公开(公告)号：US09633892B2

公开(公告)日：2017-04-25

申请号：US12410643

申请日：2009-03-25

申请人： Shunpei Yamazaki ,  Eriko Nishida ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Eriko Nishida ,  Takashi Shimazu

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： A method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced even if a single crystal semiconductor substrate including crystal defects is used. A first oxide film is formed on a single crystal semiconductor substrate; the first oxide film is removed; a surface of the single crystal semiconductor substrate from which the first oxide film is removed is irradiated with laser light; a second oxide film is formed on the single crystal semiconductor substrate; an embrittled region is formed in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with ions through the second oxide film; bonding the second oxide film and the semiconductor substrate so as to face each other; and the single crystal semiconductor substrate is separated at the embrittled region by heat treatment to obtain a single crystal semiconductor layer bonded to the semiconductor substrate.

公开(公告)号：US08530332B2

公开(公告)日：2013-09-10

申请号：US12410649

申请日：2009-03-25

申请人： Shunpei Yamazaki ,  Eriko Nishida ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Eriko Nishida ,  Takashi Shimazu

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L21/84 ,  H01L29/458 ,  H01L29/66772 ,  H01L29/78621

摘要： An object is to provide an SOI substrate with excellent characteristics even in the case where a single crystal semiconductor substrate having crystal defects is used. Another object is to provide a semiconductor device using such an SOI substrate. A single crystal semiconductor layer is formed by an epitaxial growth method over a surface of a single crystal semiconductor substrate. The single crystal semiconductor layer is subjected to first thermal oxidation treatment to form a first oxide film. A surface of the first oxide film is irradiated with ions, whereby the ions are introduced to the single crystal semiconductor layer. The single crystal semiconductor layer and a base substrate are bonded with the first oxide film interposed therebetween. The single crystal semiconductor layer is divided at a region where the ions are introduced by performing thermal treatment, so that the single crystal semiconductor layer is partly left over the base substrate. The single crystal semiconductor layer left over the base substrate is irradiated with laser light. The single crystal semiconductor layer left over the base substrate is subjected to second thermal oxidation treatment to form a second oxide film. Then, the second oxide film is removed.

摘要翻译： 目的是提供具有优异特性的SOI衬底，即使在使用具有晶体缺陷的单晶半导体衬底的情况下也是如此。 另一个目的是提供一种使用这种SOI衬底的半导体器件。 通过外延生长法在单晶半导体衬底的表面上形成单晶半导体层。 对单晶半导体层进行第一热氧化处理以形成第一氧化物膜。 用离子照射第一氧化膜的表面，由此将离子引入单晶半导体层。 单晶半导体层和基底基板与第一氧化膜接合。 通过进行热处理，将单晶半导体层分割在引入离子的区域，使得单晶半导体层部分残留在基底基板上。 用激光照射留在基底基板上的单晶半导体层。 离开基底基板的单晶半导体层进行第二次热氧化处理，形成第二氧化膜。 然后，除去第二氧化膜。

公开(公告)号：US08021958B2

公开(公告)日：2011-09-20

申请号：US12410654

申请日：2009-03-25

申请人： Shunpei Yamazaki ,  Eriko Nishida ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Eriko Nishida ,  Takashi Shimazu

IPC分类号： H01L21/78

CPC分类号： H01L21/76254

摘要： A method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced is provided. An oxide film containing halogen is formed on each of surfaces of a single crystal semiconductor substrate and of a semiconductor substrate provided with a single crystal semiconductor layer separated from the single crystal semiconductor substrate, whereby impurities that exist on the surfaces of and inside the substrates are decreased. In addition, the single crystal semiconductor layer provided over the semiconductor substrate is irradiated with a laser beam, whereby crystallinity of the single crystal semiconductor layer is improved and planarity is improved.

摘要翻译： 提供了制造其中单晶半导体层的晶体缺陷减小的SOI衬底的方法。 在单晶半导体基板的表面和设置有与单晶半导体基板分离的单晶半导体层的半导体基板的各表面上形成含有卤素的氧化物膜，由此存在于基板的表面和内部的杂质为 减少。 此外，用半导体衬底上的单晶半导体层照射激光束，从而提高单晶半导体层的结晶度，提高平面度。

公开(公告)号：US20090261449A1

公开(公告)日：2009-10-22

申请号：US12410649

申请日：2009-03-25

申请人： Shunpei Yamazaki ,  Eriko Nishida ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Eriko Nishida ,  Takashi Shimazu

IPC分类号： H01L27/12 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/84 ,  H01L29/458 ,  H01L29/66772 ,  H01L29/78621

摘要： An object is to provide an SOI substrate with excellent characteristics even in the case where a single crystal semiconductor substrate having crystal defects is used. Another object is to provide a semiconductor device using such an SOI substrate. A single crystal semiconductor layer is formed by an epitaxial growth method over a surface of a single crystal semiconductor substrate. The single crystal semiconductor layer is subjected to first thermal oxidation treatment to form a first oxide film. A surface of the first oxide film is irradiated with ions, whereby the ions are introduced to the single crystal semiconductor layer. The single crystal semiconductor layer and a base substrate are bonded with the first oxide film interposed therebetween. The single crystal semiconductor layer is divided at a region where the ions are introduced by performing thermal treatment, so that the single crystal semiconductor layer is partly left over the base substrate. The single crystal semiconductor layer left over the base substrate is irradiated with laser light. The single crystal semiconductor layer left over the base substrate is subjected to second thermal oxidation treatment to form a second oxide film. Then, the second oxide film is removed.

摘要翻译： 目的是提供具有优异特性的SOI衬底，即使在使用具有晶体缺陷的单晶半导体衬底的情况下也是如此。 另一个目的是提供一种使用这种SOI衬底的半导体器件。 通过外延生长法在单晶半导体衬底的表面上形成单晶半导体层。 对单晶半导体层进行第一热氧化处理以形成第一氧化物膜。 用离子照射第一氧化膜的表面，由此将离子引入单晶半导体层。 单晶半导体层和基底基板与第一氧化膜接合。 通过进行热处理，将单晶半导体层分割在引入离子的区域，使得单晶半导体层部分残留在基底基板上。 用激光照射留在基底基板上的单晶半导体层。 留在基底基板上的单晶半导体层进行第二次热氧化处理，形成第二氧化膜。 然后，除去第二氧化膜。

公开(公告)号：US08912541B2

公开(公告)日：2014-12-16

申请号：US12848397

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Miyuki Hosoba ,  Eriko Nishida

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Miyuki Hosoba ,  Eriko Nishida

IPC分类号： H01L29/12 ,  H01L27/12 ,  H01L29/45

CPC分类号： H01L29/45 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124

摘要： One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT.

摘要翻译： 本发明的一个目的是增加半导体器件的开口率。 像素部分和驱动电路设置在一个基板上。 像素部中的第一薄膜晶体管（TFT）包括：在基板上的栅电极层; 栅电极层上的栅极绝缘层; 栅极绝缘层上的氧化物半导体层; 氧化物半导体层上的源极和漏极电极层; 栅极绝缘层，氧化物半导体层，源极和漏极电极层上的与氧化物半导体层的一部分接触的保护绝缘层; 以及保护绝缘层上的像素电极层。 像素部分具有透光性。 此外，驱动电路中的第二TFT的源极和漏极电极层的材料与第一TFT的材料不同。

公开(公告)号：US08946051B2

公开(公告)日：2015-02-03

申请号：US12410669

申请日：2009-03-25

申请人： Shunpei Yamazaki ,  Eriko Nishida

发明人： Shunpei Yamazaki ,  Eriko Nishida

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/762 ,  H01L21/02 ,  H01L21/316

CPC分类号： H01L21/76254 ,  H01L21/02057 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： It is an object to provide a method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced even when a single crystal semiconductor substrate in which crystal defects exist is used. Such an SOI substrate can be manufactured through the steps of forming a single crystal semiconductor layer which has an extremely small number of defects over a single crystal semiconductor substrate by an epitaxial growth method; forming an oxide film on the single crystal semiconductor substrate by thermal oxidation treatment; introducing ions into the single crystal semiconductor substrate through the oxide film; bonding the single crystal semiconductor substrate into which the ions are introduced and a semiconductor substrate to each other; causing separation by heat treatment; and performing planarization treatment on the single crystal semiconductor layer provided over the semiconductor substrate.

摘要翻译： 本发明的目的是提供一种SOI衬底的制造方法，即使使用存在晶体缺陷的单晶半导体衬底，单晶半导体层的晶体缺陷也被降低。 可以通过外延生长法在单晶半导体衬底上形成具有极少数缺陷的单晶半导体层的步骤来制造这种SOI衬底; 通过热氧化处理在单晶半导体衬底上形成氧化膜; 通过氧化膜将离子引入单晶半导体衬底; 将引入离子的单晶半导体衬底和半导体衬底彼此接合; 引起热处理分离; 对设置在半导体基板上的单晶半导体层进行平坦化处理。

公开(公告)号：US08629432B2

公开(公告)日：2014-01-14

申请号：US12683681

申请日：2010-01-07

申请人： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

发明人： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L21/36

CPC分类号： H01L29/78696 ,  C23C14/086 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02592 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693 ,  H04M1/0266

摘要： A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability. Film deposition is performed using an oxide semiconductor target containing an insulator (an insulating oxide, an insulating nitride, silicon oxynitride, aluminum oxynitride, or the like), typically SiO2, so that the semiconductor device in which the Si-element concentration in the thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from a gate electrode is realized.

公开(公告)号：US08492756B2

公开(公告)日：2013-07-23

申请号：US12683695

申请日：2010-01-07

申请人： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

发明人： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

IPC分类号： H01L29/24 ,  H01L29/22 ,  H01L21/34

CPC分类号： H01L29/16 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/78618 ,  H01L29/7869

摘要： An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitride film.

摘要翻译： 本发明的目的是提供一种包括具有氧化物半导体层并具有高电特性的薄膜晶体管的半导体器件。 在沟道形成区域中使用包含SiO x的氧化物半导体层，为了降低与使用具有低电阻的金属材料形成的源极和漏极电极层的接触电阻，源极和漏极电极层之间提供源极和漏极区域 和包含SiOx的氧化物半导体层。 源极和漏极区域使用不包括SiO x或氮氧化物膜的氧化物半导体层形成。

公开(公告)号：US20120325650A1

公开(公告)日：2012-12-27

申请号：US13603502

申请日：2012-09-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US08319218B2

公开(公告)日：2012-11-27

申请号：US12897160

申请日：2010-10-04

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Takashi Shimazu

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.

摘要翻译： 目的在于提供一种具有新的结构的氧化物半导体层，其优选用于半导体器件。 或者，另一个目的是提供一种使用具有新颖结构的氧化物半导体层的半导体器件。 氧化物半导体层包括主要为非晶质的非晶区域和在表面附近含有In2Ga2ZnO7晶体的晶体区域，其中晶粒取向为使得c轴相对于表面几乎垂直。 或者，半导体器件使用这种氧化物半导体层。