公开(公告)号：US20160056318A1

公开(公告)日：2016-02-25

申请号：US14780473

申请日：2014-03-26

Applicant: SOITEC ,  FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

Inventor： Cecile Aulnette ,  Rainer Krause ,  Frank Dimroth ,  Matthias Grave ,  Eric Guiot ,  Eric Mazaleyrat ,  Charlotte Drazek

IPC: H01L31/0443 ,  H01L31/028 ,  H01L31/0693 ,  H01L31/054 ,  H01L31/0687

CPC classification number: H01L31/0443 ,  H01L27/1421 ,  H01L31/052 ,  H01L31/0687 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

Abstract: This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell structure (3420), comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.

Abstract translation: 本公开涉及一种用于支撑聚光器光伏电池结构（3420）的太阳能电池组件结构，其包括半导体结构和二极管，其中所述半导体结构包括第一半导体区域，其至少一部分用于将集中器光伏电池结构 以及用于在第二半导体区域内或其上实现二极管的第二半导体区域，并且其中用于放置集中器光伏电池结构和第二半导体区域的第一半导体区域的部分不是垂直重叠的。

公开(公告)号：US20150027519A1

公开(公告)日：2015-01-29

申请号：US14387518

申请日：2013-03-13

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Chantal Arena ,  Frank Dimroth ,  Andreas W. Bett

IPC: H01L31/0725 ,  H01L31/18

CPC classification number: H01L31/0725 ,  C30B29/06 ,  C30B33/06 ,  H01L31/03046 ,  H01L31/0687 ,  H01L31/1844 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a first substrate, providing a second substrate having a lower surface and an upper surface, forming at least one first solar cell layer on the first substrate to obtain a first wafer structure, forming at least one second solar cell layer on the upper surface of the second substrate to obtain a second wafer structure, and bonding the first wafer structure to the second wafer structure, wherein the at least one first solar cell layer is bonded to the lower surface of the second substrate and removing the first substrate.

Abstract translation: 本发明涉及一种用于制造多结太阳能电池器件的方法，包括以下步骤：提供第一衬底，提供具有下表面和上表面的第二衬底，在第一衬底上形成至少一个第一太阳能电池层 以获得第一晶片结构，在所述第二衬底的上表面上形成至少一个第二太阳能电池层以获得第二晶片结构，并将所述第一晶片结构接合到所述第二晶片结构，其中所述至少一个第一太阳能电池 将单元层结合到第二基板的下表面并除去第一基板。

公开(公告)号：US11430910B2

公开(公告)日：2022-08-30

申请号：US16074348

申请日：2017-02-01

Applicant: Soitec

Inventor： Cécile Aulnette ,  Frank Dimroth ,  Eduard Oliva

IPC: H01L31/044 ,  H01L31/18 ,  H01L31/056 ,  H01L31/02 ,  H01L31/0735

Abstract: An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2, preferably below 1 mOhm·cm2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 1 mOhm·cm2.

公开(公告)号：US20150083202A1

公开(公告)日：2015-03-26

申请号：US14386952

申请日：2013-03-03

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Chantal Arena ,  Frank Dimroth ,  Andreas W. Bett

IPC: H01L31/0725 ,  H01L31/18

CPC classification number: H01L31/0725 ,  C30B29/06 ,  C30B33/06 ,  H01L31/03046 ,  H01L31/0687 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1864 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a first engineered substrate; providing a second substrate; forming at least one first solar cell layer on the first engineered substrate to obtain a first wafer structure; forming at least one second solar cell layer on the second substrate to obtain a second wafer structure; bonding the first wafer structure to the second wafer structure; detaching the first engineered substrate; removing the second substrate; and bonding a third substrate to the at least one first solar cell layer.

Abstract translation: 本发明涉及一种用于制造多结太阳能电池器件的方法，包括以下步骤：提供第一工程衬底; 提供第二基板; 在所述第一工程衬底上形成至少一个第一太阳能电池层以获得第一晶片结构; 在所述第二基板上形成至少一个第二太阳能电池层以获得第二晶片结构; 将所述第一晶片结构接合到所述第二晶片结构; 拆卸第一工程衬底; 去除所述第二基板; 以及将第三衬底接合到所述至少一个第一太阳能电池层。

公开(公告)号：US09954139B2

公开(公告)日：2018-04-24

申请号：US14780409

申请日：2014-03-26

Applicant: Soitec ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.

Inventor： Rainer Krause ,  Cecile Aulnette ,  Eric Mazaleyrat ,  Frank Dimroth ,  Eric Guiot

IPC: H01L33/00 ,  H01L21/67 ,  H01L21/683 ,  H01L31/18 ,  H01L31/02 ,  H01L31/028 ,  H01L21/762 ,  H01L31/047 ,  H01L31/024 ,  H01L31/0304

CPC classification number: H01L33/0079 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76275 ,  H01L31/02008 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/047 ,  H01L31/1876 ,  H01L31/1892 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68386 ,  H01L2223/54426 ,  Y02E10/50 ,  Y02P70/521

Abstract: This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.

公开(公告)号：US20150122313A1

公开(公告)日：2015-05-07

申请号：US14387524

申请日：2013-03-13

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Chantal Arena ,  Matteo Piccin ,  Frank Dimroth ,  Matthias Grave

IPC: H01L31/0735 ,  H01L31/18 ,  H01L31/02 ,  H01L31/047

CPC classification number: H01L31/0735 ,  C30B29/06 ,  C30B33/06 ,  H01L31/02 ,  H01L31/03046 ,  H01L31/047 ,  H01L31/0687 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a first substrate with a lower surface and an upper surface; providing a second substrate with a lower surface and an upper surface; bonding the first substrate to the second substrate at the upper surface of the first substrate and the lower surface of the second substrate; and subsequently forming at least one first solar cell layer on the lower surface of the first substrate and at least one second solar cell layer at the upper surface of the second substrate.

Abstract translation: 本发明涉及一种制造多结太阳能电池器件的方法，包括以下步骤：提供具有下表面和上表面的第一基底; 提供具有下表面和上表面的第二基底; 在第一基板的上表面和第二基板的下表面处将第一基板接合到第二基板; 并且随后在所述第一基板的下表面上形成至少一个第一太阳能电池层和在所述第二基板的上表面处形成至少一个第二太阳能电池层。

公开(公告)号：US20150059832A1

公开(公告)日：2015-03-05

申请号：US14387662

申请日：2013-03-13

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Chantal Arena ,  Frank Dimroth ,  Matthias Grave

IPC: H01L31/0725 ,  H01L31/0735 ,  H01L31/18

CPC classification number: H01L31/0725 ,  C30B29/06 ,  C30B33/06 ,  H01L31/03046 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a final base substrate; providing a first engineered substrate comprising a first zipper layer and a first seed layer; providing a second substrate; transferring the first seed layer to the final base substrate; forming at least one first solar cell layer on the first seed layer after transferring the first seed layer to the final base substrate, thereby obtaining a first wafer structure; forming at least one second solar cell layer on the second substrate, thereby obtaining a second wafer structure; and bonding the first and the second wafer structure to each other.

Abstract translation: 本发明涉及一种用于制造多结太阳能电池器件的方法，包括以下步骤：提供最终的基底; 提供包括第一拉链层和第一种子层的第一工程衬底; 提供第二基板; 将第一种子层转移到最终的基底; 在将所述第一种子层转移到所述最终基底基板之后，在所述第一种子层上形成至少一个第一太阳能电池层，从而获得第一晶片结构; 在所述第二基板上形成至少一个第二太阳能电池层，从而获得第二晶片结构; 以及将所述第一和第二晶片结构彼此接合。

公开(公告)号：US10361326B2

公开(公告)日：2019-07-23

申请号：US14780473

申请日：2014-03-26

Applicant: Soitec

Inventor： Cécile Aulnette ,  Rainer Krause ,  Frank Dimroth ,  Eric Guiot ,  Eric Mazaleyrat ,  Charlotte Drazek

IPC: H01L31/0443 ,  H01L31/028 ,  H01L31/0693 ,  H01L31/054 ,  H01L31/0687 ,  H01L27/142 ,  H01L31/052

Abstract: This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.

公开(公告)号：US20160043254A1

公开(公告)日：2016-02-11

申请号：US14780409

申请日：2014-03-26

Applicant: SOITEC ,  FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

Inventor： Rainer Krause ,  Cecile Aulnette ,  Eric Mazaleyrat ,  Frank Dimroth ,  Eric Guiot

IPC: H01L31/047 ,  H01L31/0304 ,  H01L31/02 ,  H01L31/028 ,  H01L31/18 ,  H01L31/024

CPC classification number: H01L33/0079 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76275 ,  H01L31/02008 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/047 ,  H01L31/1876 ,  H01L31/1892 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68386 ,  H01L2223/54426 ,  Y02E10/50 ,  Y02P70/521

Abstract: This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.

Abstract translation: 本公开涉及多个光伏电池的制造方法，包括以下步骤：获得彼此相距第一距离的多个光伏电池; 将拉伸材料附接到所述多个光伏电池; 以及拉伸所述拉伸材料使得所述多个光伏电池彼此之间产生第二距离，其中所述第二距离大于所述第一距离。

公开(公告)号：US20190355867A1

公开(公告)日：2019-11-21

申请号：US16074348

申请日：2017-02-01

Applicant: SOITEC

Inventor： Cécile Aulnette ,  Frank Dimroth ,  Eduard Oliva

IPC: H01L31/18 ,  H01L31/056 ,  H01L31/02 ,  H01L31/0735

Abstract: An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2, preferably below 1 mOhm·cm2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 1 mOhm·cm2.