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公开(公告)号:US20140269098A1
公开(公告)日:2014-09-18
申请号:US13830207
申请日:2013-03-14
Applicant: Silicon Storage Technology, Inc.
Inventor: Hieu Van TRAN , Anh LY , Thuan VU , Hung Quoc NGUYEN
IPC: G11C16/12
Abstract: An improved method and apparatus for programming advanced nanometer flash memory cells is disclosed.
Abstract translation: 公开了用于编程高级纳米闪存单元的改进的方法和装置。
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2.TRANSISTOR DESIGN FOR USE IN ADVANCED NANOMETER FLASH MEMORY DEVICES 有权
Title translation: 用于高级NANOMETER闪存存储器件的晶体管设计公开(公告)号:US20140282348A1
公开(公告)日:2014-09-18
申请号:US13830267
申请日:2013-03-14
Applicant: Silicon Storage Technology, Inc.
Inventor: Hung Quoc NGUYEN , Hieu Van TRAN , Hung Thanh NGUYEN , Anh LY , Thuan VU
IPC: G06F17/50
CPC classification number: G11C16/08 , G06F17/5081 , G11C7/062 , G11C8/10 , G11C11/1673 , G11C13/004 , G11C16/26 , G11C16/28
Abstract: Improved PMOS and NMOS transistor designs for sensing circuitry use in advanced nanometer flash memory devices are disclosed.
Abstract translation: 公开了用于高级纳米闪存器件中的感测电路的改进的PMOS和NMOS晶体管设计。
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公开(公告)号:US20140281611A1
公开(公告)日:2014-09-18
申请号:US13830246
申请日:2013-03-14
Applicant: Silicon Storage Technology, Inc.
Inventor: Hung Quoc NGUYEN , Hieu Van TRAN , Hung Thanh NGUYEN
IPC: G06F1/32
CPC classification number: G06F1/32 , G11C5/14 , G11C7/08 , G11C7/1072 , G11C7/20 , G11C7/222 , G11C2207/065 , G11C2207/2227
Abstract: An improved method and apparatus for performing power management in a memory device is disclosed.
Abstract translation: 公开了一种用于在存储器件中进行功率管理的改进方法和装置。
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