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    Fabrication method of semiconductor package
    2.
    发明授权
    Fabrication method of semiconductor package 有权
    半导体封装的制造方法

    公开(公告)号：US08895366B2

    公开(公告)日：2014-11-25

    申请号：US14190635

    申请日：2014-02-26

    Applicant: Siliconware Precision Industries Co., Ltd.

    Inventor： Wen-Home Huang ,  Wen-Tsung Tseng ,  Chang-Fu Lin ,  Ho-Yi Tsai ,  Cheng-Hsu Hsiao

    IPC: H01L21/44 ,  H01L21/48 ,  H01L21/56 ,  H01L29/06 ,  H01L23/31

    CPC classification number: H01L21/561 ,  H01L23/3128 ,  H01L23/3142 ,  H01L29/0657 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    Abstract: A semiconductor package and a fabrication method thereof are disclosed. The fabrication method includes the steps of providing a semiconductor chip having an active surface and a non-active surface opposing to the active surface, roughening a peripheral portion of the non-active surface so as to divide the non-active surface into the peripheral portion formed with a roughened structure and a non-roughened central portion, mounting the semiconductor chip on a chip carrier via a plurality of solder bumps formed on the active surface, forming an encapsulant on the chip carrier to encapsulate the semiconductor chip. The roughened structure formed on the peripheral portion of the non-active surface of the semiconductor chip can reinforce the bonding between the semiconductor chip and the encapsulant, and the non-roughened central portion of the non-active surface of the semiconductor chip can maintain the structural strength of the semiconductor chip.

    Abstract translation: 公开了半导体封装及其制造方法。 该制造方法包括以下步骤：提供具有与活性表面相对的活性表面和非活性表面的半导体芯片，粗糙化非活性表面的周边部分，以将非活性表面划分成周边部分 形成有粗糙结构和非粗糙化的中心部分，通过形成在有源表面上的多个焊料凸块将半导体芯片安装在芯片载体上，在芯片载体上形成密封剂以封装半导体芯片。 形成在半导体芯片的非活性表面的周边部分上的粗糙结构可以加强半导体芯片和密封剂之间的接合，并且半导体芯片的非活性表面的非粗糙化的中心部分可以保持 半导体芯片的结构强度。

    Package structure and fabrication method thereof
    4.
    发明授权
    Package structure and fabrication method thereof 有权

    公开(公告)号：US10242972B2

    公开(公告)日：2019-03-26

    申请号：US14986149

    申请日：2015-12-31

    Applicant: Siliconware Precision Industries Co., Ltd.

    Inventor： Lu-Yi Chen ,  Chang-Lun Lu ,  Shih-Ching Chen ,  Guang-Hwa Ma ,  Cheng-Hsu Hsiao

    IPC: H01L23/58 ,  H01L21/78 ,  H01L25/10 ,  H01L21/683 ,  H01L23/538 ,  H01L23/31 ,  H01L25/03

    Abstract: A package structure is provided, which includes: a dielectric layer having opposite first and second surfaces; a circuit sub-layer formed in the dielectric layer; an electronic element disposed on the first surface of the dielectric layer and electrically connected to the circuit sub-layer; a plurality of conductive posts formed on the first surface of the dielectric layer and electrically connected to the circuit sub-layer; and an encapsulant formed on the first surface of the dielectric layer and encapsulating the electronic element and the conductive posts. Upper surfaces of the conductive posts are exposed from the encapsulant so as to allow another electronic element to be disposed on the conductive posts and electrically connected to the circuit sub-layer through the conductive posts, thereby overcoming the conventional drawback that another electronic element can only be disposed on a lower side of a package structure and improving the functionality of the package structure.

    FABRICATION METHOD OF SEMICONDUCTOR PACKAGE
    5.
    发明申请
    FABRICATION METHOD OF SEMICONDUCTOR PACKAGE 有权
    半导体封装的制造方法

    公开(公告)号：US20140179067A1

    公开(公告)日：2014-06-26

    申请号：US14190635

    申请日：2014-02-26

    Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.

    Inventor： Wen-Home Huang ,  Wen-Tsung Tseng ,  Chang-Fu Lin ,  Ho-Yi Tsai ,  Cheng-Hsu Hsiao

    IPC: H01L21/56

    CPC classification number: H01L21/561 ,  H01L23/3128 ,  H01L23/3142 ,  H01L29/0657 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    Abstract: A semiconductor package and a fabrication method thereof are disclosed. The fabrication method includes the steps of providing a semiconductor chip having an active surface and a non-active surface opposing to the active surface, roughening a peripheral portion of the non-active surface so as to divide the non-active surface into the peripheral portion formed with a roughened structure and a non-roughened central portion, mounting the semiconductor chip on a chip carrier via a plurality of solder bumps formed on the active surface, forming an encapsulant on the chip carrier to encapsulate the semiconductor chip. The roughened structure formed on the peripheral portion of the non-active surface of the semiconductor chip can reinforce the bonding between the semiconductor chip and the encapsulant, and the non-roughened central portion of the non-active surface of the semiconductor chip can maintain the structural strength of the semiconductor chip.

    Abstract translation: 公开了半导体封装及其制造方法。 该制造方法包括以下步骤：提供具有与活性表面相对的活性表面和非活性表面的半导体芯片，粗糙化非活性表面的周边部分，以将非活性表面划分成周边部分 形成有粗糙结构和非粗糙化的中心部分，通过形成在有源表面上的多个焊料凸块将半导体芯片安装在芯片载体上，在芯片载体上形成密封剂以封装半导体芯片。 形成在半导体芯片的非活性表面的周边部分上的粗糙结构可以加强半导体芯片和密封剂之间的接合，并且半导体芯片的非活性表面的非粗糙化的中心部分可以保持 半导体芯片的结构强度。

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