公开(公告)号：US20140256151A1

公开(公告)日：2014-09-11

申请号：US13784846

申请日：2013-03-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chi-Sheng Chen ,  Shin-Chi Chen ,  Chih-Yueh Li ,  Ted Ming-Lang Guo ,  Bo-Syuan Lee ,  Tsung-Hsun Tsai ,  Yu-Chin Cheng

IPC: H01L21/308

CPC classification number: H01L21/308 ,  H01L21/31111 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659

Abstract: A method for removing silicon nitride material includes following steps. A substrate having at least a gate structure formed thereon is provided, and at least a silicon nitride hard mask is formed on top of the gate structure. A first removal is performed to remove a portion of the silicon nitride hard mask with a first phosphoric acid (H3PO4) solution. A second removal is subsequently performed to remove remnant silicon nitride hard mask with a second phosphoric acid solution. The first removal and the second removal are performed in-situ. A temperature of the second phosphoric acid solution is lower than a temperature of the first phosphoric acid solution.

Abstract translation: 一种除去氮化硅材料的方法包括以下步骤。 提供了至少形成有栅极结构的衬底，并且在栅极结构的顶部上形成至少一个氮化硅硬掩模。 执行第一次去除以用第一磷酸（H 3 PO 4）溶液去除一部分氮化硅硬掩模。 随后进行第二次去除以用第二种磷酸溶液去除残留的氮化硅硬掩模。 第一次去除和第二次去除是原位进行的。 第二磷酸溶液的温度低于第一磷酸溶液的温度。

公开(公告)号：US10811258B1

公开(公告)日：2020-10-20

申请号：US16450984

申请日：2019-06-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Hsun Tsai

IPC: H01L21/033 ,  H01L29/78 ,  H01L21/28 ,  H01L29/66 ,  H01L29/06

Abstract: The present invention provides a method for improving the quality of a high-voltage metal oxide semiconductor (HV MOS), the method includes: firstly, a substrate is provided, next, a hard mask layer is formed on the substrate, an oxygen plasma treatment is then performed to the hard mask layer, so as to form an oxide layer on the hard mask layer. Afterwards, a patterned photoresist layer is formed on the oxide layer, and a first cleaning process is performed to a top surface of the oxide layer after the patterned photoresist layer is formed, wherein the first cleaning process comprises rinsing the oxide layer with carbonated water. Next, a first etching process is performed to remove parts of the hard mask layer, and the patterned photoresist layer is then removed. Afterwards, a second etching process is performed, to remove the oxide layer.

公开(公告)号：US20150064905A1

公开(公告)日：2015-03-05

申请号：US14016233

申请日：2013-09-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Hsun Tsai

IPC: H01L29/66

CPC classification number: H01L29/6653 ,  H01L21/02057 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636

Abstract: A semiconductor process including the following steps is provided. A substrate is provided. A nitride layer is formed on the substrate, but exposing a silicon containing area. An oxidation process is performed to oxidize a surface of the silicon containing area to form an oxidized surface. The nitride layer is removed.

Abstract translation: 提供包括以下步骤的半导体工艺。 提供基板。 在衬底上形成氮化物层，但暴露含硅区域。 进行氧化处理以氧化含硅区域的表面以形成氧化表面。 去除氮化物层。

公开(公告)号：US08883033B2

公开(公告)日：2014-11-11

申请号：US13784846

申请日：2013-03-05

Applicant: United Microelectronics Corp.

Inventor： Chi-Sheng Chen ,  Shin-Chi Chen ,  Chih-Yueh Li ,  Ted Ming-Lang Guo ,  Bo-Syuan Lee ,  Tsung-Hsun Tsai ,  Yu-Chin Cheng

IPC: B44C1/22 ,  H01L21/302 ,  H01L21/308

CPC classification number: H01L21/308 ,  H01L21/31111 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659

Abstract: A method for removing silicon nitride material includes following steps. A substrate having at least a gate structure formed thereon is provided, and at least a silicon nitride hard mask is formed on top of the gate structure. A first removal is performed to remove a portion of the silicon nitride hard mask with a first phosphoric acid (H3PO4) solution. A second removal is subsequently performed to remove remnant silicon nitride hard mask with a second phosphoric acid solution. The first removal and the second removal are performed in-situ. A temperature of the second phosphoric acid solution is lower than a temperature of the first phosphoric acid solution.

Abstract translation: 一种除去氮化硅材料的方法包括以下步骤。 提供了至少形成有栅极结构的衬底，并且在栅极结构的顶部上形成至少一个氮化硅硬掩模。 执行第一次去除以用第一磷酸（H 3 PO 4）溶液去除一部分氮化硅硬掩模。 随后进行第二次去除以用第二种磷酸溶液去除残留的氮化硅硬掩模。 第一次去除和第二次去除是原位进行的。 第二磷酸溶液的温度低于第一磷酸溶液的温度。

公开(公告)号：US20230064701A1

公开(公告)日：2023-03-02

申请号：US17485541

申请日：2021-09-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Hsun Tsai

IPC: H01L21/311

Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate having a first region, a second region, and a third region; forming a first gate oxide layer on the first region, the second region, and the third region; and performing an etching process and an infrared treatment process at the same time to completely remove the first gate oxide layer on the second region for exposing the substrate.

公开(公告)号：US20220173244A1

公开(公告)日：2022-06-02

申请号：US17671530

申请日：2022-02-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Hsun Tsai

IPC: H01L29/78 ,  H01L27/088 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/45

Abstract: A new method for fabricating a semiconductor device with high selection phosphoric acid solution and eliminating the step of oxide removal and thus reducing oxide loss to improve yield gain and cost saving.

公开(公告)号：US20170207079A1

公开(公告)日：2017-07-20

申请号：US14996238

申请日：2016-01-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Ming Lee ,  Kuo-Wei Chih ,  Chen-Hsu Hung ,  Chun-Li Lin ,  Chia-Yen Hsu ,  Tsung-Hsun Tsai ,  Po-Lun Cheng

IPC: H01L21/02 ,  B08B3/08 ,  B08B3/02

CPC classification number: H01L21/02057 ,  B08B3/10 ,  H01L21/67051

Abstract: A substrate cleaning method is provided. A substrate is provided, followed by performing a first pre-cleaning process with a first rotation speed and a first duration time. After the first pre-cleaning process, a second pre-cleaning process is performed with a second rotation speed and a second duration time, wherein the second rotation speed is greater than the first rotation speed. After the second pre-cleaning process, a cleaning process is performed by using a chemical agent with a cleaning rotation speed.

公开(公告)号：US20160172184A1

公开(公告)日：2016-06-16

申请号：US14571706

申请日：2014-12-16

Applicant: United Microelectronics Corp.

Inventor： Tsung-Hsun Tsai

IPC: H01L21/02 ,  B08B3/08

CPC classification number: H01L21/02052 ,  H01L21/0209

Abstract: A method for cleaning a wafer is provided. The method comprises the following steps. First, a clean solution is provided with a first amount to a front side and a back side of the wafer. Next, the clean solution is provided with a second amount to the front side and the back side of the wafer, wherein the second amount is less than the first amount. And then, the clean solution and a nano-spray of the clean solution are provided with a third amount in total to the front side of the wafer, wherein the third amount is less than the second amount.

Abstract translation: 提供了一种清洗晶片的方法。 该方法包括以下步骤。 首先，向晶片的前侧和后侧提供第一量的清洁溶液。 接下来，清洁溶液在晶片的前侧和后侧设置有第二量，其中第二量小于第一量。 然后，清洁溶液和清洁溶液的纳米喷雾总共提供到晶片的前侧，其中第三量小于第二量。

公开(公告)号：US11676823B2

公开(公告)日：2023-06-13

申请号：US17485541

申请日：2021-09-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Hsun Tsai

IPC: H01L21/311 ,  H01L21/02 ,  H01L27/12 ,  H01L21/8234 ,  H01L21/8238

CPC classification number: H01L21/31105 ,  H01L21/02107 ,  H01L21/31144 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/1237

Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate having a first region, a second region, and a third region; forming a first gate oxide layer on the first region, the second region, and the third region; and performing an etching process and an infrared treatment process at the same time to completely remove the first gate oxide layer on the second region for exposing the substrate.

公开(公告)号：US20180366316A1

公开(公告)日：2018-12-20

申请号：US15623186

申请日：2017-06-14

Applicant: United Microelectronics Corp.

Inventor： Chun-Jung Wang ,  Chia-Ming Lee ,  Tsung-Hsun Tsai ,  Kuo-Wei Chih ,  Chia-Yen Hsu

IPC: H01L21/02 ,  B08B3/08 ,  B08B3/10

Abstract: A method is provided for cleaning a semiconductor structure. The method includes performing a rinse process of CO2 with water (CO2W) process over the semiconductor structure; and performing a standard clean (SC) process over the semiconductor structure with an overlapping period with the step of performing the rinse process of CO2W.