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    METHOD OF CORRECTING ASSIST FEATURE
    3.
    发明申请
    METHOD OF CORRECTING ASSIST FEATURE 有权
    校正辅助功能的方法

    公开(公告)号：US20140331191A1

    公开(公告)日：2014-11-06

    申请号：US13887377

    申请日：2013-05-06

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Tsung-Yeh Wu ,  Chin-Lung Lin ,  Yao-Jen Fan ,  Wei-Han Chien ,  Chia-Chun Tsai

    IPC: G06F17/50

    CPC classification number: G06F17/5081 ,  G03F1/36

    Abstract: A method of correcting assist features includes the following steps. At first, a first layout pattern is received by a computer system, and the first layout pattern is split into a plurality of first regions. Subsequently, a plurality of assist features are added into the first layout pattern to form a second layout pattern, wherein at least one of the assist features neighboring any one of the edges of the first regions is defined as a selected pattern. Then, the second layout pattern is split into a plurality of second regions. Afterwards, a check step is performed on the second region including the selected pattern, and the second layout pattern is corrected to form a corrected second layout pattern.

    Abstract translation: 一种校正辅助功能的方法包括以下步骤。 首先，由计算机系统接收第一布局图案，并且将第一布局图案分割成多个第一区域。 随后，将多个辅助特征添加到第一布局图案中以形成第二布局图案，其中与第一区域的任何边缘相邻的辅助特征中的至少一个被定义为所选择的图案。 然后，第二布局图案被分割成多个第二区域。 然后，对包括所选择的图案的第二区域执行检查步骤，并校正第二布局图案以形成校正的第二布局图案。

    Layout pattern decomposition method
    4.
    发明授权
    Layout pattern decomposition method 有权
    布局图案分解方法

    公开(公告)号：US09529254B2

    公开(公告)日：2016-12-27

    申请号：US14504401

    申请日：2014-10-01

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chih-Hsien Tang ,  Yao-Jen Fan ,  Chin-Lung Lin

    IPC: G03B27/32 ,  G03F1/00 ,  G06F17/50 ,  G03F1/70 ,  G03F7/20

    CPC classification number: G03F1/70 ,  G03F7/70433 ,  G03F7/70466 ,  G06F17/5081

    Abstract: A layout pattern decomposition method includes following steps. A layout pattern is received. The layout pattern includes a plurality of features, and an edge-to-edge space is respectively defined in between two adjacent features. A sum of a width of the edge-to-edge space and a width of the feature on a left side of the edge-to-edge space and a sum of the width of the edge-to-edge space and a width of the feature on a right side of the edge-to-edge space are respectively calculated. The sums and a predetermined value are respectively compared. When any one of the sums is smaller than the predetermined value, the two features on the two sides of the edge-to-edge space are colored by a first color and alternatively a second color. The features including the first color are assigned to a first pattern and the features including the second color to a second pattern.

    Abstract translation: 布局模式分解方法包括以下步骤。 接收到布局模式。 布局图案包括多个特征，并且在两个相邻特征之间分别限定边缘到边缘空间。 边缘至边缘空间的宽度和边缘至边缘空间的左侧上的特征的宽度的总和以及边缘至边缘空间的宽度和宽度之和 分别计算边缘到边缘空间右侧的特征。 分别对和值和预定值进行比较。 当总和中的任何一个小于预定值时，边缘到边缘空间的两侧上的两个特征被第一颜色和第二颜色着色。 包括第一颜色的特征被分配给第一图案，并且将包括第二颜色的特征分配给第二图案。

    DUMMY PATTERNS AND METHOD FOR GENERATING DUMMY PATTERNS
    5.
    发明申请
    DUMMY PATTERNS AND METHOD FOR GENERATING DUMMY PATTERNS 有权
    DUMMY PATTERNS和生成DUMMY PATTERNS的方法

    公开(公告)号：US20140042636A1

    公开(公告)日：2014-02-13

    申请号：US14064219

    申请日：2013-10-28

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chen-Hua Tsai ,  Jian-Cheng Chen ,  Chin-Yueh Tsai ,  Yao-Jen Fan ,  Heng-Kun Chen ,  Hsiang Yang

    IPC: H01L23/48

    CPC classification number: G03F1/70 ,  G06F17/5072 ,  G06F2217/12 ,  H01L21/0334 ,  H01L23/48 ,  H01L23/481 ,  H01L23/528 ,  H01L2924/0002 ,  Y02P90/265 ,  H01L2924/00

    Abstract: A method for generating dummy patterns includes providing a layout region having a layout pattern with a first density, inserting a plurality of first dummy patterns with a second density corresponding to the first density in the layout pattern, dividing the layout region into a plurality of sub-regions with a third density, adjusting a size of the first dummy pattern according to a difference between the second density and the third density, and outputting the layout pattern and the first dummy patterns on a photomask.

    Abstract translation: 一种用于产生虚拟图案的方法包括提供具有第一密度的布局图案的布局区域，在布局图案中插入具有与第一密度对应的第二密度的多个第一伪图案，将布局区域分成多个子图 具有第三密度的区域，根据第二密度和第三密度之间的差来调整第一伪图案的尺寸，并将布局图案和第一伪图案输出到光掩模上。

    Method for generating layout pattern
    6.
    发明授权
    Method for generating layout pattern 有权

    公开(公告)号：US09672309B2

    公开(公告)日：2017-06-06

    申请号：US14696498

    申请日：2015-04-27

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Harn-Jiunn Wang ,  Teng-Yao Chang ,  Chin-Lung Lin ,  Chih-Hsien Tang ,  Yao-Jen Fan

    IPC: G06F17/50 ,  H01L29/66

    CPC classification number: G06F17/5068 ,  H01L29/66795 ,  H01L29/6681

    Abstract: A method for generating a layout pattern includes following steps. A basic layout pattern including a plurality of first stripe patterns in a first cluster region is provided. Each first stripe pattern extends in a first direction, and the first stripe patterns have equal pitches in a second direction. A plurality of anchor bar patterns are generated. Each anchor bar pattern extends in the first direction, and the anchor bar patterns have equal pitches in the second direction. Edges of at least one of the anchor bar patterns in the second direction are aligned with edges of two adjacent first stripe patterns respectively. At least one of the anchor bar patterns overlaps a first space between two adjacent first stripe patterns. At least one first mandrel pattern is generated at the first space overlapped by the anchor bar pattern, and the first mandrel pattern is outputted to a photomask.

    METHOD FOR GENERATING LAYOUT PATTERN
    7.
    发明申请
    METHOD FOR GENERATING LAYOUT PATTERN 有权
    生成布局图案的方法

    公开(公告)号：US20160275226A1

    公开(公告)日：2016-09-22

    申请号：US14696498

    申请日：2015-04-27

    Applicant: United Microelectronics Corp.

    Inventor： Harn-Jiunn Wang ,  Teng-Yao Chang ,  Chin-Lung Lin ,  Chih-Hsien Tang ,  Yao-Jen Fan

    IPC: G06F17/50

    CPC classification number: G06F17/5068 ,  H01L29/66795 ,  H01L29/6681

    Abstract: A method for generating a layout pattern includes following steps. A basic layout pattern including a plurality of first stripe patterns in a first cluster region is provided. Each first stripe pattern extends in a first direction, and the first stripe patterns have equal pitches in a second direction. A plurality of anchor bar patterns are generated. Each anchor bar pattern extends in the first direction, and the anchor bar patterns have equal pitches in the second direction. Edges of at least one of the anchor bar patterns in the second direction are aligned with edges of two adjacent first stripe patterns respectively. At least one of the anchor bar patterns overlaps a first space between two adjacent first stripe patterns. At least one first mandrel pattern is generated at the first space overlapped by the anchor bar pattern, and the first mandrel pattern is outputted to a photomask.

    Abstract translation: 用于生成布局图案的方法包括以下步骤。 提供了包括第一群集区域中的多个第一条纹图案的基本布局图案。 每个第一条纹图案沿第一方向延伸，并且第一条纹图案在第二方向上具有相等的间距。 产生多个锚杆图案。 每个锚杆图案沿第一方向延伸，并且锚杆图案在第二方向上具有相等的间距。 第二方向上的至少一个锚杆图案的边缘分别与两个相邻的第一条纹图案的边缘对齐。 锚杆图案中的至少一个与两个相邻的第一条纹图案之间的第一空间重叠。 在由锚杆图案重叠的第一空间处产生至少一个第一心轴图案，并且将第一心轴图案输出到光掩模。

    Method of forming a photomask
    10.
    发明授权
    Method of forming a photomask 有权
    形成光掩模的方法

    公开(公告)号：US09268896B1

    公开(公告)日：2016-02-23

    申请号：US14576212

    申请日：2014-12-19

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chih-Hsien Tang ,  Shih-Hung Tsai ,  Chun-Hsien Huang ,  Yao-Jen Fan

    IPC: G06F17/50

    CPC classification number: G03F1/38 ,  G03F1/70 ,  G03F7/70425 ,  H01L21/823431

    Abstract: A method of forming a photomask comprises providing a predetermined fin array having a plurality of fin patterns to a computer readable medium in a computer system. First of all, a plurality of width markers is defined by using the computer system, with each of the width marker parallel to each other and comprising two fin patterns, wherein each of the width markers is spaced from each other by a space. Then, a number of the width markers is checked to be an even. Following this, a plurality of pre-mandrel patterns is defined corresponding to odd numbered ones of the spaces. Then, a plurality of mandrel patterns is defined by sizing up the pre-mandrel patterns. Finally, the mandrel patterns are outputted to form a photomask.

    Abstract translation: 形成光掩模的方法包括向计算机系统中的计算机可读介质提供具有多个鳍图案的预定鳍阵列。 首先，通过使用计算机系统来定义多个宽度标记，其中每个宽度标记彼此平行并且包括两个鳍图案，其中每个宽度标记彼此间隔一个空间。 然后，多个宽度标记被检查为均匀。 此后，对应于空格中的奇数编号的多个预心轴图案被定义。 然后，通过调整预心轴图案的尺寸来定义多个心轴图案。 最后，输出心轴图案以形成光掩模。

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