through the clamping circuit, whereby the blooming can be prevented.

摘要翻译： 在具有相同半导体衬底的固态成像器件中，排列有二维排列的多个光电二极管，选择光电二极管的位置的垂直和水平开关MOSFET以及提供扫描脉冲的垂直和水平扫描电路，用于控制 垂直和水平开关MOSFET的工作; 其改进在于包括由二极管，MOSFET等组成并且设置在光电二极管和后级的垂直扫描线之间的钳位电路，使得溢出光电二极管的过量电荷从垂直线 扫描线通过钳位电路，从而可以防止起霜。

公开(公告)号：US4223330A

公开(公告)日：1980-09-16

申请号：US5567

申请日：1979-01-22

申请人： Norio Koike ,  Iwao Takemoto ,  Shinya Ohba ,  Masaharu Kubo ,  Shuhei Tanaka

发明人： Norio Koike ,  Iwao Takemoto ,  Shinya Ohba ,  Masaharu Kubo ,  Shuhei Tanaka

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/359 ,  H04N5/374 ,  H01L27/14 ,  H01L29/78

CPC分类号： H01L27/14654

摘要： In a solid-state imaging device having, in one major surface region of a semiconductor substrate, photoelectric conversion elements which are disposed in a two-dimensional array, vertical switching metal-insulator-semiconductor field effect transistors and horizontal switching metal-insulator-semiconductor field effect transistors which select the photoelectric conversion elements, and vertical and horizontal scanning circuits which turn the switching transistors "on" and "off," a solid-state imaging device characterized in that the vertical switching metal-insulator-semiconductor field effect transistors which are not selected are placed into a deeper cutoff state, i.e., the major surface regions of the semiconductor substrate corresponding to gate electrodes of these vertical switching metal-insulator-semiconductor field effect transistors are placed at an accumulation level.

摘要翻译： 在具有在半导体衬底的一个主表面区域中设置为二维阵列的光电转换元件的立体成像器件中，垂直开关金属 - 绝缘体 - 半导体场效应晶体管和水平开关金属 - 绝缘体半导体 选择光电转换元件的场效应晶体管以及使开关晶体管“导通”和“截止”的垂直和水平扫描电路，其特征在于垂直开关金属 - 绝缘体半导体场效应晶体管 未选择的位置被置于更深的截止状态，即，对应于这些垂直开关金属 - 绝缘体 - 半导体场效应晶体管的栅极的半导体衬底的主表面区域被放置在累积水平。

公开(公告)号：US4514766A

公开(公告)日：1985-04-30

申请号：US482791

申请日：1983-04-07

申请人： Norio Koike ,  Iwao Takemoto ,  Shinya Ohba ,  Toshiaki Masuhara ,  Masaharu Kubo

发明人： Norio Koike ,  Iwao Takemoto ,  Shinya Ohba ,  Toshiaki Masuhara ,  Masaharu Kubo

IPC分类号： H04N5/345 ,  H04N5/372 ,  H04N5/3728 ,  H04N3/15

CPC分类号： H04N3/1575 ,  H01L27/14856 ,  H04N3/1537

摘要： A solid-state imaging device is provided which employs CCDs as vertical shift registers and a horizontal shift register for vertically and horizontally scanning and reading out a large number of photoelectric elements arrayed in a two-dimensional plane. The imaging device is characterized in that the photoelectric elements of each column arranged between the vertical shift registers are alternately connected to the right and left vertical shift registers. This results in the resolution of the device being enhanced sharply.

摘要翻译： 提供了一种使用CCD作为垂直移位寄存器的固态成像装置和用于垂直和水平扫描并读出排列在二维平面中的大量光电元件的水平移位寄存器。 成像装置的特征在于，布置在垂直移位寄存器之间的每列的光电元件交替地连接到左右垂直移位寄存器。 这导致设备的分辨率急剧增加。

公开(公告)号：US4301477A

公开(公告)日：1981-11-17

申请号：US120115

申请日：1980-02-11

申请人： Iwao Takemoto ,  Masaharu Kubo ,  Shinya Ohba ,  Shuhei Tanaka ,  Masakazu Aoki

发明人： Iwao Takemoto ,  Masaharu Kubo ,  Shinya Ohba ,  Shuhei Tanaka ,  Masakazu Aoki

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/365 ,  H04N5/374 ,  H04N5/30 ,  H04N3/14

CPC分类号： H04N5/2173 ,  H01L27/14643 ,  H04N3/1568

摘要： In a solid-state imaging device comprising photodiodes arranged in a two-dimensional array, vertical and horizontal switching MOS transistors for selecting the photodiodes, vertical and horizontal scanning circuits for supplying scanning pulses to the gate electrodes of the vertical and horizontal switching MOS transistors respectively, a signal switching gate MOS transistor is connected between a signal output terminal and a horizontal signal output line connecting in common the horizontal switching MOS transistors.

摘要翻译： 在包括以二维阵列布置的光电二极管的固态成像装置中，用于选择光电二极管的垂直和水平切换MOS晶体管，分别向垂直和水平开关MOS晶体管的栅电极提供扫描脉冲的垂直和水平扫描电路 信号切换栅极MOS晶体管连接在水平开关MOS晶体管共同连接的信号输出端子和水平信号输出线之间。

公开(公告)号：US4209806A

公开(公告)日：1980-06-24

申请号：US928734

申请日：1978-07-27

申请人： Norio Koike ,  Iwao Takemoto ,  Toshiyuki Akiyama ,  Haruhisa Ando ,  Shinya Ohba ,  Masatada Horiuchi ,  Masaharu Kubo

发明人： Norio Koike ,  Iwao Takemoto ,  Toshiyuki Akiyama ,  Haruhisa Ando ,  Shinya Ohba ,  Masatada Horiuchi ,  Masaharu Kubo

IPC分类号： H01L27/088 ,  H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/372 ,  H04N5/374 ,  H04N3/14 ,  H01L27/14 ,  H01L29/78

CPC分类号： H01L27/14643 ,  H01L27/088

摘要： In a solid-state imaging device wherein a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors are comprised in a major surface region of an N (or P)-type semiconductor body, a solid-state imaging device characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body, that the switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, the vertical scanning circuit being integrated in still another impurity layer, and that predetermined voltages are applied to electrodes disposed on the respective impurity layers.

摘要翻译： 在其中多个光电转换元件，用于寻址光电转换元件的水平和垂直扫描电路以及水平和垂直开关晶体管的固态成像器件包括在N（或P）型半导体的主表面区域中 其特征在于，在所述半导体主体的主表面区域设置有彼此隔离的多个P（或N）型杂质层，所述开关晶体管和所述光电转换元件被集成 在一个杂质层中，水平扫描电路集成在另一个杂质层中，垂直扫描电路集成在另一个杂质层中，并且预定电压施加到设置在各个杂质层上的电极。