Silicon dry etching method
    1.
    发明授权

    公开(公告)号:US12217969B2

    公开(公告)日:2025-02-04

    申请号:US17393208

    申请日:2021-08-03

    Applicant: ULVAC, Inc.

    Abstract: A silicon dry etching method of the invention, includes: preparing a silicon substrate; forming a mask pattern having an opening on the silicon substrate; forming a deposition layer on the silicon substrate in accordance with the mask pattern while introducing a first gas; carrying out a dry etching process with respect to the silicon substrate in accordance with the mask pattern while introducing a second gas, and thereby forming a recess pattern on a surface of the silicon substrate; and carrying out an ashing process with respect to the silicon substrate while introducing a third gas.

    Plasma processing device
    2.
    发明授权

    公开(公告)号:US12205795B2

    公开(公告)日:2025-01-21

    申请号:US17829144

    申请日:2022-05-31

    Applicant: ULVAC, INC.

    Abstract: A plasma processing device includes an inductively coupled plasma antenna including an input end and an output end, a series circuit including an additional inductor and a variable capacitor connected in series, and a controller that varies a capacitance of the variable capacitor. The input terminal is connected via an antenna matching device to an antenna power supply. The output terminal is connected to the additional inductor. The additional inductor is connected via the variable capacitor to ground.

    PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

    公开(公告)号:US20230290623A1

    公开(公告)日:2023-09-14

    申请号:US18118559

    申请日:2023-03-07

    Applicant: ULVAC, INC.

    Abstract: A method for processing a subject with plasma includes repeatedly outputting first pulses from a pulse generator to a first high-frequency power supply, intermittently outputting first high-frequency power from the first high-frequency power supply to a first electrode based on the first pulses to generate the plasma, detecting start of plasma generation caused by a present first pulse with a detector, calculating a delay period, being from rise of the present first pulse until the detector detects start of plasma generation, repeatedly outputting second pulses from the pulse generator to a second high-frequency power supply based on time at which the delay period has elapsed from rise of a first pulse output after the delay period is calculated, and outputting second high-frequency power from the second high-frequency power supply to a second electrode based on the second pulses to draw ions from the plasma to the subject.

    High-frequency power circuit, plasma treatment apparatus, and plasma treatment method

    公开(公告)号:US11665809B2

    公开(公告)日:2023-05-30

    申请号:US17634208

    申请日:2021-08-24

    Applicant: ULVAC, INC.

    CPC classification number: H05H1/46 H01J37/16 H01J37/244 H01Q1/26

    Abstract: A high-frequency power circuit includes a first antenna circuit and a second antenna circuit that are connected in parallel to a matching box connected to a high-frequency power supply. The first antenna circuit include a first antenna, a first distribution capacitor, and a first variable capacitor. The second antenna circuit includes a second antenna, a second distribution capacitor, and a second variable capacitor. A controller sets a capacitance of the first variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the first antenna and the first variable capacitor during plasma production to reduce this phase difference and sets a capacitance of the second variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the second antenna and the second variable capacitor during plasma production to reduce this phase difference.

    PLASMA PROCESSING DEVICE
    6.
    发明申请

    公开(公告)号:US20220392746A1

    公开(公告)日:2022-12-08

    申请号:US17829144

    申请日:2022-05-31

    Applicant: ULVAC, INC.

    Abstract: A plasma processing device includes an inductively coupled plasma antenna including an input end and an output end, a series circuit including an additional inductor and a variable capacitor connected in series, and a controller that varies a capacitance of the variable capacitor. The input terminal is connected via an antenna matching device to an antenna power supply. The output terminal is connected to the additional inductor. The additional inductor is connected via the variable capacitor to ground.

    HIGH-FREQUENCY POWER CIRCUIT, PLASMA TREATMENT APPARATUS, AND PLASMA TREATMENT METHOD

    公开(公告)号:US20220377870A1

    公开(公告)日:2022-11-24

    申请号:US17634208

    申请日:2021-08-24

    Applicant: ULVAC, INC.

    Abstract: A high-frequency power circuit includes a first antenna circuit and a second antenna circuit that are connected in parallel to a matching box connected to a high-frequency power supply. The first antenna circuit include a first antenna, a first distribution capacitor, and a first variable capacitor. The second antenna circuit includes a second antenna, a second distribution capacitor, and a second variable capacitor. A controller sets a capacitance of the first variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the first antenna and the first variable capacitor during plasma production to reduce this phase difference and sets a capacitance of the second variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the second antenna and the second variable capacitor during plasma production to reduce this phase difference.

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