Abstract:
An electronic module is provided, including an electronic element and a strengthening layer formed on a side surface of the electronic element but not formed on an active surface of the electronic element so as to strengthen the structure of the electronic module. Therefore, the electronic element is prevented from being damaged when the electronic module is picked and placed.
Abstract:
An electronic package is provided, which includes: a first circuit structure; a plurality of first electronic elements disposed on a surface of the first circuit structure; at least a first conductive element formed on the surface of the first circuit structure; and a first encapsulant formed on the surface of the first circuit structure and encapsulating the first electronic elements and the first conductive element, with a portion of the first conductive element exposed from the first encapsulant. By directly disposing the electronic elements having high I/O functionality on the circuit structure, the present disclosure eliminates the need of a packaging substrate having a core layer, thereby reducing the thickness of the electronic package. The present disclosure further provides a method for fabricating the electronic package.
Abstract:
A semiconductor substrate is provided, including a substrate body having a lateral surface, and a protruding structure extending outward from the lateral surface. The semiconductor substrate distributes stresses generated during a manufacturing process through the protruding structure, and is thus prevented from delamination or being cracked. An electronic package having the semiconductor substrate is also provided.
Abstract:
A chip structure is provided, which includes: a substrate having a plurality of conductive pads formed on a surface thereof; a first copper layer formed on each of the conductive pads; a nickel layer formed on the first copper layer; a second copper layer formed on the nickel layer; and a tin layer formed on the second copper layer, thereby effectively reducing stresses.
Abstract:
A substrate structure is provided, which includes a substrate body having a plurality of conductive pads, and a plurality of first conductive bumps and a plurality of second conductive bumps disposed on the conductive pads. Each of the second conductive bumps is less in width than each of the first conductive bumps, and is of a height with respect to the substrate body greater than a height of each of the first conductive bumps with respect to the substrate body. Therefore, the height difference between the first pre-solder layer and the second pre-solder layer after a reflow process can be compensated, and the first conductive bumps and the second conductive bumps thus have a uniform height.
Abstract:
An electronic package is provided, which includes: a first circuit structure; a plurality of first electronic elements disposed on a surface of the first circuit structure; at least a first conductive element formed on the surface of the first circuit structure; and a first encapsulant formed on the surface of the first circuit structure and encapsulating the first electronic elements and the first conductive element, with a portion of the first conductive element exposed from the first encapsulant. By directly disposing the electronic elements having high I/O functionality on the circuit structure, the present disclosure eliminates the need of a packaging substrate having a core layer, thereby reducing the thickness of the electronic package. The present disclosure further provides a method for fabricating the electronic package.
Abstract:
A semiconductor substrate is provided, including a substrate body, a plurality of conductive through holes penetrating the substrate body, and at least one pillar disposed in the substrate body with the at least one pillar being free from penetrating the substrate body. When the semiconductor substrate is heated, the at least one pillar adjusts the expansion of upper and lower sides of the substrate body. Therefore, the upper and lower sides of the substrate body have substantially the same thermal deformation, and the substrate body is prevented from warpage.
Abstract:
A substrate structure is provided, which includes a substrate body having a plurality of conductive pads, and a plurality of first conductive bumps and a plurality of second conductive bumps disposed on the conductive pads. Each of the second conductive bumps is less in width than each of the first conductive bumps, and is of a height with respect to the substrate body greater than a height of each of the first conductive bumps with respect to the substrate body. Therefore, the height difference between the first pre-solder layer and the second pre-solder layer after a reflow process can be compensated, and the first conductive bumps and the second conductive bumps thus have a uniform height.
Abstract:
A semiconductor interposer is provided, which includes: a substrate body having a surface defined with an inner area and a peripheral area around the inner area; a plurality of conductive posts embedded in the substrate body and each having one end exposed from the surface of the substrate body; a passivation layer formed on the surface of the substrate body and having a peripheral portion formed in the peripheral area, a plurality of ring-shaped portions formed around peripheries of the exposed ends of the conductive posts in the inner area and a plurality of strip-shaped portions formed between the ring-shaped portions for connecting the ring-shaped portions; and a UBM layer formed on the exposed end of each of the conductive posts and extending on the ring-shaped portion around the periphery of the exposed end of the conductive post, thereby effectively reducing stresses to prevent warping of the semiconductor interposer.
Abstract:
A semiconductor interposer is provided, which includes: a substrate body having a surface defined with an inner area and a peripheral area around the inner area; a plurality of conductive posts embedded in the substrate body and each having one end exposed from the surface of the substrate body; a passivation layer formed on the surface of the substrate body and having a peripheral portion formed in the peripheral area, a plurality of ring-shaped portions formed around peripheries of the exposed ends of the conductive posts in the inner area and a plurality of strip-shaped portions formed between the ring-shaped portions for connecting the ring-shaped portions; and a UBM layer formed on the exposed end of each of the conductive posts and extending on the ring-shaped portion around the periphery of the exposed end of the conductive post, thereby effectively reducing stresses to prevent warping of the semiconductor interposer.