公开(公告)号：US12040393B2

公开(公告)日：2024-07-16

申请号：US18075433

申请日：2022-12-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wen Su ,  Ming-Hua Chang ,  Shui-Yen Lu

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7787

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, ridges extending along a first direction on the buffer layer, gaps extending along the first direction between the ridges, a p-type semiconductor layer extending along a second direction on the ridges and inserted into the gaps, and a source electrode and a drain electrode adjacent to two sides of the p-type semiconductor layer. Preferably, the source electrode and the drain electrode are extending along the second direction and directly on top of the ridges.

公开(公告)号：US20170373191A1

公开(公告)日：2017-12-28

申请号：US15214429

申请日：2016-07-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tien-Chen Chan ,  Yi-Fan Li ,  Li-Wei Feng ,  Ming-Hua Chang ,  Yu-Shu Lin ,  Shu-Yen Chan

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L21/02164 ,  H01L21/0217 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for fabricating semiconductor device is disclosed. First, a fin-shaped structure is formed on a substrate, a first liner is formed on the substrate and the fin-shaped structure, a second liner is formed on the first liner, part of the second liner and part of the first liner are removed to expose a top surface of the fin-shaped structure, part of the first liner between the fin-shaped structure and the second liner is removed to form a recess, and an epitaxial layer is formed in the recess.

公开(公告)号：US09263579B2

公开(公告)日：2016-02-16

申请号：US14723447

申请日：2015-05-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Hua Chang ,  Chun-Yuan Wu ,  Chin-Cheng Chien ,  Tien-Wei Yu ,  Yu-Shu Lin ,  Szu-Hao Lai

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/30 ,  H01L29/66 ,  H01L29/165 ,  H01L21/306 ,  H01L21/324 ,  H01L29/08 ,  H01L29/161

CPC classification number: H01L29/7848 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3003 ,  H01L21/30604 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66636

Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.

公开(公告)号：US20150170916A1

公开(公告)日：2015-06-18

申请号：US14108369

申请日：2013-12-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tien-Wei Yu ,  Chun-Jen Chen ,  Tsung-Mu Yang ,  Ming-Hua Chang ,  Yu-Shu Lin ,  Chin-Cheng Chien

IPC: H01L21/02

CPC classification number: H01L21/02664 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02639 ,  H01L29/66795 ,  H01L29/7848

Abstract: A semiconductor process includes the steps of providing a substrate with fin structures formed thereon, performing an epitaxy process to grow an epitaxial structure on each fin structure, forming a conformal cap layer on each epitaxial structure, where adjacent conformal cap layers contact each other, and performing an etching process to separate contacting conformal cap layers.

Abstract translation: 一种半导体工艺包括以下步骤：提供具有在其上形成的鳍结构的衬底，执行外延工艺以在每个鳍结构上生长外延结构，在每个外延结构上形成共形盖层，其中相邻的保形盖层彼此接触，以及 执行蚀刻工艺以分离接触的保形盖层。

公开(公告)号：US12040392B2

公开(公告)日：2024-07-16

申请号：US18075427

申请日：2022-12-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wen Su ,  Ming-Hua Chang ,  Shui-Yen Lu

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

CPC classification number: H01L29/7786 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7787

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a patterned mask on the buffer layer; using the patterned mask to remove the buffer layer for forming ridges and a damaged layer on the ridges; removing the damaged layer; forming a barrier layer on the ridges; and forming a p-type semiconductor layer on the barrier layer.

公开(公告)号：US12002681B2

公开(公告)日：2024-06-04

申请号：US17515541

申请日：2021-10-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Hua Chang ,  Kun-Yuan Liao ,  Lung-En Kuo ,  Chih-Tung Yeh

IPC: H01L21/308 ,  H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L21/3086 ,  H01L21/30621 ,  H01L21/3081 ,  H01L21/3085 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786

Abstract: A fabricating method of a high electron mobility transistor includes providing a substrate. Then, a channel layer, an active layer, a P-type group III-V compound material layer, a metal compound material layer, a hard mask material layer and a patterned photoresist are formed to cover the substrate. Later, a dry etching process is performed to etch the hard mask material layer and the metal compound material layer to form a hard mask and a metal compound layer by taking the patterned photoresist as a mask. During the dry etching process, a spacer generated by by-products is formed to surround the patterned photoresist, the hard mask and the metal compound layer. After the dry etching process, the P-type group III-V compound material layer is etched by taking the spacer and the patterned photoresist as a mask.

公开(公告)号：US20230112917A1

公开(公告)日：2023-04-13

申请号：US17515541

申请日：2021-10-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Hua Chang ,  Kun-Yuan Liao ,  Lung-En Kuo ,  Chih-Tung Yeh

IPC: H01L21/308 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L21/306 ,  H01L29/66

Abstract: A fabricating method of a high electron mobility transistor includes providing a substrate. Then, a channel layer, an active layer, a P-type group III-V compound material layer, a metal compound material layer, a hard mask material layer and a patterned photoresist are formed to cover the substrate. Later, a dry etching process is performed to etch the hard mask material layer and the metal compound material layer to form a hard mask and a metal compound layer by taking the patterned photoresist as a mask. During the dry etching process, a spacer generated by by-products is formed to surround the patterned photoresist, the hard mask and the metal compound layer. After the dry etching process, the P-type group III-V compound material layer is etched by taking the spacer and the patterned photoresist as a mask.

公开(公告)号：US20220367693A1

公开(公告)日：2022-11-17

申请号：US17396793

申请日：2021-08-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Hua Chang ,  Po-Wen Su ,  Chih-Tung Yeh

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L21/311

Abstract: A semiconductor structure includes a substrate, a stacked structure on the substrate, an insulating layer on the stacked structure, a passivation layer on the insulating layer, and a contact structure through the passivation layer and the insulating layer and directly contacting the stacked structure. The insulating layer has an extending portion protruding from a sidewall of the passivation layer and adjacent to a surface of the stacked structure directly contacting the contact structure.

公开(公告)号：US20210249529A1

公开(公告)日：2021-08-12

申请号：US16809524

申请日：2020-03-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wen Su ,  Ming-Hua Chang ,  Shui-Yen Lu

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/66 ,  H01L29/06

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a patterned mask on the buffer layer; using the patterned mask to remove the buffer layer for forming ridges and a damaged layer on the ridges; removing the damaged layer; forming a barrier layer on the ridges; and forming a p-type semiconductor layer on the barrier layer.

公开(公告)号：US20150263170A1

公开(公告)日：2015-09-17

申请号：US14723447

申请日：2015-05-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Hua Chang ,  Chun-Yuan Wu ,  Chin-Cheng Chien ,  Tien-Wei Yu ,  Yu-Shu Lin ,  Szu-Hao Lai

IPC: H01L29/78 ,  H01L29/08 ,  H01L21/306 ,  H01L21/324 ,  H01L29/66 ,  H01L29/161

CPC classification number: H01L29/7848 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3003 ,  H01L21/30604 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66636

Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.

Abstract translation: 半导体工艺包括以下步骤。 在基板上形成两个栅极。 在栅极旁边的基板中形成凹部。 在凹部的表面上进行表面改性处理，以改变凹部的形状并改变表面的内容物。