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    Semiconductor DNA sensing device and DNA sensing method
    1.
    发明申请
    Semiconductor DNA sensing device and DNA sensing method 审中-公开
    半导体DNA感测装置和DNA感测方法

    公开(公告)号：US20070207471A1

    公开(公告)日：2007-09-06

    申请号：US11514843

    申请日：2006-09-05

    申请人： Tetsuya Osaka ,  Daisuke Niwa ,  Norikazu Motohashi

    发明人： Tetsuya Osaka ,  Daisuke Niwa ,  Norikazu Motohashi

    IPC分类号： C12Q1/68 ,  C12M3/00 ,  H01L51/00

    CPC分类号： G01N27/4145 ,  Y10T436/143333

    摘要： A semiconductor DNA sensing device having a detection section is provided. The detection section comprises a structure of a probe DNA/a first organic monolayer/an insulating layer/a semiconductor. The field-effect transistor (FET) comprises a semiconductor substrate and a first insulator layer formed thereon as a reactive gate insulator, and the first insulating layer comprises silicon oxide or an inorganic oxide. The first organic monolayer formed on the first insulator layer comprises an organic molecule having a reactive functional group. The probe DNA contains 3 to 35 nucleotides, and this probe DNA is bonded to the first organic monolayer by the reactive functional group either directly or by an intervening crosslinker. The semiconductor DNA sensing device of the present invention is extremely effective as an on-chip, high-sensitivity, micro multi-DNA sensing device, and an integrated device produced by using such semiconductor DNA sensing device is capable of sensing a DNA including a mismatch sequence such as single nucleotide polymorphism, and such device is indispensable for an advanced medicine and personalized medicine.

    摘要翻译： 提供了具有检测部的半导体DNA感测装置。 检测部分包括探针DNA /第一有机单层/绝缘层/半导体的结构。 场效应晶体管（FET）包括半导体衬底和形成在其上的第一绝缘体层作为反应性栅极绝缘体，并且第一绝缘层包括氧化硅或无机氧化物。 形成在第一绝缘体层上的第一有机单层包含具有反应性官能团的有机分子。 探针DNA含有3至35个核苷酸，该探针DNA直接或通过中间交联剂通过反应性官能团与第一有机单层结合。 本发明的半导体DNA感测装置作为片上，高灵敏度的微多DNA感测装置是非常有效的，并且通过使用这种半导体DNA感测装置制造的集成装置能够感测包括不匹配的DNA 序列如单核苷酸多态性，这种装置对先进药物和个性化药物是必不可少的。

    Semiconductor sensing field effect transistor, semiconductor sensing device, semiconductor sensor chip and semiconductor sensing device
    2.
    发明授权
    Semiconductor sensing field effect transistor, semiconductor sensing device, semiconductor sensor chip and semiconductor sensing device 有权
    半导体感测场效应晶体管，半导体感测器件，半导体传感器芯片和半导体感测器件

    公开(公告)号：US07838912B2

    公开(公告)日：2010-11-23

    申请号：US11660514

    申请日：2005-03-11

    申请人： Daisuke Niwa ,  Ichiro Koiwa ,  Tetsuya Osaka

    发明人： Daisuke Niwa ,  Ichiro Koiwa ,  Tetsuya Osaka

    IPC分类号： C12Q1/00

    CPC分类号： G01N27/414

    摘要： A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode. In the semiconductor sensor chip and the semiconductor sensing device, the transistor chip, the source electrode terminal wiring and the drain electrode terminal wiring are sealed so as to expose an edge part which is not connected with the gate insulating layer of the transistor chip and the source electrode of the source electrode terminal wiring, and an edge part which is not connected with the drain electrode of the drain electrode terminal wiring.

    摘要翻译： 半导体感测场效应晶体管使用形成在栅极绝缘层上的有机单分子膜。 在半导体感测场效应晶体管和半导体感测装置中，栅极绝缘层具有堆叠结构，其中第二氧化硅层通过氮化硅层堆叠在第一氧化硅层上。 半导体传感器芯片和半导体感测装置设置有场效应晶体管芯片，其中栅极绝缘层，源电极和漏电极集成在硅板上，源极端子布线与源极连接，以及 漏极端子布线与漏电极连接。 在半导体传感器芯片和半导体感测装置中，晶体管芯片，源极端子布线和漏极端子布线被密封，以暴露未与晶体管芯片的栅极绝缘层连接的边缘部分和 源电极端子配线的源电极以及未与漏电极端子配线的漏电极连接的边缘部。

    Semiconductor Sensing Field Effect Transistor, Semiconductor Sensing Device, Semiconductor Sensor Chip and Semiconductor Sensing Device
    3.
    发明申请
    Semiconductor Sensing Field Effect Transistor, Semiconductor Sensing Device, Semiconductor Sensor Chip and Semiconductor Sensing Device 有权
    半导体感测场效应晶体管，半导体感测装置，半导体传感器芯片和半导体感测装置

    公开(公告)号：US20080012049A1

    公开(公告)日：2008-01-17

    申请号：US11660514

    申请日：2005-03-11

    申请人： Daisuke Niwa ,  Tetsuya Osaka

    发明人： Daisuke Niwa ,  Tetsuya Osaka

    IPC分类号： H01L29/78

    CPC分类号： G01N27/414

    摘要： A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode. In the semiconductor sensor chip and the semiconductor sensing device, the transistor chip, the source electrode terminal wiring and the drain electrode terminal wiring are sealed so as to expose an edge part which is not connected with the gate insulating layer of the transistor chip and the source electrode of the source electrode terminal wiring, and an edge part which is not connected with the drain electrode of the drain electrode terminal wiring.

    摘要翻译： 半导体感测场效应晶体管使用形成在栅极绝缘层上的有机单分子膜。 在半导体感测场效应晶体管和半导体感测装置中，栅极绝缘层具有堆叠结构，其中第二氧化硅层通过氮化硅层堆叠在第一氧化硅层上。 半导体传感器芯片和半导体感测装置设置有场效应晶体管芯片，其中栅极绝缘层，源电极和漏电极集成在硅板上，源极端子布线与源极连接，以及 漏极端子布线与漏电极连接。 在半导体传感器芯片和半导体感测装置中，晶体管芯片，源极端子布线和漏极端子布线被密封，以暴露未与晶体管芯片的栅极绝缘层连接的边缘部分和 源电极端子配线的源电极以及未与漏电极端子配线的漏电极连接的边缘部。

    Catalyst for cathode of fuel cell, preparing method and fixing method thereof, and fuel cell including same
    4.
    发明申请
    Catalyst for cathode of fuel cell, preparing method and fixing method thereof, and fuel cell including same 审中-公开
    燃料电池阴极催化剂及其制备方法和固定方法以及包括其的燃料电池

    公开(公告)号：US20080102350A1

    公开(公告)日：2008-05-01

    申请号：US11976587

    申请日：2007-10-25

    申请人： Tetsuya Osaka ,  Toshiyuki Momma ,  Jong-Eun Park

    发明人： Tetsuya Osaka ,  Toshiyuki Momma ,  Jong-Eun Park

    IPC分类号： H01M4/86 ,  H01M4/88

    CPC分类号： H01M4/921 ,  H01M4/8846 ,  H01M4/923 ,  H01M8/1011 ,  H01M2004/8689 ,  Y02E60/523 ,  Y02P70/56

    摘要： A cathode catalyst for a fuel cell is inexpensive and has high durability against methanol. A method of manufacturing and fixing the cathode catalyst, and a fuel cell including it, are disclosed. The cathode catalyst includes a compound selected from the group consisting of PdSn, PdAu, PdCo, PdWO3, and mixtures thereof. The present invention can provide a non-platinum-based cathode catalyst as a substitute for a platinum catalyst, the cathode catalyst having a low cost and improved catalyst activity, thereby contributing to popular use of a fuel cell. In addition, since the cathode catalyst of the present invention has high durability against methanol and can thereby be used with a fuel in a high concentration, it can increase the energy density of a direct methanol fuel cell (DMFC).

    摘要翻译： 用于燃料电池的阴极催化剂是便宜的并且对甲醇具有高耐久性。 公开了制造和固定阴极催化剂的方法以及包括它的燃料电池。 阴极催化剂包括选自PdSn，PdAu，PdCo，PdWO 3 3的化合物及其混合物。 本发明可以提供非铂类阴极催化剂作为铂催化剂的替代物，阴极催化剂具有低成本和改进的催化剂活性，从而有助于燃料电池的普及使用。 此外，由于本发明的阴极催化剂对甲醇具有高耐久性，因此可以与高浓度的燃料一起使用，因此可以提高直接甲醇燃料电池（DMFC）的能量密度。

    Fuel cell
    5.
    发明申请
    Fuel cell 有权
    燃料电池

    公开(公告)号：US20070054174A1

    公开(公告)日：2007-03-08

    申请号：US11515871

    申请日：2006-09-06

    申请人： Tetsuya Osaka ,  Toshiyuki Momma ,  Jong-Eun Park

    发明人： Tetsuya Osaka ,  Toshiyuki Momma ,  Jong-Eun Park

    IPC分类号： H01M8/02 ,  H01M8/10 ,  H01M4/92

    CPC分类号： H01M8/1009 ,  H01M8/0258 ,  H01M8/026 ,  H01M8/04186 ,  H01M8/1011 ,  H01M2008/1095 ,  Y02E60/523

    摘要： A fuel cell includes a substrate having a pair of grooves, an electrolyte membrane lying on the substrate so as to define a pair of flow channels, and catalyst-bearing current collector layer sections disposed on the inner wall of the grooves or the inside surface of the electrolyte membrane defining the channels. A fuel liquid flows through the first channel to undergo anodic reaction, an oxidant liquid in the form of an aqueous hydrogen peroxide solution flows through the second channel to undergo cathodic reaction, and hydrogen ions traverse the electrolyte membrane.

    摘要翻译： 燃料电池包括具有一对槽的基板，位于基板上的电解质膜，以限定一对流动通道，以及设置在槽或内表面的内壁上的催化剂负载集流层部分 限定通道的电解质膜。 燃料液体流过第一通道进行阳极反应，过氧化氢水溶液形式的氧化剂液体流过第二通道进行阴极反应，氢离子穿过电解质膜。

    Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus
    6.
    发明授权
    Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus 失效
    磁记录介质，其制造方法以及磁记录和重放装置

    公开(公告)号：US07029772B2

    公开(公告)日：2006-04-18

    申请号：US09949018

    申请日：2001-09-10

    申请人： Hiroshi Sakai ,  Tetsuya Osaka

    发明人： Hiroshi Sakai ,  Tetsuya Osaka

    IPC分类号： G11B5/66 ,  G11B5/70

    CPC分类号： G11B5/667 ,  G11B5/66 ,  G11B5/7325 ,  G11B5/851

    摘要： A magnetic recording medium that enables enhancement of squareness ratio and Hn and exhibits excellent noise characteristics and thermal stability is disclosed. A production process for the medium, and a magnetic recording and reproducing apparatus are also disclosed. The magnetic recording medium including a substrate 1, a carbon-containing carbon undercoat film 2 formed thereon, and a perpendicular magnetic film 3, in which most of easy-magnetization axes are oriented vertically with respect to the substrate, formed on the undercoat film. The perpendicular magnetic film is formed through a plurality of sputtering operations using at least one element selected from Pt and Pd and through a plurality of sputtering operations using a Co-containing material.

    摘要翻译： 公开了能够提高矩形比和Hn并且显示出优异的噪声特性和热稳定性的磁记录介质。 还公开了介质的制造方法以及磁记录和再现装置。 包含基板1，形成在其上的含碳碳基底涂层膜2的磁记录介质以及在底涂层上形成大部分易磁化轴相对于基板垂直取向的垂直磁性膜3。 通过使用选自Pt和Pd中的至少一种元素和通过使用含Co材料的多次溅射操作的多次溅射操作形成垂直磁性膜。

    Magnetic recording medium
    8.
    发明授权
    Magnetic recording medium 失效
    磁记录介质

    公开(公告)号：US06274233B1

    公开(公告)日：2001-08-14

    申请号：US09276466

    申请日：1999-03-25

    申请人： Toshihiko Yoshikawa ,  Akira Sakawaki ,  Hiroshi Sakai ,  Tetsuya Osaka

    发明人： Toshihiko Yoshikawa ,  Akira Sakawaki ,  Hiroshi Sakai ,  Tetsuya Osaka

    IPC分类号： G11B566

    CPC分类号： G11B5/66 ,  Y10S428/90 ,  Y10T428/26 ,  Y10T428/265

    摘要： A magnetic recording medium comprising a substrate 1 having thereon an in-plane magnetic film 3 having a magnetic easy axis oriented in the in-plane direction with respect to the substrate and a vertical magnetic film 6 having a magnetic easy axis oriented perpendicularly to the substrate. The in-plane magnetic film 3 is disposed closer to the substrate 1 than the vertical magnetic film 6. In preferred embodiments, the magnetic recording medium may further comprise a separation film 4 disposed between the in-plane magnetic film 3 and the vertical magnetic film 6, a nonmagnetic intermediate layer 5 having an hcp structure disposed between the separation film 4 and the vertical magnetic film 6, and a protective film 7. The magnetic recording medium is adapted for use with a signal processing system generally used for in-plane magnetic recording media without modification of the signal processing system.

    摘要翻译： 一种磁记录介质，包括基板1，其上具有面向磁性薄膜3的平面磁性薄膜3，所述平面磁性薄膜3具有相对于基板在面内方向上定向的易磁化轴;垂直磁性膜6具有垂直于基板的易磁化轴 。 面内磁性膜3比垂直磁性膜6更靠近基板1.在优选实施例中，磁记录介质还可以包括设置在平面内的磁性膜3和垂直磁性膜之间的分离膜4 如图6所示，具有设置在分离膜4和垂直磁性膜6之间的hcp结构的非磁性中间层5和保护膜7.磁记录介质适用于通常用于面内磁性的信号处理系统 记录介质而不修改信号处理系统。