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    Compound semiconductor switch circuit device
    1.
    发明授权
    Compound semiconductor switch circuit device 有权
    复合半导体开关电路器件

    公开(公告)号：US07498616B2

    公开(公告)日：2009-03-03

    申请号：US11412113

    申请日：2006-04-27

    申请人： Tetsuro Asano ,  Mikito Sakakibara ,  Yuichi Kusaka ,  Hidetoshi Ishihara

    发明人： Tetsuro Asano ,  Mikito Sakakibara ,  Yuichi Kusaka ,  Hidetoshi Ishihara

    IPC分类号： H01L31/0328

    CPC分类号： H01L29/7785 ,  H01L27/0605 ,  H03K17/693

    摘要： A gate wiring electrode is formed into a ladder-like pattern. Moreover, between source electrodes and drain electrodes in the entire Switch MMIC, the gate wiring electrodes are disposed. Furthermore, at a cross part between the gate wiring electrode and the source electrode or the drain electrode, a nitride film having a large relative dielectric constant and a polyimide or a hollow part having a small relative dielectric constant are disposed. Accordingly, a capacitance at the cross part is reduced. Thus, a second harmonic wave level can be lowered. Moreover, a leak of a high-frequency signal between the drain electrode and the source electrode can be prevented. Thus, a third harmonic level can be lowered. Consequently, distortion characteristics of the Switch MMIC can be significantly improved.

    摘要翻译： 栅极布线电极形成梯状图案。 此外，在整个开关MMIC中的源极和漏极之间设置栅极布线电极。 此外，在栅极配线电极与源电极或漏极之间的交叉部分设置相对介电常数大的氮化物膜和具有小的相对介电常数的聚酰亚胺或中空部。 因此，交叉部分的电容减小。 因此，可以降低二次谐波电平。 此外，可以防止漏极和源电极之间的高频信号的泄漏。 因此，可以降低三次谐波电平。 因此，可以显着提高开关MMIC的失真特性。

    Compound semiconductor switching circuit device
    2.
    发明授权
    Compound semiconductor switching circuit device 有权
    复合半导体开关电路器件

    公开(公告)号：US07358788B2

    公开(公告)日：2008-04-15

    申请号：US11412077

    申请日：2006-04-27

    申请人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara ,  Hidetoshi Ishihara

    发明人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara ,  Hidetoshi Ishihara

    IPC分类号： H03K5/08

    CPC分类号： H01L29/7785 ,  H01L21/8252 ,  H01L27/0266 ,  H01L27/0605

    摘要： Protecting elements are respectively connected between a control terminal Ctl and a ground terminal GND of a logic circuit L, between a point Cp and a ground terminal GND, and between a power supply terminal VDD and a ground terminal GND thereof. With this, an E-FET, constituting an inverter 70, and capacitors Ci and Cr can be protected from electrostatic breakdown due to external static electricity. Since the protecting element can be constituted by requisite components for the logic circuit, an additional step or structure is not especially required to provide the protecting element.

    摘要翻译： 保护元件分别连接在控制端子Ct1和逻辑电路L的接地端子GND之间，位于点Cp和接地端子GND之间，以及电源端子V DD端子和接地端子 GND。 由此，可以防止构成反相器70的电子FET，电容器Ci，Cr由于外部静电而受到静电破坏。 由于保护元件可以由用于逻辑电路的必需部件构成，所以不需要额外的步骤或结构来提供保护元件。

    Compound semiconductor switching circuit device
    3.
    发明申请
    Compound semiconductor switching circuit device 有权
    复合半导体开关电路器件

    公开(公告)号：US20060252651A1

    公开(公告)日：2006-11-09

    申请号：US11412077

    申请日：2006-04-27

    申请人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara ,  Hidetoshi Ishihara

    发明人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara ,  Hidetoshi Ishihara

    IPC分类号： H01L39/00

    CPC分类号： H01L29/7785 ,  H01L21/8252 ,  H01L27/0266 ,  H01L27/0605

    摘要： Protecting elements are respectively connected between a control terminal Ctl and a ground terminal GND of a logic circuit L, between a point Cp and a ground terminal GND, and between a power supply terminal VDD and a ground terminal GND thereof. With this, an E-FET, constituting an inverter 70, and capacitors Ci and Cr can be protected from electrostatic breakdown due to external static electricity. Since the protecting element can be constituted by requisite components for the logic circuit, an additional step or structure is not especially required to provide the protecting element.

    摘要翻译： 保护元件分别连接在控制端子Ct1和逻辑电路L的接地端子GND之间，位于点Cp和接地端子GND之间，以及电源端子V DD端子和接地端子 GND。 由此，可以防止构成反相器70的电子FET，电容器Ci，Cr由于外部静电而受到静电破坏。 由于保护元件可以由用于逻辑电路的必需部件构成，所以不需要额外的步骤或结构来提供保护元件。

    Compound semiconductor switch circuit device
    4.
    发明申请
    Compound semiconductor switch circuit device 有权

    公开(公告)号：US20060255403A1

    公开(公告)日：2006-11-16

    申请号：US11412113

    申请日：2006-04-27

    申请人： Tetsuro Asano ,  Mikito Sakakibara ,  Yuichi Kusaka ,  Hidetoshi Ishihara

    发明人： Tetsuro Asano ,  Mikito Sakakibara ,  Yuichi Kusaka ,  Hidetoshi Ishihara

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7785 ,  H01L27/0605 ,  H03K17/693

    摘要： A gate wiring electrode is formed into a ladder-like pattern. Moreover, between source electrodes and drain electrodes in the entire Switch MMIC, the gate wiring electrodes are disposed. Furthermore, at a cross part between the gate wiring electrode and the source electrode or the drain electrode, a nitride film having a large relative dielectric constant and a polyimide or a hollow part having a small relative dielectric constant are disposed. Accordingly, a capacitance at the cross part is reduced. Thus, a second harmonic wave level can be lowered. Moreover, a leak of a high-frequency signal between the drain electrode and the source electrode can be prevented. Thus, a third harmonic level can be lowered. Consequently, distortion characteristics of the Switch MMIC can be significantly improved.

    Compound semiconductor device
    5.
    发明授权
    Compound semiconductor device 有权
    复合半导体器件

    公开(公告)号：US07701032B2

    公开(公告)日：2010-04-20

    申请号：US11442600

    申请日：2006-05-30

    申请人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara

    发明人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara

    IPC分类号： H01L29/80

    CPC分类号： H01L27/0605 ,  H01L29/402 ,  H01L29/737 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812

    摘要： A separation element formed of one of a conduction region and a metal layer is placed between two elements in proximity to each other. The separation element is connected to a high resistance element and to a direct current terminal pad. A connection route extending from the direct current terminal pad to the separation element is a route in which a potential does not vibrate with high frequency. This results in a placement of a high frequency GND potential between the two elements, at least one of which is subjected to transmitting the high frequency signals, whereby leak of the high frequency signals can be prevented between the two elements.

    摘要翻译： 由导电区域和金属层之一形成的分离元件彼此靠近放置在两个元件之间。 分离元件连接到高电阻元件和直流端子焊盘。 从直流端子焊盘延伸到分离元件的连接路径是电位不以高频率振动的路径。 这导致在两个元件之间放置高频GND电位，其中至少一个被传送高频信号，从而可以防止两个元件之间的高频信号泄漏。

    Compound semiconductor device
    6.
    发明申请
    Compound semiconductor device 有权
    复合半导体器件

    公开(公告)号：US20060289963A1

    公开(公告)日：2006-12-28

    申请号：US11442600

    申请日：2006-05-30

    申请人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara

    发明人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara

    IPC分类号： H01L29/00

    CPC分类号： H01L27/0605 ,  H01L29/402 ,  H01L29/737 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812

    摘要： A separation element formed of one of a conduction region and a metal layer is placed between two elements in proximity to each other. The separation element is connected to a high resistance element and to a direct current terminal pad. A connection route extending from the direct current terminal pad to the separation element is a route in which a potential does not vibrate with high frequency. This results in a placement of a high frequency GND potential between the two elements, at least one of which is subjected to transmitting the high frequency signals, whereby leak of the high frequency signals can be prevented between the two elements.

    摘要翻译： 由导电区域和金属层之一形成的分离元件彼此靠近放置在两个元件之间。 分离元件连接到高电阻元件和直流端子焊盘。 从直流端子焊盘延伸到分离元件的连接路径是电位不以高频率振动的路径。 这导致在两个元件之间放置高频GND电位，其中至少一个被传送高频信号，从而可以防止两个元件之间的高频信号泄漏。