摘要:
There is provided a plasma arc welding method, characterized in that a portion of a front side workpiece material is heated and melted by a plasma arc to form a molten pool thereat, that the molten pool is held not to fall or drop under a surface tension acting thereto and is brought into contact with a portion of a rear side workpiece material under a pressure which is exerted by the plasma arc and/or a shielding gas, further that the portion of the said rear workpiece material is brought into a molten state by a thermal conduction thereto so that the two workpiece materials may be welded together, and that a swirling flow is imparted to a plasma gas of the plasma arc. There is also provided a plasma welding apparatus for using the above mentioned plasma arc welding method, characterized in that the apparatus comprises: a plasma torch which has a plasma flushing outlet for swirling and flushing a plasma gas of the plasma arc around an electrode therefor.
摘要:
In order to increase the flow rate of coolant liquid supplied to the nozzle (88) of a plasma torch (10) and to extend the life of the plasma torch (10), within the plasma torch (10), an electrode coolant liquid passage (60, 84, 85, 86, and 64) which supplies coolant liquid to an electrode (80), and a nozzle coolant liquid passage (56, 70, 92, 72 and 68) which supplies coolant liquid to the nozzle (88), are provided separately as independent coolant liquid passages which extend in parallel, and which are mutually electrically insulated from one another. Moreover, the flow rate of coolant liquid in the nozzle coolant liquid passage is greater than the flow rate of coolant liquid in the electrode coolant liquid passage.
摘要:
In order to increase the flow rate of coolant liquid supplied to the nozzle (88) of a plasma torch (10) and to extend the life of the plasma torch (10), within the plasma torch (10), an electrode coolant liquid passage (60, 84, 85, 86, and 64 which supplies coolant liquid to an electrode (80), and a nozzle coolant liquid passage (56, 70, 92, 72 and 68) which supplies coolant liquid to the nozzle (88), are provided separately as independent coolant liquid passages which extend in parallel, and which are mutually electrically insulated from one another. Moreover, the flow rate of coolant liquid in the nozzle coolant liquid passage is greater than the flow rate of coolant liquid in the electrode coolant liquid passage.
摘要:
In a plasma arc cutter and a method of controlling the same, a rise compensating circuit (39) and a shift compensating circuit (44) both composed of a charging and discharging capacitor and a resistor are respectively inserted in parallel between an electrode-side connection (21) and a nozzle-side connection (35) and between the electrode-side connection (21) and a workpiece-side connection (34), and a diode (33) is provided on the workpiece-side connection in such a manner as to be inserted between a connecting point (36) of the nozzle-side connection and a connecting point (43) of the shift compensating circuit. A detector (31) for controlling a current is provided and a detector (32) for detecting a shift is provided on the workpiece-side connection. In addition, to effect cutting after boring, at least one plasma torch (14a) for boring and at least one plasma torch (14b) for cutting are provided. Furthermore, the voltage between an electrode (14) and a workpiece (17) or between a nozzle (15) and the workpiece (17) is detected, and the power source is stopped when that voltage exceeds a predetermined value.
摘要:
A semiconductor device includes a substrate having a conductor; a semiconductor chip disposed on the substrate and electrically connected to the conductor; a tubular electrode having one end electrically connected to the conductor; and a sealing resin sealing the substrate, the semiconductor chip and the electrode. The electrode is configured to be extendable and contractible in the stacking direction in which the substrate and the semiconductor chip are stacked in the state before sealing of the sealing resin. The edge of the other end of the electrode is exposed from the sealing resin. The electrode has a hollow space opened at the edge of the other end. Therefore, a semiconductor device reduced in size and a method of manufacturing this semiconductor device can be provided.
摘要:
An information processing apparatus that executes information display processing is disclosed. The apparatus includes: a display unit that executes information display; and a data processing unit that executes a control of the information display of the display unit and data processing based on a user input. The data processing unit displays an image browsing screen, which corresponds to image data stored in a storage unit, on the display unit and executes display of a map at the position, which corresponds to position information included in attribute information of a selected image, on the basis of a user's input of image selection information and map display request.
摘要:
A lattice pallet 13 having a large number of supporters for placing a plate 14 is installed to a table 12 so as to be freely fittable and removable. Bringing in of the plate 14 is performed by the method of raising the lattice pallet 13 with a crane with the plate 14 already having been loaded upon the lattice pallet 13 in a different location, transporting them over the table 12, and lowering them down onto the table 12. Directly after cutting has been completed, the lattice pallet 12 is raised and separated from the table 12 with the manufactured product and the left over material carried upon it and is taken away to a different location, and another lattice pallet 13 with another plate 14 mounted upon it is brought in with the crane upon the table 12, and the task of cutting this other plate 14 is commenced.
摘要:
A semiconductor device including: a semiconductor element; a lead frame connected to the semiconductor element; a metal base plate mounted on the lead frame via a first insulation layer; and a second insulation layer disposed on the opposite side of the metal base plate face on which the first insulation layer is disposed; wherein the first insulation layer is an insulation layer whose heat-dissipation performance is higher than that of the second insulation layer, and the second insulation layer is an insulation layer whose insulation performance is the same as that of the first insulation layer or higher than that of the first insulation layer.
摘要:
There is provided a tandem-type dye-sensitized solar cell having a novel structure whereby optical absorption efficiency is improved and which can be manufactured at low cost.A dye-sensitized solar cell 10 comprises an anode substrate 12, a first dye-carrying porous oxide semiconductor layer 14, an electrolytic solution layer 16a, a porous support layer 18, a second dye-carrying porous oxide semiconductor layer 20, an electrolytic solution layer 16b, and a cathode substrate 22, arranged in order from an optical incidence side. The porous support layer 18 supports an iodine redox catalyst layer 19. Electrons derived by a conductor from a conductor layer 12b are introduced to the cathode substrate 22, thereby configuring, for example, a battery circuit for lighting purposes.