公开(公告)号：US20050040497A1

公开(公告)日：2005-02-24

申请号：US10878358

申请日：2004-06-29

申请人： Chisaki Takubo ,  Hiroji Yamada ,  Kazuhiro Mochizuki ,  Kenichi Tanaka ,  Tomonori Tanoue ,  Hiroyuki Uchiyama

发明人： Chisaki Takubo ,  Hiroji Yamada ,  Kazuhiro Mochizuki ,  Kenichi Tanaka ,  Tomonori Tanoue ,  Hiroyuki Uchiyama

IPC分类号： H01L21/331 ,  H01L21/306 ,  H01L29/04 ,  H01L29/06 ,  H01L29/737

CPC分类号： H01L29/7371 ,  H01L21/30612 ,  H01L29/045 ,  H01L29/0657

摘要： The technical subject of the invention is to inhibit disconnection of electrodes caused by a step and bursting caused by residual air. That is, an object of the present invention is to provide a semiconductor device capable of overcoming a drawback due to the shape of a concave portion present in the zinc blende type compound semiconductor substrate in which the area of the bottom is larger than the surface in the cross sectional shape, as well as a manufacturing method thereof. According to the invention, a hole or step present in the semiconductor substrate constituting the semiconductor device is formed into a normal mesa shape irrespective of the orientation of the crystals on the surface of the semiconductor substrate. Accordingly, the present invention uses a novel wet etching solution having an etching rate for a portion below the etching mask higher than that in the direction of the depth of the semiconductor substrate.

摘要翻译： 本发明的技术课题是抑制由残留空气引起的台阶和破裂引起的电极断开。 也就是说，本发明的目的是提供一种半导体器件，其能够克服存在于闪锌矿型化合物半导体衬底中的凹部的形状的缺陷，其中底部的面积大于其中的表面 横截面形状及其制造方法。 根据本发明，构成半导体器件的半导体衬底中存在的孔或台阶形成为正常的台面形状，而与半导体衬底的表面上的晶体取向无关。 因此，本发明使用对蚀刻掩模下方的蚀刻速度高于半导体衬底的深度方向的蚀刻速率的新型湿式蚀刻溶液。

公开(公告)号：US20070073448A1

公开(公告)日：2007-03-29

申请号：US11583885

申请日：2006-10-20

申请人： Chisaki Takubo ,  Hiroji Yamada ,  Kazuhiro Mochizuki ,  Kenichi Tanaka ,  Tomonori Tanoue ,  Hiroyuki Uchiyama

发明人： Chisaki Takubo ,  Hiroji Yamada ,  Kazuhiro Mochizuki ,  Kenichi Tanaka ,  Tomonori Tanoue ,  Hiroyuki Uchiyama

IPC分类号： G05D1/10

CPC分类号： H01L21/30617 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/66318 ,  H01L29/7371

摘要： A semiconductor device capable of overcoming a drawback due to the shape of a concave portion present in the zinc blende type compound semiconductor substrate in which the area of the bottom is larger than the surface in the cross sectional shape, as well as a manufacturing method thereof. A hole or step present in the semiconductor substrate constituting the semiconductor device is formed into a normal mesa shape irrespective of the orientation of the crystals on the surface of the semiconductor substrate. A wet etching solution having an etching rate for a portion below the etching mask higher than that in the direction of the depth of the semiconductor substrate is used.

摘要翻译： 一种半导体器件及其制造方法，其能够克服存在于闪锌矿型化合物半导体衬底中的凹部的形状的缺陷，其中底部的面积大于截面形状的表面，以及其制造方法 。 存在于构成半导体器件的半导体衬底中的孔或台阶形成为正常台面形状，而与半导体衬底的表面上的晶体取向无关。 使用对蚀刻掩模下方的蚀刻速率比半导体衬底的深度方向的蚀刻速度更高的湿蚀刻溶液。

公开(公告)号：US06984871B2

公开(公告)日：2006-01-10

申请号：US10441096

申请日：2003-05-20

申请人： Tomonori Tanoue ,  Kazuhiro Mochizuki ,  Hiroji Yamada

发明人： Tomonori Tanoue ,  Kazuhiro Mochizuki ,  Hiroji Yamada

IPC分类号： H01L27/082

CPC分类号： H01L29/66318 ,  H01L24/32 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/41708 ,  H01L29/7371 ,  H01L2924/1305 ,  H01L2924/15787 ,  H01L2924/00

摘要： A semiconductor device with high structural reliability and low parasitic capacitance is provided. In one example, the semiconductor device has a surface. The semiconductor device comprises a semiconductor region, wherein an emitter region, a base region, and a collector region are laminated from a side near a substrate of the semiconductor region; an insulating protection layer disposed on the surface; and a wiring layer disposed on the surface, the insulating protection layer forming a via hole from the side of the substrate of the semiconductor region, the via hole being formed to allow the wiring layer to make a contact to an electrode of the emitter region from a side of the substrate where the emitter region, the base region, and the collector region are laminated and where the semiconductor region is isolated.

摘要翻译： 提供具有高结构可靠性和低寄生电容的半导体器件。 在一个示例中，半导体器件具有表面。 半导体器件包括半导体区域，其中从半导体区域的衬底附近的一侧层叠发射极区域，基极区域和集电极区域; 设置在所述表面上的绝缘保护层; 以及设置在所述表面上的布线层，所述绝缘保护层从所述半导体区域的所述基板的侧面形成通孔，所述通孔形成为允许所述布线层与所述发射极区域的电极接触 衬底的一侧，其中发射极区域，基极区域和集电极区域被层叠并且半导体区域被隔离。

公开(公告)号：US07450789B2

公开(公告)日：2008-11-11

申请号：US11485294

申请日：2006-07-13

申请人： Kazuhiko Hosomi ,  Hiroji Yamada ,  Toshio Katsuyama ,  Yasuhiko Arakawa ,  Toshihiko Fukamachi

发明人： Kazuhiko Hosomi ,  Hiroji Yamada ,  Toshio Katsuyama ,  Yasuhiko Arakawa ,  Toshihiko Fukamachi

IPC分类号： G02B6/00

CPC分类号： G02B6/12004 ,  G01J3/26 ,  G01N21/4133 ,  G02B2006/1213 ,  G02B2006/12164

摘要： The present invention provides an ultra-mini and low cost refractive index measuring device applicable to biochemical measurements of an extremely minute amount of a sample. The refractive index measuring device uses a photonic crystal without any requirement of an external spectrograph or the like.The micro sensor device according to the present invention includes a light source emitting light with a single wavelength, a microcavity in which a resonant wavelength varies depending on a position thereof. A refractive index of a material to be measured is measured based on positional information by detecting a transmitting position of light changing in response to a change of a refractive index of the measured material. The micro sensor device according to the present invention enables measurement of a refractive index of a material to be measured without using a large-scale spectrograph.

摘要翻译： 本发明提供了一种适用于极微量样品的生物化学测量的超小型和低成本折射率测量装置。 折射率测量装置使用光子晶体，而不需要外部光谱仪等。 根据本发明的微型传感器装置包括发射具有单一波长的光的光源，其中谐振波长根据其位置而变化的微腔。 通过检测响应于测量材料的折射率的变化而变化的光的透射位置，基于位置信息来测量要测量的材料的折射率。 根据本发明的微型传感器装置能够在不使用大规模光谱仪的情况下测量待测材料的折射率。

公开(公告)号：US20070014505A1

公开(公告)日：2007-01-18

申请号：US11485294

申请日：2006-07-13

申请人： Kazuhiko Hosomi ,  Hiroji Yamada ,  Toshio Katsuyama ,  Yasuhiko Arakawa ,  Toshihiko Fukamachi

发明人： Kazuhiko Hosomi ,  Hiroji Yamada ,  Toshio Katsuyama ,  Yasuhiko Arakawa ,  Toshihiko Fukamachi

IPC分类号： G02B6/00

CPC分类号： G02B6/12004 ,  G01J3/26 ,  G01N21/4133 ,  G02B2006/1213 ,  G02B2006/12164

摘要： The present invention provides an ultra-mini and low cost refractive index measuring device applicable to biochemical measurements of an extremely minute amount of a sample. The refractive index measuring device uses a photonic crystal without any requirement of an external spectrograph or the like. The micro sensor device according to the present invention includes a light source emitting light with a single wavelength, a microcavity in which a resonant wavelength varies depending on a position thereof. A refractive index of a material to be measured is measured based on positional information by detecting a transmitting position of light changing in response to a change of a refractive index of the measured material. The micro sensor device according to the present invention enables measurement of a refractive index of a material to be measured without using a large-scale spectrograph.

摘要翻译： 本发明提供了一种适用于极微量样品的生物化学测量的超小型和低成本折射率测量装置。 折射率测量装置使用光子晶体，而不需要外部光谱仪等。 根据本发明的微型传感器装置包括发射具有单一波长的光的光源，其中谐振波长根据其位置而变化的微腔。 通过检测响应于测量材料的折射率的变化而变化的光的透射位置，基于位置信息来测量要测量的材料的折射率。 根据本发明的微型传感器装置能够在不使用大规模光谱仪的情况下测量待测材料的折射率。

公开(公告)号：US4829155A

公开(公告)日：1989-05-09

申请号：US933670

申请日：1986-11-21

申请人： Norifumi Fukutaka ,  Masatomo Kamata ,  Toru Watanabe ,  Koji Matsumoto ,  Tomoyuki Haga ,  Toshimitsu Yamagishi ,  Hiroji Yamada

发明人： Norifumi Fukutaka ,  Masatomo Kamata ,  Toru Watanabe ,  Koji Matsumoto ,  Tomoyuki Haga ,  Toshimitsu Yamagishi ,  Hiroji Yamada

IPC分类号： A45D2/24 ,  A45D2/36 ,  A45D4/10

CPC分类号： A45D2/36 ,  A45D2/24 ,  A45D4/10

摘要： A hair styler for winding hair thereon for curling, comprising a hollow sealed tubular member made of a metallic material having good thermal conductivity and defining a heat pipe having a heat dissipating hair winding portion. The tubular member contains a charge of a working fluid vaporizable at an operating temperature of 50.degree. C. to 70.degree. C. The outer surface of the heat dissipating portion of the heat pipe is covered with an elastic hair engagement member for preventing hair slippage. The heat receiving end portion of the heat pipe is exposed so as to be adapted to receive heat from a separate external heat source having a temperature range of 50.degree. C. to 120.degree. C. Thereby hair wound around the outer surface of the heat dissipating portion of the heat pipe forming the bobbin is heated by the condensation of the vaporized working fluid within the heat pipe.

摘要翻译： 一种用于卷曲头发的发型器，用于卷曲，包括由具有良好导热性的金属材料制成的中空密封管状构件，并且限定具有散热头发缠绕部分的热管。 管状部件含有可在50℃〜70℃的工作温度下蒸发的工作流体的电荷。热管的散热部的外表面覆盖有用于防止毛发滑动的弹性头发接合部件。 热管的热接收端部露出，以适应于从温度范围为50℃至120℃的单独的外部热源接收热量。因此，头发缠绕在散热外表面上 形成筒管的热管的一部分被蒸发的工作流体在热管内的冷凝物加热。

公开(公告)号：US06495914B1

公开(公告)日：2002-12-17

申请号：US09485400

申请日：2000-02-10

申请人： Kenji Sekine ,  Hiroji Yamada ,  Matsuo Yamasaki ,  Osamu Kagaya ,  Kiichi Yamashita

发明人： Kenji Sekine ,  Hiroji Yamada ,  Matsuo Yamasaki ,  Osamu Kagaya ,  Kiichi Yamashita

IPC分类号： H01L2334

CPC分类号： H01L25/50 ,  H01L23/3114 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15192 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00

摘要： A metal base substrate for mounting a plurality of bare semiconductor chip devices thereon has first and second main surfaces. The first main surface has formed thereon at least one projection, and at least two recesses in which the bare semiconductor chip devices are to be mounted. The depth of these recesses is smaller than the length of said projection, and the recesses have a higher surface smoothness than said main surfaces of said metal substrate. The metal base substrate is partially chemically etched to form the projection, and the first main surface of the substrate is mechanically worked to form at least the recesses. The conductive projection is isolated from the portion on which the bare semiconductor chip devices are mounted, of the base substrate, and the conductive projection acts as a terminal that can be electrically connected to the outside on the first and second main surfaces of the base substrate.

摘要翻译： 用于在其上安装多个裸半导体芯片器件的金属基底板具有第一和第二主表面。 第一主表面在其上形成有至少一个突起，以及至少两个凹部，裸露的半导体芯片器件将要安装在其中。 这些凹部的深度小于所述突起的长度，并且凹部具有比所述金属基底的所述主表面更高的表面平滑度。 金属基底部分地被化学蚀刻以形成突起，并且基板的第一主表面被机械加工以形成至少凹部。 导电突起与基底基板上裸露半导体芯片器件的部分隔离，并且导电突起用作可在基底基板的第一和第二主表面上电连接到外部的端子 。

公开(公告)号：US06492195B2

公开(公告)日：2002-12-10

申请号：US09734927

申请日：2000-12-13

申请人： Masaki Nakanishi ,  Susumu Sorimachi ,  Kiichi Yamashita ,  Hiroji Yamada ,  Kikuo Fukushima

发明人： Masaki Nakanishi ,  Susumu Sorimachi ,  Kiichi Yamashita ,  Hiroji Yamada ,  Kikuo Fukushima

IPC分类号： H01L2144

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L21/76256 ,  H01L23/481 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/32188 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13063 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012

摘要： Disclosed herein is a technique which performs the thinning of a wafer and the separation thereof from a support substrate with high yields and in a short time. Described specifically, a hole-free support substrate is bonded to a second surface of a support substrate having holes with an adhesive layer melted by heating so as to bloc the holes. A wafer is bonded to a first surface of the support substrate having the holes with an adhesive layer melted by solvent. The wafer is thinned by grinding and etching. The adhesive layer is melted by heating and the support substrate having the holes is slid with respect to the hole-free support substrate to thereby separate the support substrate having the holes from the hole-free support substrate. Further, the adhesive layer is melted by solvent from the holes defined in the support substrate having the holes to thereby separate the wafer from the support substrate having the holes. Since the separation of the hole-free support substrate from the support substrate having the holes depends on heating and sliding, it can be carried out in a short time. Since the adhesive layer is melted by solvent which enters through the holes, the separation of the wafer in a short time is allowed. Both work do not put a load on the wafer and hence damage is prevented from occurring.

摘要翻译： 本文公开了一种技术，其以高产率和短时间执行晶片的薄化和与支撑基板的分离。 具体地说，无孔支撑基板被粘合到具有孔的支撑基板的第二表面上，粘合层通过加热而熔化，以便将孔分配。 将晶片粘合到具有孔的支撑基板的第一表面上，其中粘合层被溶剂熔化。 通过研磨和蚀刻使晶片变薄。 通过加热熔化粘合剂层，并且具有孔的支撑基板相对于无孔支撑基板滑动，从而将具有孔的支撑基板与无孔支撑基板分离。 此外，粘合剂层通过溶剂从具有孔的支撑基板中限定的孔熔化，从而将晶片与具有孔的支撑基板分离。 由于无孔支撑基板与具有孔的支撑基板的分离取决于加热和滑动，所以可以在短时间内进行。 由于粘合剂层由通过孔进入的溶剂熔化，所以允许在短时间内分离晶片。 两种工作都不会对晶片造成负担，因此可以防止发生损坏。