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    Silicon containing TARC/barrier layer
    1.
    发明授权
    Silicon containing TARC/barrier layer 有权
    含硅的TARC /阻挡层

    公开(公告)号：US07320855B2

    公开(公告)日：2008-01-22

    申请号：US10980365

    申请日：2004-11-03

    申请人： Wu-Song S. Huang ,  Sean D. Burns ,  Pushkara Rao Varanasi

    发明人： Wu-Song S. Huang ,  Sean D. Burns ,  Pushkara Rao Varanasi

    IPC分类号： G03F7/36 ,  G03F7/20 ,  G03F7/09 ,  G03C1/825

    CPC分类号： G03F7/091 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/2041

    摘要： A top anti-reflective coating material (TARC) and barrier layer, and the use thereof in lithography processes, is disclosed. The TARC/barrier layer may be especially useful for immersion lithography using water as the imaging medium. The TARC/barrier layer comprises a polymer which comprises at least one silicon-containing moiety and at least one aqueous base soluble moiety. Suitable polymers include polymers having a silsesquioxane (ladder or network) structure, such as polymers containing monomers having the structure: where R1 comprises an aqueous base soluble moiety, and x is from about 1 to about 1.95, more preferably from about 1 to about 1.75.

    摘要翻译： 公开了一种顶部抗反射涂层材料（TARC）和阻挡层，以及其在光刻工艺中的用途。 TARC /阻挡层可能特别适用于使用水作为成像介质的浸没式光刻技术。 TARC /阻挡层包含含有至少一个含硅部分和至少一个水溶性碱可溶部分的聚合物。 合适的聚合物包括具有倍半硅氧烷（梯形或网络）结构的聚合物，例如含有具有以下结构的单体的聚合物：其中R 1包含碱水溶性部分，x为约1至约1.95， 更优选约1至约1.75。

    Top coat material and use thereof in lithography processes
    2.
    发明授权
    Top coat material and use thereof in lithography processes 失效
    面漆材料及其在光刻工艺中的应用

    公开(公告)号：US07700262B2

    公开(公告)日：2010-04-20

    申请号：US12044004

    申请日：2008-03-07

    申请人： Wenjie Li ,  Margaret C. Lawson ,  Pushkara Rao Varanasi

    发明人： Wenjie Li ,  Margaret C. Lawson ,  Pushkara Rao Varanasi

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10T428/3154

    摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

    摘要翻译： 公开了一种用于涂覆在光致抗蚀剂材料上的顶涂层材料。 面漆材料包括聚合物，其包括至少一种具有以下两种结构之一的氟磺酰胺单体单元：其中：M是可聚合主链部分; Z是选自-C（O）O-，-C（O） - ， - OC（O） - 和-O-C（O）-C（O）-O-的连接部分; R1选自亚烷基，亚芳基，半或全氟亚烷基，以及半或全氟化亚芳基; p和q为0或1; R2选自氢，氟，1至6个碳的烷基和1至6个碳的半或全氟化烷基; n是1至6的整数; 并且R 3选自氢，烷基，芳基，半或全氟烷基和半或全氟芳基。 面漆材料可以用在光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 顶涂层材料优选可溶于含水碱性显影剂。 面漆材料也优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

    PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS
    3.
    发明申请
    PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS 有权
    多层耐蚀系统多光照的组合物和方法

    公开(公告)号：US20090155715A1

    公开(公告)日：2009-06-18

    申请号：US12356187

    申请日：2009-01-20

    申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara Rao Varanasi ,  Sen Liu

    发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara Rao Varanasi ,  Sen Liu

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0045 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

    摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

    摘要翻译： 一种方法和抗蚀剂组合物。 抗蚀剂组合物包括具有内酯部分的重复单元的聚合物，能够产生碱的热碱发生剂和感光酸产生剂。 聚合物具有基本上可溶于第一溶剂的性质，并且在加热聚合物之后变得基本上不溶。 该方法包括形成包含聚合物的光致抗蚀剂膜，能够释放碱的热碱发生器，光敏酸产生剂和溶剂。 该影片被图案化成像。 成像包括将膜暴露于辐射，导致产生酸催化剂。 该膜在水性碱中显影，导致去除碱溶性区域并形成图案层。 图案化层被烘烤高于该温度，导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。

    TOP COAT MATERIAL AND USE THEREOF IN LITHOGRAPHY PROCESSES
    5.
    发明申请
    TOP COAT MATERIAL AND USE THEREOF IN LITHOGRAPHY PROCESSES 失效

    公开(公告)号：US20080166568A1

    公开(公告)日：2008-07-10

    申请号：US12044004

    申请日：2008-03-07

    申请人： Wenjie Li ,  Margaret C. Lawson ,  Pushkara Rao Varanasi

    发明人： Wenjie Li ,  Margaret C. Lawson ,  Pushkara Rao Varanasi

    IPC分类号： B32B27/28

    CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10T428/3154

    摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

    Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use
    6.
    发明授权
    Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use 有权
    具有包含氟磺酰胺基团的聚合物的正性光致抗蚀剂组合物及其使用方法

    公开(公告)号：US07063931B2

    公开(公告)日：2006-06-20

    申请号：US10753989

    申请日：2004-01-08

    申请人： Wenjie Li ,  Pushkara Rao Varanasi

    发明人： Wenjie Li ,  Pushkara Rao Varanasi

    IPC分类号： G03C1/73 ,  G03F7/039

    CPC分类号： G03F7/0397 ,  G03F7/0046 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111

    摘要： A positive photoresist composition comprises a radiations sensitive acid generator, and a polymer that may include a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, and a second repeating unit, which may include a pendant acid-labile moiety. The positive photoresist composition may also comprise at least one of a solvent, a quencher, and a surfactant. A patterned photoresist layer, made of the positive photoresist composition, may be formed on a substrate, the positive photoresist layer may be exposed to a pattern of imaging radiation, a portion of the positive photoresist layer that is exposed to the pattern of imaging radiation may be removed to reveal a correspondingly patterned substrate for subsequent processing in the manufacture of a semiconductor device.

    摘要翻译： 正性光致抗蚀剂组合物包含辐射敏感性酸产生剂和可以包含衍生自包含氟磺酰胺官能团的磺酰胺单体的第一重复单元的聚合物和可包括侧酸不稳定部分的第二重复单元。 正性光致抗蚀剂组合物还可以包含溶剂，猝灭剂和表面活性剂中的至少一种。 由正型光致抗蚀剂组合物制成的图案化光致抗蚀剂层可以形成在衬底上，正性光致抗蚀剂层可以暴露于成像辐射的图案，暴露于成像辐射图案的正性光致抗蚀剂层的一部分可以 被去除以露出相应图案化的衬底，用于在制造半导体器件中进行后续处理。

    Resist compositions containing bulky anhydride additives
    8.
    发明授权
    Resist compositions containing bulky anhydride additives 有权
    含有大量酸酐添加剂的抗蚀剂组合物

    公开(公告)号：US06391521B1

    公开(公告)日：2002-05-21

    申请号：US09639784

    申请日：2000-08-16

    申请人： Hiroshi Ito ,  Pushkara Rao Varanasi

    发明人： Hiroshi Ito ,  Pushkara Rao Varanasi

    IPC分类号： G03F7039

    CPC分类号： G03F7/0395 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111

    摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and are developable to form resist structures of high resolution and high etch resistance are enabled by the use of a combination of (a) an imaging polymer comprising a monomer selected from the group consisting of a cyclic olefin, an acrylate and a methacrylate, (b) a radiation-sensitive acid generator, and (c) a bulky anhydride additive. The imaging polymer is preferably a cyclic olefin polymer.

    摘要翻译： 可以用193nm辐射成像并可显影以形成高分辨率和高耐蚀刻性的抗蚀剂结构的酸催化正性抗蚀剂组合物通过使用（a）包含选自以下的单体的成像聚合物的组合来实现： 的环烯烃，丙烯酸酯和甲基丙烯酸酯，（b）辐射敏感性酸产生剂，和（c）大体积的酸酐添加剂。 成像聚合物优选为环状烯烃聚合物。