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公开(公告)号：US20210217618A1
公开(公告)日：2021-07-15
申请号：US17219320
申请日：2021-03-31
发明人： Nobuaki TAKAHASHI , Hitoshi MIURA , Koji NEISHI , Ryuji KATAYAMA , Yusuke MORI , Masayuki IMANISHI
摘要： The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.
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公开(公告)号：US20220002904A1
公开(公告)日：2022-01-06
申请号：US17359949
申请日：2021-06-28
发明人： Yusuke MORI , Masashi YOSHIMURA , Masayuki IMANISHI , Akira KITAMOTO , Junichi TAKINO , Tomoaki SUMI , Yoshio OKAYAMA
摘要： A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.
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公开(公告)号：US20200263317A1
公开(公告)日：2020-08-20
申请号：US16783229
申请日：2020-02-06
发明人： Yusuke MORI , Masayuki IMANISHI , Masashi YOSHIMURA , Kousuke MURAKAMI , Shinsuke KOMATSU , Masahiro TADA , Yoshio OKAYAMA
摘要： A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.
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公开(公告)号：US20190271096A1
公开(公告)日：2019-09-05
申请号：US16243321
申请日：2019-01-09
摘要： A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.
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公开(公告)号：US20200255975A1
公开(公告)日：2020-08-13
申请号：US16776647
申请日：2020-01-30
发明人： Yusuke MORI , Masashi YOSHIMURA , Masayuki IMANISHI , Akira KITAMOTO , Junichi TAKINO , Tomoaki SUMI
摘要： A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.
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6.发明申请公开(公告)号：US20180094361A1
公开(公告)日：2018-04-05
申请号：US15724909
申请日：2017-10-04
发明人： Yusuke MORI , Masashi YOSHIMURA , Mamoru IMADE , Masayuki IMANISHI , Akira KITAMOTO , Masashi ISEMURA
CPC分类号： C30B29/403 , C30B25/165 , C30B25/18 , H01L21/02389 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides a method for producing a Group III nitride crystal that can produce a Group III nitride crystal of high quality with few defects such as crack, dislocation, and the like by vapor phase epitaxy. In order to achieve the above object, the method for producing a Group III nitride crystal of the present invention includes a step of: causing Group III element-containing gas 111a to react with nitrogen-containing gas 203a and 203b to generate a Group III nitride crystal 204, wherein in the Group III nitride crystal generation step, the reaction is performed in the presence of a carbon-containing substance.
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公开(公告)号：US20170314157A1
公开(公告)日：2017-11-02
申请号：US15584756
申请日：2017-05-02
发明人： Yusuke MORI , Masashi YOSHIMURA , Mamoru IMADE , Masayuki IMANISHI , Masatomo SHIBATA , Takehiro YOSHIDA
CPC分类号： C30B25/02 , C30B25/20 , C30B29/406
摘要： A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10−5 Å; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.
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公开(公告)号：US20220056614A1
公开(公告)日：2022-02-24
申请号：US17479516
申请日：2021-09-20
发明人： Yusuke MORI , Masashi YOSHIMURA , Masayuki IMANISHI , Akira KITAMOTO , Junichi TAKINO , Tomoaki SUMI
摘要： A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.
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公开(公告)号：US20200017993A1
公开(公告)日：2020-01-16
申请号：US16508223
申请日：2019-07-10
发明人： Yusuke MORI , Masashi YOSHIMURA , Masayuki IMANISHI , Akira KITAMOTO , Junichi TAKINO , Tomoaki SUMI , Yoshio OKAYAMA
摘要： A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.
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公开(公告)号：US20200263320A1
公开(公告)日：2020-08-20
申请号：US16792386
申请日：2020-02-17
发明人： Yoshio OKAYAMA , Shinsuke KOMATSU , Masahiro TADA , Yusuke MORI , Masayuki IMANISHI , Masashi YOSHIMURA
摘要： An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.
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