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公开(公告)号：US06770419B2
公开(公告)日：2004-08-03
申请号：US10241937
申请日：2002-09-11
申请人： Mahmoud M. Khojasteh , Ranee W. Kwong , Kuang-Jung Chen , Pushkara Rao Varanasi , Robert D. Allen , Phillip Brock , Frances Houle , Ratnam Sooriyakumaran
发明人： Mahmoud M. Khojasteh , Ranee W. Kwong , Kuang-Jung Chen , Pushkara Rao Varanasi , Robert D. Allen , Phillip Brock , Frances Houle , Ratnam Sooriyakumaran
IPC分类号： G03C173
CPC分类号： G03F7/094 , G03F7/0397 , G03F7/0758 , Y10S430/106 , Y10S430/111 , Y10S430/115
摘要： The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.
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公开(公告)号：US06818381B2
公开(公告)日：2004-11-16
申请号：US10026184
申请日：2001-12-21
申请人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
发明人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
IPC分类号： G03F711
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.
摘要翻译： 适用于形成用于多层平版印刷工艺的平坦化底层的组合物的特征在于（A）含有（i）环醚部分，（ii）饱和多环部分和（iii）不需要单独交联剂的组合物的芳族部分的聚合物 ，或（B）含有：（i）饱和多环部分的聚合物，和（ii）需要单独交联剂的组合物的芳族部分。 该组合物提供优异的光学，机械和蚀刻选择性。 组合物在使用波长小于200nm的辐射的光刻工艺中特别有用，以配置下层材料层。
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公开(公告)号：US06927015B2
公开(公告)日：2005-08-09
申请号：US10920762
申请日：2004-08-18
申请人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
发明人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
IPC分类号： C08F30/08 , C08F32/00 , C08F230/08 , C08K5/41 , C08K5/54 , C08L43/04 , C08L45/00 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/075 , G03F7/09 , G11B5/31 , H01L21/027 , G03F7/40 , G03F7/11
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.
摘要翻译： 适用于形成用于多层平版印刷工艺的平坦化底层的组合物的特征在于（A）含有（i）环醚部分，（ii）饱和多环部分和（iii）不需要单独交联剂的组合物的芳族部分的聚合物 ，或（B）含有：（i）饱和多环部分的聚合物，和（ii）需要单独交联剂的组合物的芳族部分。 该组合物提供优异的光学，机械和蚀刻选择性。 组合物在使用波长小于200nm的辐射的光刻工艺中特别有用，以配置下层材料层。
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4.发明授权Photoresist compositions with pendant polar-functionalized aromatic groups and acid-labile branching 失效具有侧链极性官能化芳族基团和酸不稳定支化的光致抗蚀剂组合物公开(公告)号：US06265134B1
公开(公告)日：2001-07-24
申请号：US09699764
申请日：2000-10-30
IPC分类号： G03C173
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/038 , Y10S430/106 , Y10S430/128
摘要： Acid-catalyzed positive photoresist compositions having generally improved performance (especially photoresist compositions having improved contrast (solubility differential), shrinkage and processing kinetics on radiation exposure) are obtained by use of polymers containing pendant polar-functionalized aromatic groups and acid-labile light crosslinking. The photoresist compositions also may contain a photosensitive acid-generating component as well as a solvent and possibly other auxiliary components. The polymers may contain other functional groups or components designed to impart alkaline-solubility, to provide alkaline-solubility protection in the absence of generated acid, etc. The photoresist compositions can be used to create patterned photoresist structures and further to make conductive, semiconductive or insulative structures by photolithography.
摘要翻译： 通过使用含有极性官能化的芳族基团和酸不稳定的轻交联的聚合物，可获得具有通常改进性能的酸催化正性光致抗蚀剂组合物（特别是具有改善的对比度（溶解度差异），收缩和加工动力学的光致抗蚀剂组合物）。 光致抗蚀剂组合物还可以含有感光酸产生组分以及溶剂以及可能的其它辅助组分。 聚合物可以包含设计成赋予碱溶性的其它官能团或组分，以在不存在所产生的酸等的情况下提供碱溶性保护。光致抗蚀剂组合物可用于产生图案化的光致抗蚀剂结构，并进一步制成导电，半导体或 绝缘结构通过光刻。
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5.发明授权Photoresist compositions with pendant polar-functionalized aromatic groups and acid-labile branching 失效具有侧链极性官能化芳族基团和酸不稳定支化的光致抗蚀剂组合物
公开(公告)号：US6140015A
公开(公告)日：2000-10-31
申请号：US209019
申请日：1998-12-10
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/038 , Y10S430/106 , Y10S430/128
摘要： Acid-catalyzed positive photoresist compositions having generally improved performance (especially photoresist compositions having improved contrast (solubility differential), shrinkage and processing kinetics on radiation exposure) are obtained by use of polymers containing pendant polar-functionalized aromatic groups and acid-labile light crosslinking. The photoresist compositions also may contain a photosensitive acid-generating component as well as a solvent and possibly other auxiliary components. The polymers may contain other functional groups or components designed to impart alkaline-solubility, to provide alkaline-solubility protection in the absence of generated acid, etc.The photoresist compositions can be used to create patterned photoresist structures and further to make conductive, semiconductive or insulative structures by photolithography.
摘要翻译： 通过使用含有极性官能化的芳族基团和酸不稳定的轻交联的聚合物，可获得具有通常改进性能的酸催化的正性光致抗蚀剂组合物（特别是具有改善的对比度（溶解度差异），收缩和加工动力学的光致抗蚀剂组合物）。 光致抗蚀剂组合物还可以含有感光酸产生组分以及溶剂以及可能的其它辅助组分。 聚合物可以包含设计成赋予碱溶性的其它官能团或组分，以在不存在产生的酸等的情况下提供碱溶性保护。光致抗蚀剂组合物可用于产生图案化的光致抗蚀剂结构，并进一步制备导电，半导电或 绝缘结构通过光刻。
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6.发明授权
公开(公告)号：US4665006A
公开(公告)日：1987-05-12
申请号：US806597
申请日：1985-12-09
CPC分类号： G03F7/0757 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： A photoresist composition comprised of a radiation scissionable polymeric system having organopolysiloxane segments sensitized by an onium salt is disclosed. Useful organopolysiloxane containing polymers include polysiloxane-polycarbonate block copolymers, and polyorganosiloxane polyaryl esters. The resist films produced from the photoresist compositions exhibit high sensitivity, high thermal stability and resistance to oxygen reactive ion etching which makes them desirable for dry etching processes to enable submicron resolution.
摘要翻译： 公开了一种光致抗蚀剂组合物，其包含具有由鎓盐敏化的有机聚硅氧烷部分的可辐射可分裂聚合物体系。 有用的含有机聚硅氧烷的聚合物包括聚硅氧烷 - 聚碳酸酯嵌段共聚物和聚有机硅氧烷聚芳酯。 由光致抗蚀剂组合物制成的抗蚀剂膜显示出高灵敏度，高热稳定性和耐氧反应离子蚀刻性能，这使得它们对于干蚀刻工艺是可取的，以实现亚微米分辨率。
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公开(公告)号：US5667938A
公开(公告)日：1997-09-16
申请号：US731224
申请日：1996-10-11
申请人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
发明人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
CPC分类号： G03F7/039 , G03F7/0045
摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.
摘要翻译： 质子海绵，小檗碱和十六烷基三甲基氢氧化铵碱化合物用作基于改性聚羟基苯乙烯（PHS）的化学放大光致抗蚀剂的添加剂。 基础添加剂清除光致抗蚀剂中的游离酸，以保持改性PHS聚合物上的酸不稳定部分。 碱添加剂非常适合于工业加工条件，不与光致抗蚀剂组合物中的光酸化合物反应以形成将阻碍光致抗蚀剂性能的副产物，并延长光致抗蚀剂组合物的保质期。 此外，质子海绵和小檗碱碱添加剂具有与改性PHS聚合物不同的吸收光谱，因此可以容易地测定和控制光致抗蚀剂内基础添加剂的量。
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公开(公告)号：US5609989A
公开(公告)日：1997-03-11
申请号：US466568
申请日：1995-06-06
申请人： Nageshwer R. Bantu , William R. Brunsvold , George J. Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic C. Yang
发明人： Nageshwer R. Bantu , William R. Brunsvold , George J. Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic C. Yang
CPC分类号： G03F7/039 , G03F7/0045
摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.
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公开(公告)号：US06268436B1
公开(公告)日：2001-07-31
申请号：US09473225
申请日：1999-12-27
申请人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Quighuang Lin
发明人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Quighuang Lin
IPC分类号： C08L6500
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/107 , Y10S430/111
摘要： The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.
摘要翻译： 本发明涉及一种高性能照射敏感正性抗蚀剂及其制备方法。 一方面，本发明的聚合物树脂组合物包含至少两种可混溶的水溶性可溶性聚合物树脂的共混物，其中所述共混物的所述水溶性基础可溶性聚合物树脂之一部分地被高活化能保护基团保护，并且 所述共混物的其它水溶性可溶性聚合物树脂部分地被低活化能保护基团保护。 一种包含所述聚合物树脂组合物的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。
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10.发明授权Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups 失效使用含有两个酸敏感性保护基团的聚合物的辐射敏感正性抗蚀剂公开(公告)号：US06303263B1
公开(公告)日：2001-10-16
申请号：US09030568
申请日：1998-02-25
申请人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
发明人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
IPC分类号： G03F7039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/11 , Y10S430/111
摘要： The present invention is directed to a high-performance irradiation sensitive resists and to a polymer resin composition useful for making the same. In accordance to the present invention, the polymer resin comprises a dual blocked polymer resins. Specifically, the dual blocked polymer resin comprises at least two different acid labile protecting groups which block some, but not all, of the polar functional groups of the polymer resin. a chemically amplified resist system comprising said dual blocked polymer resin; at least one acid generator; and a solvent is also provided herein.
摘要翻译： 本发明涉及一种高性能的照射敏感抗蚀剂以及可用于制造它的聚合物树脂组合物。 根据本发明，聚合物树脂包含双嵌段聚合物树脂。 具体地，双嵌段聚合物树脂包含至少两种不同的酸不稳定保护基团，其阻挡聚合物树脂的一些但不是全部的极性官能团。 包含所述双嵌段聚合物树脂的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。
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