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公开(公告)号：US08035117B2
公开(公告)日：2011-10-11
申请号：US11484233
申请日：2006-07-10
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition elements. The dopant ions absorb some or all of the light from the LED's active layer, pumping the dopant ion electrons to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green, blue and UV light, such that the LED emits green, blue, red and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state lasers having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth of transition elements.
摘要翻译： 在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。 掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子电子泵送到更高的能量状态。 电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。 铬离子吸收紫外光，激发离子上的电子到更高的能量状态。 当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色，蓝色和紫外光的有源层，使得LED发射绿色，蓝色，红色和紫外光，结合以产生白光。 或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。 本发明还能够在各种色调上提供可调LED。 本发明也适用于具有一个或多个有源层发射紫外光的固态激光器，其中激光生长在掺杂有一个或多个稀土过渡元素的蓝宝石衬底上。
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公开(公告)号：US07202506B1
公开(公告)日：2007-04-10
申请号：US09528262
申请日：2000-03-17
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.
摘要翻译： 在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。 掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子上的电子泵送到更高的能量状态。 电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。 铬离子吸收紫外光，激发离子上的电子到更高的能量状态。 当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色和蓝色和紫外线的有源层，使得LED发射绿色，蓝色，红色光和UV光，其组合以产生白光。 或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。 本发明还能够在各种色调上提供可调LED。 本发明也适用于具有一个或多个发射紫外光的有源层的固体激光器，其中激光生长在掺杂有一种或多种稀土或过渡元素的蓝宝石衬底上。
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公开(公告)号：US07084436B2
公开(公告)日：2006-08-01
申请号：US10815426
申请日：2004-03-31
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.
摘要翻译： 在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。 掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子上的电子泵送到更高的能量状态。 电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。 铬离子吸收紫外光，激发离子上的电子到更高的能量状态。 当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色和蓝色和紫外线的有源层，使得LED发出绿色，蓝色，红色光和UV光，其组合以产生白光。 或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。 本发明还能够在各种色调上提供可调LED。 本发明也适用于具有一个或多个发射紫外光的有源层的固体激光器，其中激光生长在掺杂有一种或多种稀土或过渡元素的蓝宝石衬底上。
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公开(公告)号：US08829546B2
公开(公告)日：2014-09-09
申请号：US11353647
申请日：2006-02-13
申请人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault , Adam W. Saxler
发明人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault , Adam W. Saxler
IPC分类号： H01L33/02 , H01L33/08 , H01L33/30 , H01L33/46 , H01S5/40 , H01L33/34 , H01L27/15 , H01L33/50 , H01L25/075
CPC分类号： H01L33/08 , H01L25/0756 , H01L27/15 , H01L33/025 , H01L33/30 , H01L33/343 , H01L33/465 , H01L33/502 , H01L2224/8592 , H01L2924/0002 , H01S5/405 , H01S5/4087 , H01L2924/00
摘要： A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. The active region emits light at a predetermined wavelength in response to an electrical bias across the doped layers. An absorption layer of semiconductor material is included that is integral to said emitter structure and doped with at least one rare earth or transition element. The absorption layer absorbs at least some of the light emitted from the active region and re-emits at least one different wavelength of light. A substrate is included with the emitter structure and absorption layer disposed on the substrate.
摘要翻译： 一种固态发光器件，包括具有半导体材料的有源区的发射极结构和在该有源区的相对侧上的一对相对掺杂的半导体材料层。 响应于穿过掺杂层的电偏压，有源区域以预定波长发光。 包括与所述发射极结构成一体并掺杂有至少一种稀土或过渡元素的半导体材料的吸收层。 吸收层吸收从有源区域发射的至少一些光并且再发射至少一个不同波长的光。 发射体结构和衬底上设置的吸收层包括衬底。
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公开(公告)号：US06885036B2
公开(公告)日：2005-04-26
申请号：US10606431
申请日：2003-06-25
申请人： Eric J. Tarsa , Brian Thibeault , James Ibbetson , Michael Mack
发明人： Eric J. Tarsa , Brian Thibeault , James Ibbetson , Michael Mack
摘要： An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer, improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintaining the enhanced current injection. The invention is particularly applicable to LEDs having insulating substrates but can also reduce the series resistance of LEDs having conductive substrates. The improved structures comprise conductive fingers that form cooperating conductive paths that ensure that current spreads from the p-type and n-type contacts into the fingers and uniformly spreads though the oppositely doped layers. The current then spreads to the active layer to uniformly inject electrons and holes throughout the active layer, which recombine to emit light.
摘要翻译： 一种具有改进的电流扩展结构的LED，可以增强电流注入到LED的有源层，从而提高其功率和光通量。 当前的扩展结构可以用于比常规LED更大的LED，同时保持增强的电流注入。 本发明特别适用于具有绝缘基板的LED，但也可以降低具有导电基板的LED的串联电阻。 改进的结构包括形成协调的导电路径的导电指状物，其确保电流从p型和n型触点扩散到指状物中并且通过相对掺杂的层均匀地扩散。 电流然后扩散到有源层，以在整个有源层中均匀地注入电子和空穴，其重新发光。
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公开(公告)号：US06614056B1
公开(公告)日：2003-09-02
申请号：US09721352
申请日：2000-11-21
申请人： Eric J. Tarsa , Brian Thibeault , James Ibbetson , Michael Mack
发明人： Eric J. Tarsa , Brian Thibeault , James Ibbetson , Michael Mack
IPC分类号： H01L29205
摘要： An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer, improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintaining the enhanced current injection. The invention is particularly applicable to LEDs having insulating substrates but can also reduce the series resistance of LEDs having conductive substrates. The improved structures comprise conductive fingers that form cooperating conductive paths that ensure that current spreads from the p-type and n-type contacts into the fingers and uniformly spreads though the oppositely doped layers. The current then spreads to the active layer to uniformly inject electrons and holes throughout the active layer, which recombine to emit light.
摘要翻译： 一种具有改进的电流扩展结构的LED，可以增强电流注入到LED的有源层，从而提高其功率和光通量。 当前的扩展结构可以用于比常规LED更大的LED，同时保持增强的电流注入。 本发明特别适用于具有绝缘基板的LED，但也可以降低具有导电基板的LED的串联电阻。 改进的结构包括形成协调的导电路径的导电指状物，其确保电流从p型和n型触点扩散到指状物中并且通过相对掺杂的层均匀地扩散。 电流然后扩散到有源层，以在整个有源层中均匀地注入电子和空穴，其重新发光。
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公开(公告)号：US20060255347A1
公开(公告)日：2006-11-16
申请号：US11484233
申请日：2006-07-10
申请人： Steven DenBaars , Eric Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
发明人： Steven DenBaars , Eric Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.
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公开(公告)号：US20070120129A1
公开(公告)日：2007-05-31
申请号：US11353647
申请日：2006-02-13
申请人： Steven DenBaars , Eric Tarsa , Michael Mack , Bernd Keller , Brian Thibeault , Adam Saxler
发明人： Steven DenBaars , Eric Tarsa , Michael Mack , Bernd Keller , Brian Thibeault , Adam Saxler
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/0756 , H01L27/15 , H01L33/025 , H01L33/30 , H01L33/343 , H01L33/465 , H01L33/502 , H01L2224/8592 , H01L2924/0002 , H01S5/405 , H01S5/4087 , H01L2924/00
摘要： A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. The active region emits light at a predetermined wavelength in response to an electrical bias across the doped layers. An absorption layer of semiconductor material is included that is integral to said emitter structure and doped with at least one rare earth or transition element. The absorption layer absorbs at least some of the light emitted from the active region and re-emits at least one different wavelength of light. A substrate is included with the emitter structure and absorption layer disposed on the substrate.
摘要翻译： 一种固态发光器件，包括具有半导体材料的有源区的发射极结构和在该有源区的相对侧上的一对相对掺杂的半导体材料层。 响应于穿过掺杂层的电偏压，有源区域以预定波长发光。 包括与所述发射极结构成一体并掺杂有至少一种稀土或过渡元素的半导体材料的吸收层。 吸收层吸收从有源区域发射的至少一些光并且再发射至少一个不同波长的光。 发射体结构和衬底上设置的吸收层包括衬底。
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9.发明授权Enhanced light extraction in LEDs through the use of internal and external optical elements 有权通过使用内部和外部光学元件在LED中增强光提取公开(公告)号：US06657236B1
公开(公告)日：2003-12-02
申请号：US09727803
申请日：2000-11-28
申请人： Brian Thibeault , Michael Mack , Steven DenBaars
发明人： Brian Thibeault , Michael Mack , Steven DenBaars
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L33/22 , H01L33/44 , H01L2933/0091 , Y10S977/712 , Y10S977/834
摘要： This invention describes new LEDs having light extraction structures on or within the LED to increase its efficiency. The new light extraction structures provide surfaces for reflecting, refracting or scattering light into directions that are more favorable for the light to escape into the package. The structures can be arrays of light extraction elements or disperser layers. The light extraction elements can have many different shapes and are placed in many locations to increase the efficiency of the LED over conventional LEDs. The disperser layers provide scattering centers for light and can be placed in many locations as well. The new LEDs with arrays of light extraction elements are fabricated with standard processing techniques making them highly manufacturable at costs similar to standard LEDs. The new LEDs with disperser layers are manufactured using new methods and are also highly manufacturable.
摘要翻译： 本发明描述了在LED上或LED内部具有光提取结构以提高其效率的新型LED。 新的光提取结构提供用于将光反射，折射或散射到更有利于光逃逸到包装中的方向的表面。 该结构可以是光提取元件或分散层的阵列。 光提取元件可以具有许多不同的形状并且被放置在许多位置以提高LED相对于常规LED的效率。 分散层提供光的散射中心，并且也可以放置在许多位置。 具有光提取元件阵列的新型LED采用标准处理技术制造，使得它们以与标准LED相似的成本高度可制造。 具有分散层的新型LED使用新的方法制造，并且也是高度可制造的。
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10.发明授权Enhanced light extraction in LEDs through the use of internal and external optical elements 有权通过使用内部和外部光学元件在LED中增强光提取公开(公告)号：US06821804B2
公开(公告)日：2004-11-23
申请号：US10665595
申请日：2003-09-17
申请人： Brian Thibeault , Michael Mack , Steven DenBaars
发明人： Brian Thibeault , Michael Mack , Steven DenBaars
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L33/22 , H01L33/44 , H01L2933/0091 , Y10S977/712 , Y10S977/834
摘要： This invention describes new LEDs having light extraction structures on or within the LED to increase its efficiency. The new light extraction structures provide surfaces for reflecting, refracting or scattering light into directions that are more favorable for the light to escape into the package. The structures can be arrays of light extraction elements or disperser layers. The light extraction elements can have many different shapes and are placed in many locations to increase the efficiency of the LED over conventional LEDs. The disperser layers provide scattering centers for light and can be placed in many locations as well. The new LEDs with arrays of light extraction elements are fabricated with standard processing techniques making them highly manufacturable at costs similar to standard LEDs. The new LEDs with disperser layers are manufactured using new methods and are also highly manufacturable.
摘要翻译： 本发明描述了在LED上或LED内部具有光提取结构以提高其效率的新型LED。 新的光提取结构提供用于将光反射，折射或散射到更有利于光逃逸到包装中的方向的表面。 该结构可以是光提取元件或分散层的阵列。 光提取元件可以具有许多不同的形状并且被放置在许多位置以提高LED相对于常规LED的效率。 分散层提供光的散射中心，并且也可以放置在许多位置。 具有光提取元件阵列的新型LED采用标准处理技术制造，使得它们以与标准LED相似的成本高度可制造。 具有分散层的新型LED使用新的方法制造，并且也是高度可制造的。
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