公开(公告)号：US12217969B2

公开(公告)日：2025-02-04

申请号：US17393208

申请日：2021-08-03

Applicant: ULVAC, Inc.

Inventor： Kenta Doi ,  Toshiyuki Sakuishi ,  Toshiyuki Nakamura ,  Yasuhiro Morikawa

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308

Abstract: A silicon dry etching method of the invention, includes: preparing a silicon substrate; forming a mask pattern having an opening on the silicon substrate; forming a deposition layer on the silicon substrate in accordance with the mask pattern while introducing a first gas; carrying out a dry etching process with respect to the silicon substrate in accordance with the mask pattern while introducing a second gas, and thereby forming a recess pattern on a surface of the silicon substrate; and carrying out an ashing process with respect to the silicon substrate while introducing a third gas.

公开(公告)号：US12205795B2

公开(公告)日：2025-01-21

申请号：US17829144

申请日：2022-05-31

Applicant: ULVAC, INC.

Inventor： Taichi Suzuki ,  Yasuhiro Morikawa ,  Kenta Doi ,  Toshiyuki Nakamura

IPC: H01J37/32

Abstract: A plasma processing device includes an inductively coupled plasma antenna including an input end and an output end, a series circuit including an additional inductor and a variable capacitor connected in series, and a controller that varies a capacitance of the variable capacitor. The input terminal is connected via an antenna matching device to an antenna power supply. The output terminal is connected to the additional inductor. The additional inductor is connected via the variable capacitor to ground.

公开(公告)号：US10079133B2

公开(公告)日：2018-09-18

申请号：US15314772

申请日：2016-01-08

Applicant: ULVAC, INC.

Inventor： Takahide Murayama ,  Yasuhiro Morikawa ,  Toshiyuki Sakuishi

IPC: H01J17/04 ,  H05H1/46 ,  H05H1/38 ,  H05H1/24 ,  H01J37/32

CPC classification number: H01J37/321 ,  H01J17/04 ,  H01J37/32568 ,  H01J2237/0206 ,  H01L21/3065 ,  H05H1/38 ,  H05H1/46 ,  H05H2001/2468 ,  H05H2001/4652 ,  H05H2001/4667 ,  H05H2001/469

Abstract: A plasma processing device includes: a chamber; a flat-plate-shaped first electrode; a first high frequency power supply; a helical second electrode disposed outside the chamber and disposed to face the first electrode with a quartz plate forming an upper lid of the chamber therebetween; and a gas introducing unit, in which a second high frequency power supply and a third high frequency power supply are configured to be electrically connected to the second electrode, the second high frequency power supply being configured to apply an AC voltage of a second frequency to the second electrode, the third high frequency power supply being configured to apply an AC voltage of a third frequency to the second electrode, and the third frequency being higher than the second frequency; and two types of AC voltages are configured to be simultaneously applied.

公开(公告)号：US12020942B2

公开(公告)日：2024-06-25

申请号：US17728524

申请日：2022-04-25

Applicant: ULVAC, Inc.

Inventor： Taichi Suzuki ,  Yasuhiro Morikawa ,  Kenta Doi ,  Toshiyuki Nakamura

IPC: H01L21/3065 ,  B81C1/00 ,  C23C14/02 ,  C23C14/34 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/30655 ,  B81C1/00531 ,  B81C1/00619 ,  C23C14/021 ,  C23C14/34 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/014 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/3342

Abstract: An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.

公开(公告)号：US20220392746A1

公开(公告)日：2022-12-08

申请号：US17829144

申请日：2022-05-31

Applicant: ULVAC, INC.

Inventor： Taichi Suzuki ,  Yasuhiro Morikawa ,  Kenta Doi ,  Toshiyuki Nakamura

IPC: H01J37/32

Abstract: A plasma processing device includes an inductively coupled plasma antenna including an input end and an output end, a series circuit including an additional inductor and a variable capacitor connected in series, and a controller that varies a capacitance of the variable capacitor. The input terminal is connected via an antenna matching device to an antenna power supply. The output terminal is connected to the additional inductor. The additional inductor is connected via the variable capacitor to ground.

公开(公告)号：US11510320B2

公开(公告)日：2022-11-22

申请号：US16313847

申请日：2017-11-30

Applicant: ULVAC, INC.

Inventor： Muneyuki Sato ,  Yasuhiro Morikawa ,  Minoru Suzuki

IPC: H05K3/00 ,  H05K3/46

Abstract: A method of the invention is a method of processing a wiring substrate that includes a configuration in which conductors locally disposed on a substrate are coated with resin having inorganic members that form a filler and are dispersed in an organic member, the method including: removing the organic member from a surface layer side of the resin by use of an ashing method; and removing, by use of a wet cleaning method, the inorganic members remaining the surface layer side of the resin from which the organic member is removed.